DE3583208D1 - Halbleiteranordnung mit hoher durchbruchspannung. - Google Patents
Halbleiteranordnung mit hoher durchbruchspannung.Info
- Publication number
- DE3583208D1 DE3583208D1 DE8585306728T DE3583208T DE3583208D1 DE 3583208 D1 DE3583208 D1 DE 3583208D1 DE 8585306728 T DE8585306728 T DE 8585306728T DE 3583208 T DE3583208 T DE 3583208T DE 3583208 D1 DE3583208 D1 DE 3583208D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor arrangement
- breakthrough voltage
- high breakthrough
- voltage
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59200106A JPS6178162A (ja) | 1984-09-25 | 1984-09-25 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3583208D1 true DE3583208D1 (de) | 1991-07-18 |
Family
ID=16418929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585306728T Expired - Lifetime DE3583208D1 (de) | 1984-09-25 | 1985-09-23 | Halbleiteranordnung mit hoher durchbruchspannung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4746967A (de) |
EP (1) | EP0180315B1 (de) |
JP (1) | JPS6178162A (de) |
KR (1) | KR890004960B1 (de) |
DE (1) | DE3583208D1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62298172A (ja) * | 1986-06-17 | 1987-12-25 | Sanyo Electric Co Ltd | 半導体装置 |
JPS62298171A (ja) * | 1986-06-17 | 1987-12-25 | Sanyo Electric Co Ltd | 半導体装置 |
EP0311816A1 (de) * | 1987-10-15 | 1989-04-19 | BBC Brown Boveri AG | Halbleiterbauelement und Verfahren zu dessen Herstellung |
DE10202479A1 (de) * | 2002-01-23 | 2003-08-07 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit einer Struktur zur Verringerung eines Minoritätsladungsträgerstromes |
US7195965B2 (en) * | 2002-10-25 | 2007-03-27 | Texas Instruments Incorporated | Premature breakdown in submicron device geometries |
US8466492B1 (en) * | 2012-01-31 | 2013-06-18 | Infineon Technologies Austria Ag | Semiconductor device with edge termination structure |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3717515A (en) * | 1969-11-10 | 1973-02-20 | Ibm | Process for fabricating a pedestal transistor |
FR2420209A1 (fr) * | 1978-03-14 | 1979-10-12 | Thomson Csf | Structure de circuit integre fonctionnant a haute tension |
JPS5951743B2 (ja) * | 1978-11-08 | 1984-12-15 | 株式会社日立製作所 | 半導体集積装置 |
US4452645A (en) * | 1979-11-13 | 1984-06-05 | International Business Machines Corporation | Method of making emitter regions by implantation through a non-monocrystalline layer |
JPS57139965A (en) * | 1981-02-24 | 1982-08-30 | Toshiba Corp | Manufacture of semiconductor device |
DE3110000C2 (de) * | 1981-03-14 | 1986-04-30 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleiterbauelement hoher Sperrfähigkeit |
JPS57160159A (en) * | 1981-03-28 | 1982-10-02 | Toshiba Corp | High breakdown voltage planar type semiconductor device |
-
1984
- 1984-09-25 JP JP59200106A patent/JPS6178162A/ja active Pending
-
1985
- 1985-09-13 KR KR1019850006723A patent/KR890004960B1/ko not_active IP Right Cessation
- 1985-09-23 EP EP85306728A patent/EP0180315B1/de not_active Expired - Lifetime
- 1985-09-23 DE DE8585306728T patent/DE3583208D1/de not_active Expired - Lifetime
-
1987
- 1987-05-11 US US07/047,598 patent/US4746967A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0180315A2 (de) | 1986-05-07 |
JPS6178162A (ja) | 1986-04-21 |
EP0180315A3 (en) | 1987-10-14 |
KR890004960B1 (ko) | 1989-12-02 |
KR860002878A (ko) | 1986-04-30 |
US4746967A (en) | 1988-05-24 |
EP0180315B1 (de) | 1991-06-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |