DE3762016D1 - Halbleiteranordnung mit hoher durchbruchsspannung. - Google Patents

Halbleiteranordnung mit hoher durchbruchsspannung.

Info

Publication number
DE3762016D1
DE3762016D1 DE8787107487T DE3762016T DE3762016D1 DE 3762016 D1 DE3762016 D1 DE 3762016D1 DE 8787107487 T DE8787107487 T DE 8787107487T DE 3762016 T DE3762016 T DE 3762016T DE 3762016 D1 DE3762016 D1 DE 3762016D1
Authority
DE
Germany
Prior art keywords
semiconductor arrangement
breakthrough voltage
high breakthrough
voltage
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787107487T
Other languages
English (en)
Inventor
Takehide Fujitsu Limit Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3762016D1 publication Critical patent/DE3762016D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
DE8787107487T 1986-05-23 1987-05-22 Halbleiteranordnung mit hoher durchbruchsspannung. Expired - Fee Related DE3762016D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61118506A JPS62274767A (ja) 1986-05-23 1986-05-23 高耐圧半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
DE3762016D1 true DE3762016D1 (de) 1990-04-26

Family

ID=14738339

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787107487T Expired - Fee Related DE3762016D1 (de) 1986-05-23 1987-05-22 Halbleiteranordnung mit hoher durchbruchsspannung.

Country Status (5)

Country Link
US (1) US4933730A (de)
EP (1) EP0248292B1 (de)
JP (1) JPS62274767A (de)
KR (1) KR900004728B1 (de)
DE (1) DE3762016D1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2602210B2 (ja) * 1986-06-06 1997-04-23 株式会社日立製作所 半導体集積回路装置の製造方法
US5191401A (en) * 1989-03-10 1993-03-02 Kabushiki Kaisha Toshiba MOS transistor with high breakdown voltage
JPH02237159A (ja) * 1989-03-10 1990-09-19 Toshiba Corp 半導体装置
US5162888A (en) * 1989-05-12 1992-11-10 Western Digital Corporation High DC breakdown voltage field effect transistor and integrated circuit
US5210438A (en) * 1989-05-18 1993-05-11 Fujitsu Limited Semiconductor resistance element and process for fabricating same
USH986H (en) * 1989-06-09 1991-11-05 International Business Machines Corporation Field effect-transistor with asymmetrical structure
US5162883A (en) * 1989-07-04 1992-11-10 Fuji Electric Co., Ltd. Increased voltage MOS semiconductor device
US5536957A (en) * 1990-01-16 1996-07-16 Mitsubishi Denki Kabushiki Kaisha MOS field effect transistor having source/drain regions surrounded by impurity wells
KR940008222B1 (ko) * 1990-03-05 1994-09-08 후지쓰 가부시끼가이샤 고전압 mos 트랜지스터 및 그 제조방법과 고전압 mos 트랜지스터를 갖는 반도체 장치 및 그 제조방법
US5234853A (en) * 1990-03-05 1993-08-10 Fujitsu Limited Method of producing a high voltage MOS transistor
US5132753A (en) * 1990-03-23 1992-07-21 Siliconix Incorporated Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs
JP2545762B2 (ja) * 1990-04-13 1996-10-23 日本電装株式会社 高耐圧ｍｉｓトランジスタおよびこのトランジスタを有する相補型トランジスタの製造方法
JPH0475351A (ja) * 1990-07-17 1992-03-10 Mitsubishi Electric Corp 化合物半導体装置の製造方法
JPH05218070A (ja) * 1992-01-30 1993-08-27 Sanyo Electric Co Ltd Ｍｏｓ電界効果半導体装置
JPH06216380A (ja) * 1992-10-07 1994-08-05 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2503900B2 (ja) * 1993-07-30 1996-06-05 日本電気株式会社 半導体装置及びそれを用いたモ―タドライバ回路
US5426325A (en) * 1993-08-04 1995-06-20 Siliconix Incorporated Metal crossover in high voltage IC with graduated doping control
EP0739542B1 (de) * 1994-01-12 2002-05-02 Atmel Corporation Eingangs-/ausgangs-transistor mit optimierten schutz gegen esd
JPH07321306A (ja) * 1994-03-31 1995-12-08 Seiko Instr Inc 半導体装置およびその製造方法
US6093949A (en) * 1998-06-26 2000-07-25 Elmos Semiconductor Ag MOS transistor
US6111291A (en) * 1998-06-26 2000-08-29 Elmos Semiconductor Ag MOS transistor with high voltage sustaining capability
US6506648B1 (en) * 1998-09-02 2003-01-14 Cree Microwave, Inc. Method of fabricating a high power RF field effect transistor with reduced hot electron injection and resulting structure
KR20150008316A (ko) * 2013-07-12 2015-01-22 삼성디스플레이 주식회사 반도체 장치, 이의 제조 방법 및 시스템.

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1226080A (de) * 1967-11-28 1971-03-24
JPS5093083A (de) * 1973-12-17 1975-07-24
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device
JPS53125779A (en) * 1977-04-08 1978-11-02 Matsushita Electric Ind Co Ltd Mos type semiconductor device
JPS53137678A (en) * 1977-05-07 1978-12-01 Matsushita Electric Ind Co Ltd Manufacture for mos type semiconductor device
US4119996A (en) * 1977-07-20 1978-10-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Complementary DMOS-VMOS integrated circuit structure
JPS54137985A (en) * 1978-04-18 1979-10-26 Mitsubishi Electric Corp Field effect semiconductor device of insulation gate type
US4173818A (en) * 1978-05-30 1979-11-13 International Business Machines Corporation Method for fabricating transistor structures having very short effective channels
US4290077A (en) * 1979-05-30 1981-09-15 Xerox Corporation High voltage MOSFET with inter-device isolation structure
JPS5666781A (en) * 1979-11-05 1981-06-05 Seiko Epson Corp Portable watch attached with illuminator
JPS5693371A (en) * 1979-12-26 1981-07-28 Mitsubishi Electric Corp Semiconductor device
US4280855A (en) * 1980-01-23 1981-07-28 Ibm Corporation Method of making a dual DMOS device by ion implantation and diffusion
JPS5833870A (ja) * 1981-08-24 1983-02-28 Hitachi Ltd 半導体装置
JPS60117674A (ja) * 1983-11-29 1985-06-25 Fujitsu Ltd 高耐圧半導体装置

Also Published As

Publication number Publication date
EP0248292B1 (de) 1990-03-21
EP0248292A3 (en) 1988-01-07
KR870011697A (ko) 1987-12-26
JPS62274767A (ja) 1987-11-28
US4933730A (en) 1990-06-12
JPH0525393B2 (de) 1993-04-12
EP0248292A2 (de) 1987-12-09
KR900004728B1 (ko) 1990-07-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee