KR920015577A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR920015577A
KR920015577A KR1019910024101A KR910024101A KR920015577A KR 920015577 A KR920015577 A KR 920015577A KR 1019910024101 A KR1019910024101 A KR 1019910024101A KR 910024101 A KR910024101 A KR 910024101A KR 920015577 A KR920015577 A KR 920015577A
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semiconductor
semiconductor layer
layer
conductive
carrier concentration
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KR1019910024101A
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KR960011939B1 (ko
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순이치 히라키
요시로 바바
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아오이 죠이치
가부시키가이샤 도시바
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 제1실시예를 나타낸 측단면도, 제2도는 제1도의 트렌치깊이와 온저항의 관계를 설명하기 위해 나타낸 도면, 제3도는 제1도의 기판농도와 온저항의 관계를 설명하기 위해 나타낸 도면, 제4도는 제1도의 기판농도와 내압의 관계를 설명하기 위해 나타낸 도면, 제5도는 제1도의 매입층의 농도와 전계강도의 관계를 설명하기 위해 나타낸 도면, 제6도는 본 발명에 따른 제2실시예를 나타낸 것으로, 본 발명을 IGBT에 적용한 경우를 나타낸 측단면도, 제8도는 본 발명에 따른 제4실시예를 나타낸 것으로, 본 발명을 IPD에 적용한 경우를 나타낸 측단면도이다.

Claims (8)

  1. 제1도전형의 반도체기판(11;52)과, 이 반도체기판(11;52)상에 설치된 동일 도전형의 제1반도체층(12), 이 제1반도체층(12)층에 설치된 적어도 1개의 트렌치부 (16), 이 트렌치부(16)의 내부에 설치된 게이트전극(20) 및, 상기 트렌치부(16)의 밑부분과 상기 반도체기판(11;52)과의 상호간에 설치된 매립층(17)을 구비하여 구성된 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 매립층(17)의 불순물 캐리어농도가 상기 반도체기판 (11;52)중의 불순물 캐리어농도 보다 낮고, 상기 제1반도체층(12)중의 불순물 캐리어농도보다 높은 것을 특징으로 하는 반도체장치.
  3. 제1항에 있어서, 상기 제1반도체층(12)내부에는 상기 트렌치부(16)의 주위에 위치해서 채널영역을 구성하는 제2도전층의 제2반도체층(13)과, 이 제2반도체층 (13)상에 형성되어 소오스영역을 구성하는 제1도전형의 제3반도체층(14)이 설치되어 있는 것을 특징으로 하는 반도체장치.
  4. 제1항에 있어서, 상기 제1반도체층(12)내부에는 절연영역(54)이 설치되고, 이 절연영역(54)을 개재해서 소신호회로영역(55)이 설치되어 있는 것을 특징으로 하는 반도체장치.
  5. 제1도전형의 반도체기판(31;41)과, 이 반도체기판(31;41)상에 설치된 제2도전형의 제1반도체층(12), 이 제1반도체층(12)에 설치된 적어도 1개의 트렌치부 (16), 이 트렌치부(16)의 내부에 설치된 게이트전극(20) 및, 상기 트렌치부(16)의 밑부분과 상기 반도체기판(31;41)과의 상호간에 설치된 매립층(17)을 구비하여 구성된 것을 특징으로 하는 반도체장치.
  6. 제5항에 있어서, 상기 반도체기판(31;41)과 제1반도체층(12)간에는 이 제1반도체층(12)과 동일 도전형의 제2반도체층(32)이 설치되고, 상기 매립층(17)은 상기 제2반도체층(32)에 접하여 설치되어 있는 것을 특징으로 하는 반도체장치.
  7. 제5항 또는 제6항중의 어느 한 항에 있어서, 상기 매립층(17)의 불순물 캐리어농도가 상기 제1반도체층(12)중의 불순물 캐리어농도보다 낮고, 상기 제2반도체층(32)중의 불순물 캐리어농도보다 높은 것을 특징으로 하는 반도체장치.
  8. 제5항에 있어서, 상기 제1반도체층(12)의 내부에는 상기트렌치부(16)의 주위에 위치해서 채널영역을 형성하는 제1도전형의 제3반도체층(13)과, 이 제3반도체층 (13)상에 형성된 제2도전형의 제4반도체층(14)이 설치되어 있는 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910024101A 1991-01-09 1991-12-24 반도체장치 KR960011939B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-001083 1991-01-09
JP3001083A JP2635828B2 (ja) 1991-01-09 1991-01-09 半導体装置

Publications (2)

Publication Number Publication Date
KR920015577A true KR920015577A (ko) 1992-08-27
KR960011939B1 KR960011939B1 (ko) 1996-09-04

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KR1019910024101A KR960011939B1 (ko) 1991-01-09 1991-12-24 반도체장치

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EP (1) EP0494597B1 (ko)
JP (1) JP2635828B2 (ko)
KR (1) KR960011939B1 (ko)
DE (1) DE69215389T2 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100521994B1 (ko) * 1996-12-27 2005-12-21 페어차일드코리아반도체 주식회사 트렌치게이트형모스트랜지스터및그제조방법
KR100518506B1 (ko) * 1998-02-06 2006-04-21 페어차일드코리아반도체 주식회사 트랜치 게이트형 전력용 모스 소자 및 그 제조방법
KR100850689B1 (ko) * 2000-06-16 2008-08-07 제네럴 세미컨덕터, 인코포레이티드 파워 ｍｏｓｆｅｔ 및 이러한 파워 ｍｏｓｆｅｔ을 제조하는 방법

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US5349224A (en) * 1993-06-30 1994-09-20 Purdue Research Foundation Integrable MOS and IGBT devices having trench gate structure
US5323040A (en) * 1993-09-27 1994-06-21 North Carolina State University At Raleigh Silicon carbide field effect device
JPH07235672A (ja) 1994-02-21 1995-09-05 Mitsubishi Electric Corp 絶縁ゲート型半導体装置およびその製造方法
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
US5637898A (en) * 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
US6426260B1 (en) * 1997-12-02 2002-07-30 Magepower Semiconductor Corp. Switching speed improvement in DMO by implanting lightly doped region under gate
US6011280A (en) * 1998-06-26 2000-01-04 Delco Electronics Corporation IGBT power device with improved resistance to reverse power pulses
GB0005650D0 (en) * 2000-03-10 2000-05-03 Koninkl Philips Electronics Nv Field-effect semiconductor devices
US6657254B2 (en) * 2001-11-21 2003-12-02 General Semiconductor, Inc. Trench MOSFET device with improved on-resistance
EP1671374B1 (en) 2003-10-08 2018-05-09 Toyota Jidosha Kabushiki Kaisha Insulated gate type semiconductor device and manufacturing method thereof
US8093621B2 (en) 2008-12-23 2012-01-10 Power Integrations, Inc. VTS insulated gate bipolar transistor
US20100155831A1 (en) * 2008-12-20 2010-06-24 Power Integrations, Inc. Deep trench insulated gate bipolar transistor
US7871882B2 (en) 2008-12-20 2011-01-18 Power Integrations, Inc. Method of fabricating a deep trench insulated gate bipolar transistor
JP6284314B2 (ja) 2012-08-21 2018-02-28 ローム株式会社 半導体装置
JP6190206B2 (ja) * 2012-08-21 2017-08-30 ローム株式会社 半導体装置
CN111986994A (zh) * 2020-08-17 2020-11-24 江苏东海半导体科技有限公司 Igbt制作方法及igbt半导体结构
CN113745339B (zh) * 2021-09-07 2022-08-19 无锡新洁能股份有限公司 高可靠性功率半导体器件及其制作方法

Family Cites Families (6)

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JPS5658267A (en) * 1979-10-17 1981-05-21 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field-effect transistor
JPS59193064A (ja) * 1983-04-15 1984-11-01 Matsushita Electric Works Ltd 高耐圧縦型トランジスタ装置
JPS61148815A (ja) * 1984-12-24 1986-07-07 Hitachi Ltd 半導体集積回路装置及びその製造方法
JPS61171162A (ja) * 1985-01-25 1986-08-01 Matsushita Electric Works Ltd バイポーラｍｉｓ・ｆｅｔの製造方法
JPH01111348A (ja) * 1987-10-24 1989-04-28 Nec Corp 単結晶シリコン島領域を有する半導体装置及びその製造方法
US4893160A (en) * 1987-11-13 1990-01-09 Siliconix Incorporated Method for increasing the performance of trenched devices and the resulting structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100521994B1 (ko) * 1996-12-27 2005-12-21 페어차일드코리아반도체 주식회사 트렌치게이트형모스트랜지스터및그제조방법
KR100518506B1 (ko) * 1998-02-06 2006-04-21 페어차일드코리아반도체 주식회사 트랜치 게이트형 전력용 모스 소자 및 그 제조방법
KR100850689B1 (ko) * 2000-06-16 2008-08-07 제네럴 세미컨덕터, 인코포레이티드 파워 ｍｏｓｆｅｔ 및 이러한 파워 ｍｏｓｆｅｔ을 제조하는 방법

Also Published As

Publication number Publication date
KR960011939B1 (ko) 1996-09-04
DE69215389T2 (de) 1997-04-24
JPH04251983A (ja) 1992-09-08
DE69215389D1 (de) 1997-01-09
JP2635828B2 (ja) 1997-07-30
EP0494597A1 (en) 1992-07-15
EP0494597B1 (en) 1996-11-27

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