DE3786363D1 - Halbleiteranordnungen mit hoher beweglichkeit. - Google Patents
Halbleiteranordnungen mit hoher beweglichkeit.Info
- Publication number
- DE3786363D1 DE3786363D1 DE8787200641T DE3786363T DE3786363D1 DE 3786363 D1 DE3786363 D1 DE 3786363D1 DE 8787200641 T DE8787200641 T DE 8787200641T DE 3786363 T DE3786363 T DE 3786363T DE 3786363 D1 DE3786363 D1 DE 3786363D1
- Authority
- DE
- Germany
- Prior art keywords
- high mobility
- semiconductor arrangements
- arrangements
- semiconductor
- mobility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
- H01L29/7785—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with more than one donor layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08609337A GB2189345A (en) | 1986-04-16 | 1986-04-16 | High mobility p channel semi conductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3786363D1 true DE3786363D1 (de) | 1993-08-05 |
DE3786363T2 DE3786363T2 (de) | 1994-01-13 |
Family
ID=10596328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE87200641T Expired - Fee Related DE3786363T2 (de) | 1986-04-16 | 1987-04-06 | Halbleiteranordnungen mit hoher Beweglichkeit. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4862228A (de) |
EP (1) | EP0241988B1 (de) |
JP (1) | JP2537852B2 (de) |
DE (1) | DE3786363T2 (de) |
GB (1) | GB2189345A (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4899201A (en) * | 1987-08-14 | 1990-02-06 | Regents Of The University Of Minnesota | Electronic and optoelectric devices utilizing light hole properties |
JP2681819B2 (ja) * | 1987-08-14 | 1997-11-26 | リージェンツ オブ ザ ユニバーシティ オブ ミネソタ | 軽い正孔の特性を利用した電子および光電素子 |
US5091759A (en) * | 1989-10-30 | 1992-02-25 | Texas Instruments Incorporated | Heterostructure field effect transistor |
US4952792A (en) * | 1989-10-13 | 1990-08-28 | At&T Bell Laboratories | Devices employing internally strained asymmetric quantum wells |
US4999485A (en) * | 1989-10-18 | 1991-03-12 | At&T Bell Laboratories | Nonlinerar optical device structure with compound semiconductor having graded chemical composition |
US5161235A (en) * | 1990-02-20 | 1992-11-03 | University Of Virginia Alumni Patents Foundation | Field-effect compound semiconductive transistor with GaAs gate to increase barrier height and reduce turn-on threshold |
JP2557546B2 (ja) * | 1990-03-30 | 1996-11-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5172197A (en) * | 1990-04-11 | 1992-12-15 | Hughes Aircraft Company | Hemt structure with passivated donor layer |
US5055891A (en) * | 1990-05-31 | 1991-10-08 | Hewlett-Packard Company | Heterostructure transistor using real-space electron transfer |
US5111255A (en) * | 1990-06-05 | 1992-05-05 | At&T Bell Laboratories | Buried channel heterojunction field effect transistor |
US5060031A (en) * | 1990-09-18 | 1991-10-22 | Motorola, Inc | Complementary heterojunction field effect transistor with an anisotype N+ ga-channel devices |
GB2248967A (en) * | 1990-10-19 | 1992-04-22 | Philips Electronic Associated | A high mobility semiconductor device |
US5841552A (en) * | 1991-04-19 | 1998-11-24 | Canon Kabushiki Kaisha | Image processed apparatus for processing images having different resolutions |
EP0623244A1 (de) * | 1992-01-22 | 1994-11-09 | Picogiga S.A. | P-kanal quanten-topf-feldeffekttransistor und integrierte schaltung mit komplementaeren transistoren |
FR2694132B1 (fr) * | 1992-07-21 | 1994-10-14 | Picogiga Sa | Transistor à effet de champ à canal p à puits quantique, et circuit intégré à transistors complémentaires. |
FR2686455A1 (fr) * | 1992-01-22 | 1993-07-23 | Picogiga Sa | Transistor a effet de champ a canal p a heterojonction, et circuit integre a transistors complementaires. |
US5488237A (en) * | 1992-02-14 | 1996-01-30 | Sumitomo Electric Industries, Ltd. | Semiconductor device with delta-doped layer in channel region |
WO2001086299A2 (de) * | 2000-05-05 | 2001-11-15 | Bayer Aktiengesellschaft | Dotierte nanoteilchen als biolabel |
JP2003197906A (ja) * | 2001-12-28 | 2003-07-11 | Fujitsu Ltd | 半導体装置および相補型半導体装置 |
JP3661061B2 (ja) * | 2002-10-09 | 2005-06-15 | 松下電器産業株式会社 | プラズマ振動スイッチング素子 |
GB0326993D0 (en) * | 2003-11-20 | 2003-12-24 | Qinetiq Ltd | Strained semiconductor devices |
DE102004036971B4 (de) * | 2004-07-30 | 2009-07-30 | Advanced Micro Devices, Inc., Sunnyvale | Technik zur Bewertung lokaler elektrischer Eigenschaften in Halbleiterbauelementen |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
US8815617B2 (en) * | 2004-10-01 | 2014-08-26 | Finisar Corporation | Passivation of VCSEL sidewalls |
US7826506B2 (en) * | 2004-10-01 | 2010-11-02 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
CA2581614A1 (en) * | 2004-10-01 | 2006-04-13 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
US7902571B2 (en) * | 2005-08-04 | 2011-03-08 | Hitachi Cable, Ltd. | III-V group compound semiconductor device including a buffer layer having III-V group compound semiconductor crystal |
US8541773B2 (en) | 2011-05-02 | 2013-09-24 | Intel Corporation | Vertical tunneling negative differential resistance devices |
CN105900243A (zh) * | 2013-09-27 | 2016-08-24 | 英特尔公司 | 在包覆的iii-v族沟道材料中实现高迁移率的方法 |
US9406566B1 (en) * | 2015-12-04 | 2016-08-02 | International Business Machines Corporation | Integration of III-V compound materials on silicon |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4163237A (en) * | 1978-04-24 | 1979-07-31 | Bell Telephone Laboratories, Incorporated | High mobility multilayered heterojunction devices employing modulated doping |
JPS58147167A (ja) * | 1982-02-26 | 1983-09-01 | Fujitsu Ltd | 高移動度相補型半導体装置 |
US4538165A (en) * | 1982-03-08 | 1985-08-27 | International Business Machines Corporation | FET With heterojunction induced channel |
JPS6012775A (ja) * | 1983-07-02 | 1985-01-23 | Agency Of Ind Science & Technol | 電界効果トランジスタ |
JPH0654784B2 (ja) * | 1984-06-11 | 1994-07-20 | 沖電気工業株式会社 | 半導体装置 |
JPS60263471A (ja) * | 1984-06-11 | 1985-12-26 | Oki Electric Ind Co Ltd | 半導体装置 |
JPH07120790B2 (ja) * | 1984-06-18 | 1995-12-20 | 株式会社日立製作所 | 半導体装置 |
US4665415A (en) * | 1985-04-24 | 1987-05-12 | International Business Machines Corporation | Semiconductor device with hole conduction via strained lattice |
-
1986
- 1986-04-16 GB GB08609337A patent/GB2189345A/en not_active Withdrawn
-
1987
- 1987-04-06 EP EP87200641A patent/EP0241988B1/de not_active Expired - Lifetime
- 1987-04-06 DE DE87200641T patent/DE3786363T2/de not_active Expired - Fee Related
- 1987-04-13 JP JP62088964A patent/JP2537852B2/ja not_active Expired - Fee Related
- 1987-04-15 US US07/038,806 patent/US4862228A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS62245682A (ja) | 1987-10-26 |
JP2537852B2 (ja) | 1996-09-25 |
DE3786363T2 (de) | 1994-01-13 |
US4862228A (en) | 1989-08-29 |
EP0241988A2 (de) | 1987-10-21 |
EP0241988A3 (en) | 1988-03-02 |
GB8609337D0 (en) | 1986-05-21 |
EP0241988B1 (de) | 1993-06-30 |
GB2189345A (en) | 1987-10-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8339 | Ceased/non-payment of the annual fee |