DE69428894D1 - Bipolartransistor mit isolierter Steuerelektrode - Google Patents

Bipolartransistor mit isolierter Steuerelektrode

Info

Publication number
DE69428894D1
DE69428894D1 DE69428894T DE69428894T DE69428894D1 DE 69428894 D1 DE69428894 D1 DE 69428894D1 DE 69428894 T DE69428894 T DE 69428894T DE 69428894 T DE69428894 T DE 69428894T DE 69428894 D1 DE69428894 D1 DE 69428894D1
Authority
DE
Germany
Prior art keywords
bipolar transistor
control electrode
isolated control
isolated
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69428894T
Other languages
English (en)
Other versions
DE69428894T2 (de
Inventor
Giuseppe Ferla
Ferruccio Frisina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69428894D1 publication Critical patent/DE69428894D1/de
Publication of DE69428894T2 publication Critical patent/DE69428894T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE69428894T 1994-08-02 1994-08-02 Bipolartransistor mit isolierter Steuerelektrode Expired - Fee Related DE69428894T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94830393A EP0697739B1 (de) 1994-08-02 1994-08-02 Bipolartransistor mit isolierter Steuerelektrode

Publications (2)

Publication Number Publication Date
DE69428894D1 true DE69428894D1 (de) 2001-12-06
DE69428894T2 DE69428894T2 (de) 2002-04-25

Family

ID=8218502

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69428894T Expired - Fee Related DE69428894T2 (de) 1994-08-02 1994-08-02 Bipolartransistor mit isolierter Steuerelektrode

Country Status (4)

Country Link
US (1) US5631483A (de)
EP (1) EP0697739B1 (de)
JP (1) JP3469967B2 (de)
DE (1) DE69428894T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
EP0768714B1 (de) * 1995-10-09 2003-09-17 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Herstellungsverfahren für Leistungsanordnung mit Schutzring
DE69533134T2 (de) * 1995-10-30 2005-07-07 Stmicroelectronics S.R.L., Agrate Brianza Leistungsbauteil hoher Dichte in MOS-Technologie
EP0772242B1 (de) * 1995-10-30 2006-04-05 STMicroelectronics S.r.l. Leistungsbauteil in MOS-Technologie mit einer einzelnen kritischen Grösse
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
DE69518653T2 (de) * 1995-12-28 2001-04-19 St Microelectronics Srl MOS-Technologie-Leistungsanordnung in integrierter Struktur
US5977569A (en) * 1996-09-24 1999-11-02 Allen-Bradley Company, Llc Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability
DE19811297B4 (de) * 1997-03-17 2009-03-19 Fuji Electric Co., Ltd., Kawasaki MOS-Halbleitervorrichtung mit hoher Durchbruchspannung
EP0961325B1 (de) 1998-05-26 2008-05-07 STMicroelectronics S.r.l. MOS-Technologie-Leistungsanordnung mit hoher Integrationsdichte
CN100420031C (zh) * 2000-08-08 2008-09-17 美高森美公司 具有非对称沟道结构的功率mos器件
US20030106545A1 (en) * 2001-12-06 2003-06-12 Verini Nicholas A. Non-lethal handgun
US20070151551A1 (en) * 2004-05-13 2007-07-05 Verini Nicholas A Non-lethal hand pistol
US7723803B2 (en) * 2005-03-07 2010-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Bipolar device compatible with CMOS process technology
US20070181927A1 (en) * 2006-02-03 2007-08-09 Yedinak Joseph A Charge balance insulated gate bipolar transistor
US20070189067A1 (en) * 2006-02-15 2007-08-16 Francis Goodwin Dynamic memory
US8835987B2 (en) * 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
JP2010056134A (ja) * 2008-08-26 2010-03-11 Mitsubishi Electric Corp 半導体装置
US8415764B2 (en) * 2009-06-02 2013-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. High-voltage BJT formed using CMOS HV processes
US8450672B2 (en) * 2009-06-30 2013-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensors formed of logic bipolar transistors
US8541787B2 (en) * 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
CN102034823B (zh) * 2009-09-30 2013-01-02 意法半导体研发(深圳)有限公司 用于spu和stog良好性能的功率晶体管的布局和焊盘布图规划
KR101248658B1 (ko) * 2011-04-12 2013-03-28 주식회사 케이이씨 절연형 게이트 바이폴라 트랜지스터
JP2013235890A (ja) * 2012-05-07 2013-11-21 Denso Corp 半導体装置
GB2575810A (en) * 2018-07-23 2020-01-29 Ween Semiconductors Tech Co Ltd Power semiconductor device
GB2575809B (en) * 2018-07-23 2023-01-04 Ween Semiconductors Co Ltd Power Semiconductor device

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
US4001860A (en) * 1973-11-12 1977-01-04 Signetics Corporation Double diffused metal oxide semiconductor structure with isolated source and drain and method
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
JPS5846863B2 (ja) * 1977-08-25 1983-10-19 松下電器産業株式会社 半導体集積回路装置
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
US4344081A (en) * 1980-04-14 1982-08-10 Supertex, Inc. Combined DMOS and a vertical bipolar transistor device and fabrication method therefor
DE3224642A1 (de) * 1982-07-01 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Igfet mit injektorzone
JPS6143474A (ja) * 1984-08-08 1986-03-03 Toshiba Corp 半導体装置
US4620211A (en) * 1984-08-13 1986-10-28 General Electric Company Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
US4694313A (en) * 1985-02-19 1987-09-15 Harris Corporation Conductivity modulated semiconductor structure
JPS6318675A (ja) * 1986-07-11 1988-01-26 Toshiba Corp 半導体装置
JPS6442177A (en) * 1987-08-10 1989-02-14 Hitachi Ltd Insulated gate transistor
JPH0766968B2 (ja) * 1987-08-24 1995-07-19 株式会社日立製作所 半導体装置及びその製造方法
JPH04291767A (ja) * 1991-03-20 1992-10-15 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
DE4216810C2 (de) * 1991-05-31 1999-09-16 Fuji Electric Co Ltd Steuerschaltung für einen Leitfähigkeitsänderungs-MISFET
JP3163820B2 (ja) * 1992-07-28 2001-05-08 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
JPH0864811A (ja) 1996-03-08
JP3469967B2 (ja) 2003-11-25
US5631483A (en) 1997-05-20
EP0697739A1 (de) 1996-02-21
EP0697739B1 (de) 2001-10-31
DE69428894T2 (de) 2002-04-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee