DE69034136D1 - Bipolarer transistor mit isolierter steuerelektrode - Google Patents

Bipolarer transistor mit isolierter steuerelektrode

Info

Publication number
DE69034136D1
DE69034136D1 DE69034136T DE69034136T DE69034136D1 DE 69034136 D1 DE69034136 D1 DE 69034136D1 DE 69034136 T DE69034136 T DE 69034136T DE 69034136 T DE69034136 T DE 69034136T DE 69034136 D1 DE69034136 D1 DE 69034136D1
Authority
DE
Germany
Prior art keywords
bipolar transistor
control electrode
insulated control
insulated
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69034136T
Other languages
English (en)
Other versions
DE69034136T2 (de
Inventor
Norihito Tokura
Naoto Okabe
Naohito Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of DE69034136D1 publication Critical patent/DE69034136D1/de
Application granted granted Critical
Publication of DE69034136T2 publication Critical patent/DE69034136T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69034136T 1989-08-31 1990-08-29 Bipolarer transistor mit isolierter steuerelektrode Expired - Lifetime DE69034136T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22626289 1989-08-31
JP22626289 1989-08-31
PCT/JP1990/001091 WO1991003842A1 (en) 1989-08-31 1990-08-29 Insulated gate bipolar transistor

Publications (2)

Publication Number Publication Date
DE69034136D1 true DE69034136D1 (de) 2004-06-03
DE69034136T2 DE69034136T2 (de) 2005-01-20

Family

ID=16842446

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69034136T Expired - Lifetime DE69034136T2 (de) 1989-08-31 1990-08-29 Bipolarer transistor mit isolierter steuerelektrode

Country Status (4)

Country Link
US (1) US5519245A (de)
EP (1) EP0450082B1 (de)
DE (1) DE69034136T2 (de)
WO (1) WO1991003842A1 (de)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2858404B2 (ja) * 1990-06-08 1999-02-17 株式会社デンソー 絶縁ゲート型バイポーラトランジスタおよびその製造方法
JP2862027B2 (ja) * 1991-03-12 1999-02-24 株式会社デンソー 絶縁ゲート型バイポーラトランジスタ
US5475243A (en) * 1991-07-02 1995-12-12 Fuji Electric Co., Ltd. Semiconductor device including an IGBT and a current-regenerative diode
JP3081739B2 (ja) * 1992-10-20 2000-08-28 三菱電機株式会社 絶縁ゲート型半導体装置及びその製造方法
US5719412A (en) * 1993-04-02 1998-02-17 Nippondenso Co., Ltd Insulated gate bipolar transistor
CN1035294C (zh) * 1993-10-29 1997-06-25 电子科技大学 具有异形掺杂岛的半导体器件耐压层
US5723882A (en) * 1994-03-10 1998-03-03 Nippondenso Co., Ltd. Insulated gate field effect transistor having guard ring regions
JP3355851B2 (ja) * 1995-03-07 2002-12-09 株式会社デンソー 絶縁ゲート型電界効果トランジスタ及びその製造方法
JP3918209B2 (ja) 1996-09-11 2007-05-23 株式会社デンソー 絶縁ゲート型バイポーラトランジスタ及びその製造方法
EP0845813A1 (de) 1996-12-02 1998-06-03 Zetex Plc Bipolartransistor mit isolierter Gateelektrode
US6081009A (en) * 1997-11-10 2000-06-27 Intersil Corporation High voltage mosfet structure
DE19823170A1 (de) * 1998-05-23 1999-11-25 Asea Brown Boveri Bipolartransistor mit isolierter Gateelektrode
EP1060517A1 (de) 1998-02-27 2000-12-20 ABB Semiconductors AG Bipolartransistor mit isolierter gateelektrode
EP1022785B1 (de) * 1999-01-25 2006-04-05 STMicroelectronics S.r.l. Elektronische Halbleiterleistungsanordnung mit integrierter Diode
US6461918B1 (en) 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
US6696726B1 (en) * 2000-08-16 2004-02-24 Fairchild Semiconductor Corporation Vertical MOSFET with ultra-low resistance and low gate charge
US7745289B2 (en) * 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US6818513B2 (en) * 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US6803626B2 (en) * 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US6710403B2 (en) * 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
FI120310B (fi) * 2001-02-13 2009-09-15 Valtion Teknillinen Parannettu menetelmä erittyvien proteiinien tuottamiseksi sienissä
DE10147307A1 (de) * 2001-09-26 2003-04-24 Infineon Technologies Ag IGBT mit integriertem Freilaufelement
US7061066B2 (en) * 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
KR100859701B1 (ko) 2002-02-23 2008-09-23 페어차일드코리아반도체 주식회사 고전압 수평형 디모스 트랜지스터 및 그 제조 방법
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7033891B2 (en) * 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
EP1597772B1 (de) * 2003-02-18 2008-12-24 Nxp B.V. Halbleiterbauelement und verfahren zur herstellung eines solchen bauelements
US7652326B2 (en) 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
KR100994719B1 (ko) * 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US20050199918A1 (en) * 2004-03-15 2005-09-15 Daniel Calafut Optimized trench power MOSFET with integrated schottky diode
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7265415B2 (en) 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
CN102867825B (zh) 2005-04-06 2016-04-06 飞兆半导体公司 沟栅场效应晶体管结构及其形成方法
US7385248B2 (en) 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US7944018B2 (en) * 2006-08-14 2011-05-17 Icemos Technology Ltd. Semiconductor devices with sealed, unlined trenches and methods of forming same
US8580651B2 (en) * 2007-04-23 2013-11-12 Icemos Technology Ltd. Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
US7723172B2 (en) * 2007-04-23 2010-05-25 Icemos Technology Ltd. Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
US20080272429A1 (en) * 2007-05-04 2008-11-06 Icemos Technology Corporation Superjunction devices having narrow surface layout of terminal structures and methods of manufacturing the devices
JP2010541212A (ja) 2007-09-21 2010-12-24 フェアチャイルド・セミコンダクター・コーポレーション 電力デバイスのための超接合構造及び製造方法
US20090085148A1 (en) * 2007-09-28 2009-04-02 Icemos Technology Corporation Multi-directional trenching of a plurality of dies in manufacturing superjunction devices
JP5332175B2 (ja) 2007-10-24 2013-11-06 富士電機株式会社 制御回路を備える半導体装置
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US7846821B2 (en) * 2008-02-13 2010-12-07 Icemos Technology Ltd. Multi-angle rotation for ion implantation of trenches in superjunction devices
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8946814B2 (en) 2012-04-05 2015-02-03 Icemos Technology Ltd. Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates
GB2586599A (en) * 2019-08-27 2021-03-03 Mqsemi Ag Electrically shorted PN junctions and functional semiconductor designs for the same

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4003072A (en) * 1972-04-20 1977-01-11 Sony Corporation Semiconductor device with high voltage breakdown resistance
JPS5936430B2 (ja) * 1980-01-17 1984-09-04 株式会社東芝 半導体装置
JPS5940576A (ja) * 1982-08-30 1984-03-06 Junichi Nishizawa フオトサイリスタ
GB2150753B (en) * 1983-11-30 1987-04-01 Toshiba Kk Semiconductor device
JPS6115370A (ja) * 1984-06-30 1986-01-23 Toshiba Corp 半導体装置
JPS60142559A (ja) * 1983-12-29 1985-07-27 Fujitsu Ltd プログラマブル・リ−ド・オンリ・メモリ
JPH0779159B2 (ja) * 1984-03-22 1995-08-23 潤一 西澤 光トリガ・光クエンチ可能なサイリスタ装置
JPS61158177A (ja) * 1984-12-28 1986-07-17 Toshiba Corp 半導体装置
JPS61185971A (ja) * 1985-02-14 1986-08-19 Toshiba Corp 伝導度変調型半導体装置
GB2171555A (en) * 1985-02-20 1986-08-28 Philips Electronic Associated Bipolar semiconductor device with implanted recombination region
JPS61208268A (ja) * 1985-03-13 1986-09-16 Toshiba Corp 伝導度変調型半導体装置
JPS61216363A (ja) * 1985-03-22 1986-09-26 Toshiba Corp 伝導度変調型半導体装置
JPH0783115B2 (ja) * 1986-03-20 1995-09-06 松下電子工業株式会社 絶縁ゲ−ト型電界効果トランジスタ
JPS62174971A (ja) * 1986-06-26 1987-07-31 Semiconductor Res Found 静電誘導サイリスタ
JPS6318675A (ja) * 1986-07-11 1988-01-26 Toshiba Corp 半導体装置
JPH067592B2 (ja) * 1986-07-14 1994-01-26 株式会社日立製作所 ゲ−トタ−ンオフサイリスタ
JPS6381861A (ja) * 1986-09-25 1988-04-12 Mitsubishi Electric Corp 伝導度変調形ｍｏｓｆｅｔ
JPS6384066A (ja) * 1986-09-26 1988-04-14 Semiconductor Res Found 集積化光トリガ・光クエンチ静電誘導サイリスタ及びその製造方法
JP2577330B2 (ja) * 1986-12-11 1997-01-29 新技術事業団 両面ゲ−ト静電誘導サイリスタの製造方法
JPS63150970A (ja) * 1986-12-15 1988-06-23 Fuji Electric Co Ltd 導電変調型絶縁ゲ−トトランジスタ
JPS63186475A (ja) * 1987-01-29 1988-08-02 Nissan Motor Co Ltd 電導度変調形ｍｏｓｆｅｔ
US5223919A (en) * 1987-02-25 1993-06-29 U. S. Philips Corp. Photosensitive device suitable for high voltage operation
US4821095A (en) * 1987-03-12 1989-04-11 General Electric Company Insulated gate semiconductor device with extra short grid and method of fabrication
US4857983A (en) * 1987-05-19 1989-08-15 General Electric Company Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication
JPS649769A (en) * 1987-07-03 1989-01-13 Amada Co Ltd Perforation skipping device of printing paper for line printer
JPH01109769A (ja) * 1987-10-22 1989-04-26 Mitsubishi Electric Corp 半導体装置
JPH01129462A (ja) * 1987-11-16 1989-05-22 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
JPH07120799B2 (ja) * 1988-04-01 1995-12-20 株式会社日立製作所 半導体装置
GB8901342D0 (en) * 1989-01-21 1989-03-15 Lucas Ind Plc Semiconductor device

Also Published As

Publication number Publication date
US5519245A (en) 1996-05-21
DE69034136T2 (de) 2005-01-20
EP0450082B1 (de) 2004-04-28
WO1991003842A1 (en) 1991-03-21
EP0450082A4 (en) 1992-05-06
EP0450082A1 (de) 1991-10-09

Similar Documents

Publication Publication Date Title
DE69034136D1 (de) Bipolarer transistor mit isolierter steuerelektrode
DE69021177D1 (de) Halbleiteranordnung mit isolierter Gateelektrode.
DE3855922D1 (de) An-Steuertechnik für Thyristor mit isolierter Steuerelektrode
DE69029180D1 (de) Transistor mit Spannungsbegrenzungsanordnung
DE3884993D1 (de) Lichtbogenvorrichtung mit justierbarer Kathode.
DE69428894D1 (de) Bipolartransistor mit isolierter Steuerelektrode
DE69025990D1 (de) Bipolarer Transistor mit isolierter Steuerelektrode und Verfahren zu dessen Herstellung
DE3686971D1 (de) Lateraler transistor mit isoliertem gate mit latch-up-festigkeit.
DE3262032D1 (en) Bipolar transistor controlled by field effect having an insulated gate electrode
DE3856545D1 (de) Halbleiterbauelement mit isoliertem Gatter
DE3583119D1 (de) Bipolartransistor mit heterouebergang.
DE69533010D1 (de) Feldeffekttransistor mit isolierter Steuerelektrode
DE3678638D1 (de) Heizungskontrolleinrichtung.
DE3884292D1 (de) Bipolarer Transistor mit Heteroübergang.
NO863502D0 (no) Isolert roer.
DE3671672D1 (de) Anzeigevorrichtung mit ansteuerung.
DE68926776D1 (de) Lateraler, bipolarer Transistor mit isolierter Steuerelektrode
DE3650606D1 (de) Schnellschaltender, lateraler Feldeffekttransistor mit isolierter Steuerelektrode
DE69222380D1 (de) Lateraler, bipolarer Transistor mit isolierter Steuerelektrode und entsprechende Mehrfachanordnung
DE3689782D1 (de) Anordnung mit isoliertem Gate.
DE3869529D1 (de) Indirekt wirkendes setzgeraet mit leistungssteuerung.
DE68904343D1 (de) Bipolarer transistor mit isolierter steuerelektrode.
DE3782748D1 (de) Feldeffekttransistor mit isoliertem gate.
DE69210328D1 (de) Lateraler, bipolarer Halbleitertransistor mit isolierter Steuerelektrode
DE3851412D1 (de) Thyristor mit einstellbarer Kippspannung.

Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition