KR860002878A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR860002878A
KR860002878A KR1019850006723A KR850006723A KR860002878A KR 860002878 A KR860002878 A KR 860002878A KR 1019850006723 A KR1019850006723 A KR 1019850006723A KR 850006723 A KR850006723 A KR 850006723A KR 860002878 A KR860002878 A KR 860002878A
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KR
South Korea
Prior art keywords
impurity region
high concentration
concentration impurity
semiconductor device
region
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KR1019850006723A
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English (en)
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KR890004960B1 (ko
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다까오( 외 1) 에모또
Original Assignee
사바 쇼오이찌
가부시기가이샤 도오시바
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Publication of KR860002878A publication Critical patent/KR860002878A/ko
Application granted granted Critical
Publication of KR890004960B1 publication Critical patent/KR890004960B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 첫번째실시예에 따른 단면도.
제2도는 본 발명의 두번재실시예에 따른 단면도,
제3도는 본 발명중 고농도로 도우핑된 불순물영역을 나타내는 단면도.

Claims (9)

  1. 제1도전형인 반도체기판의 규정영역속에 형성시킨 제2도전형인 제1불순물영역(12)과 제1불순물영역의 반대측인 상기 반도체기판(10)의 뒷쪽영역에 규정된 양만큼 돌출되도록 형성시킨 제1전도형의 제1고농도불순물영역(16)이 구비된 것으로, 상기 제1고농도불순물영역(16)의 돌출폭(T) 이 t1＜Tt1+2Wo(t1은 제1불순물영역 (12)의 폭. T는 제1고농도불순물영역의(16)의 돌출폭 Wo는 상기 제1불순물영역(12)과 상기 제1고농도 불순물영역(16) 사이의 깊이방향 간격)를 만족시키도록된 반도체장치.
  2. 제1항에 있어서, 반도체기판의 뒷쪽에 제1고농도불순물영역(27)보다 얕으면서 제1고농도불순물영역에 인접되게 형성시킨 제1전도형의 제2고농도불순물영역 (28)이 포함된 반도체장치.
  3. 제1항에 있어서, 제1고농도불순물영역(16)의 중심이 제1불순물영역(12)의 중심과 동일하게 위치하도록 형성시킨 반도체장치.
  4. 제1항에 있어서, 제1불순물영역(22)속에 형성시킨 제1전도형의 제2불순물영역(23)을 포함하도록된 반도체장치.
  5. 제4항에 있어서, 제1고농도불순물영역(25)의 돌출폭(T)이 t2＜Tt1+2Wo(여기서 t1은 제1불순물영역(22)의 폭 t2는 제2불순물 영역(23)의 폭ㆍT 제1고농도 불순물영역(25)의 폭·Wo는 상기 제1불순물영역(22)과 상기 제1고농도불순물영역(25) 사이의 깊이방향간격)를 만족하도록 된 반도체장치.
  6. 제5항에 있어서, 반도체기판(21)의 뒷쪽에 제1고농도 불순물영역보다 얕으면서 제1고농도불순물영역(27)에 인접되게 형성시킨 제1전도형의 제2고농도불순물영역(28)이 포함되어 있는 반도체장치.
  7. 제5항에 있어서, 제1고농도불순물영역(27)의 중심이 제1고농도불순물영역 (22)의 중심과 동일하게 위치하도록 형성시킨 반도체장치.
  8. 제1항에 있어서, 제2전도형의 보호환영역(14)이 제1분순물영역을 둘러싸도록 형성시킨 반도체장치.
  9. 제1항에 있어서, 제1불순물영역을 둘러싸기 위하여 규정된 간격으로 형성시킨 저항계플레이트를 포함하도록된 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850006723A 1984-09-13 1985-09-13 반도체 장치 KR890004960B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59200106A JPS6178162A (ja) 1984-09-25 1984-09-25 半導体装置
JP59-200106 1984-09-25

Publications (2)

Publication Number Publication Date
KR860002878A true KR860002878A (ko) 1986-04-30
KR890004960B1 KR890004960B1 (ko) 1989-12-02

Family

ID=16418929

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850006723A KR890004960B1 (ko) 1984-09-13 1985-09-13 반도체 장치

Country Status (5)

Country Link
US (1) US4746967A (ko)
EP (1) EP0180315B1 (ko)
JP (1) JPS6178162A (ko)
KR (1) KR890004960B1 (ko)
DE (1) DE3583208D1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62298172A (ja) * 1986-06-17 1987-12-25 Sanyo Electric Co Ltd 半導体装置
JPS62298171A (ja) * 1986-06-17 1987-12-25 Sanyo Electric Co Ltd 半導体装置
EP0311816A1 (de) * 1987-10-15 1989-04-19 BBC Brown Boveri AG Halbleiterbauelement und Verfahren zu dessen Herstellung
DE10202479A1 (de) * 2002-01-23 2003-08-07 Infineon Technologies Ag Integrierte Schaltungsanordnung mit einer Struktur zur Verringerung eines Minoritätsladungsträgerstromes
US7195965B2 (en) * 2002-10-25 2007-03-27 Texas Instruments Incorporated Premature breakdown in submicron device geometries
US8466492B1 (en) * 2012-01-31 2013-06-18 Infineon Technologies Austria Ag Semiconductor device with edge termination structure

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3717515A (en) * 1969-11-10 1973-02-20 Ibm Process for fabricating a pedestal transistor
FR2420209A1 (fr) * 1978-03-14 1979-10-12 Thomson Csf Structure de circuit integre fonctionnant a haute tension
JPS5951743B2 (ja) * 1978-11-08 1984-12-15 株式会社日立製作所 半導体集積装置
US4452645A (en) * 1979-11-13 1984-06-05 International Business Machines Corporation Method of making emitter regions by implantation through a non-monocrystalline layer
JPS57139965A (en) * 1981-02-24 1982-08-30 Toshiba Corp Manufacture of semiconductor device
DE3110000C2 (de) * 1981-03-14 1986-04-30 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbauelement hoher Sperrfähigkeit
JPS57160159A (en) * 1981-03-28 1982-10-02 Toshiba Corp High breakdown voltage planar type semiconductor device

Also Published As

Publication number Publication date
EP0180315A2 (en) 1986-05-07
JPS6178162A (ja) 1986-04-21
EP0180315A3 (en) 1987-10-14
KR890004960B1 (ko) 1989-12-02
US4746967A (en) 1988-05-24
EP0180315B1 (en) 1991-06-12
DE3583208D1 (de) 1991-07-18

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