DE69210328T2 - Lateraler, bipolarer Halbleitertransistor mit isolierter Steuerelektrode - Google Patents
Lateraler, bipolarer Halbleitertransistor mit isolierter SteuerelektrodeInfo
- Publication number
- DE69210328T2 DE69210328T2 DE69210328T DE69210328T DE69210328T2 DE 69210328 T2 DE69210328 T2 DE 69210328T2 DE 69210328 T DE69210328 T DE 69210328T DE 69210328 T DE69210328 T DE 69210328T DE 69210328 T2 DE69210328 T2 DE 69210328T2
- Authority
- DE
- Germany
- Prior art keywords
- lateral
- control electrode
- semiconductor transistor
- bipolar semiconductor
- isolated control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/741,288 US5227653A (en) | 1991-08-07 | 1991-08-07 | Lateral trench-gate bipolar transistors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69210328D1 DE69210328D1 (de) | 1996-06-05 |
DE69210328T2 true DE69210328T2 (de) | 1996-11-07 |
Family
ID=24980123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69210328T Expired - Fee Related DE69210328T2 (de) | 1991-08-07 | 1992-07-28 | Lateraler, bipolarer Halbleitertransistor mit isolierter Steuerelektrode |
Country Status (5)
Country | Link |
---|---|
US (1) | US5227653A (de) |
EP (1) | EP0526939B1 (de) |
JP (1) | JP2633145B2 (de) |
KR (1) | KR100278526B1 (de) |
DE (1) | DE69210328T2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2272572B (en) * | 1992-11-09 | 1996-07-10 | Fuji Electric Co Ltd | Insulated-gate bipolar transistor and process of producing the same |
EP1179853A1 (de) * | 1994-09-16 | 2002-02-13 | Kabushiki Kaisha Toshiba | Halbleiteranordnung mit hoher Durchbruchsspannung |
DE69624305T2 (de) * | 1995-03-23 | 2003-06-26 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem ligbt element |
US5776813A (en) * | 1997-10-06 | 1998-07-07 | Industrial Technology Research Institute | Process to manufacture a vertical gate-enhanced bipolar transistor |
DE19750413A1 (de) * | 1997-11-14 | 1999-05-20 | Asea Brown Boveri | Bipolartransistor mit isolierter Steuerelektrode (IGBT) |
DE19800647C1 (de) | 1998-01-09 | 1999-05-27 | Siemens Ag | SOI-Hochspannungsschalter |
JP3641547B2 (ja) * | 1998-03-25 | 2005-04-20 | 株式会社豊田中央研究所 | 横型mos素子を含む半導体装置 |
WO1999056323A1 (fr) * | 1998-04-27 | 1999-11-04 | Mitsubishi Denki Kabushiki Kaisha | Dispositif semi-conducteur et son procede de fabrication |
KR100370129B1 (ko) | 2000-08-01 | 2003-01-30 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조방법 |
JP4290378B2 (ja) * | 2002-03-28 | 2009-07-01 | Necエレクトロニクス株式会社 | 横型パワーmosトランジスタおよびその製造方法 |
US7759731B2 (en) * | 2006-08-28 | 2010-07-20 | Advanced Analogic Technologies, Inc. | Lateral trench MOSFET with direct trench polysilicon contact and method of forming the same |
CN101840935B (zh) * | 2010-05-17 | 2012-02-29 | 电子科技大学 | Soi横向mosfet器件 |
CN105990408A (zh) * | 2015-02-02 | 2016-10-05 | 无锡华润上华半导体有限公司 | 横向绝缘栅双极型晶体管 |
CN110459606B (zh) * | 2019-08-29 | 2023-03-24 | 电子科技大学 | 一种具有自偏置pmos的横向沟槽型igbt及其制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
US4546367A (en) * | 1982-06-21 | 1985-10-08 | Eaton Corporation | Lateral bidirectional notch FET with extended gate insulator |
EP0273030A3 (de) * | 1982-12-13 | 1988-09-21 | General Electric Company | Laterale Gleichrichter mit isoliertem Gate |
US4963951A (en) * | 1985-11-29 | 1990-10-16 | General Electric Company | Lateral insulated gate bipolar transistors with improved latch-up immunity |
US4767722A (en) * | 1986-03-24 | 1988-08-30 | Siliconix Incorporated | Method for making planar vertical channel DMOS structures |
DE3855922T2 (de) * | 1987-02-26 | 1998-01-02 | Toshiba Kawasaki Kk | An-Steuertechnik für Thyristor mit isolierter Steuerelektrode |
DE3820677A1 (de) * | 1987-07-13 | 1989-01-26 | Bbc Brown Boveri & Cie | Feldeffektgesteuertes, bipolares leistungshalbleiter-bauelement und verfahren zu dessen herstellung |
US4914058A (en) * | 1987-12-29 | 1990-04-03 | Siliconix Incorporated | Grooved DMOS process with varying gate dielectric thickness |
JP2788269B2 (ja) * | 1988-02-08 | 1998-08-20 | 株式会社東芝 | 半導体装置およびその製造方法 |
US5049968A (en) * | 1988-02-08 | 1991-09-17 | Kabushiki Kaisha Toshiba | Dielectrically isolated substrate and semiconductor device using the same |
US5016067A (en) * | 1988-04-11 | 1991-05-14 | Texas Instruments Incorporated | Vertical MOS transistor |
JPH0783118B2 (ja) * | 1988-06-08 | 1995-09-06 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US4951102A (en) * | 1988-08-24 | 1990-08-21 | Harris Corporation | Trench gate VCMOS |
DE68929359T2 (de) * | 1988-09-22 | 2002-08-22 | Koninkl Philips Electronics Nv | Laterale bipolare Transistoranordnungen mit isolierter Steuerelektrode mit geteilter Anode |
DE68926384T2 (de) * | 1988-11-29 | 1996-10-10 | Toshiba Kawasaki Kk | Lateraler Leitfähigkeitsmodulations-MOSFET |
JPH0716009B2 (ja) * | 1988-12-02 | 1995-02-22 | 株式会社日立製作所 | 横型絶縁ゲートバイポーラトランジスタ |
JP2536137B2 (ja) * | 1989-03-28 | 1996-09-18 | 富士電機株式会社 | 伝導度変調型mosfetを備えた半導体装置 |
-
1991
- 1991-08-07 US US07/741,288 patent/US5227653A/en not_active Expired - Fee Related
-
1992
- 1992-07-28 EP EP92202313A patent/EP0526939B1/de not_active Expired - Lifetime
- 1992-07-28 DE DE69210328T patent/DE69210328T2/de not_active Expired - Fee Related
- 1992-08-04 JP JP4208104A patent/JP2633145B2/ja not_active Expired - Fee Related
- 1992-08-07 KR KR1019920014158A patent/KR100278526B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69210328D1 (de) | 1996-06-05 |
JP2633145B2 (ja) | 1997-07-23 |
US5227653A (en) | 1993-07-13 |
JPH05206159A (ja) | 1993-08-13 |
KR930005238A (ko) | 1993-03-23 |
EP0526939B1 (de) | 1996-05-01 |
EP0526939A1 (de) | 1993-02-10 |
KR100278526B1 (ko) | 2001-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |