DE3677165D1 - Integrierte halbleiterschaltungsanordnung. - Google Patents

Integrierte halbleiterschaltungsanordnung.

Info

Publication number
DE3677165D1
DE3677165D1 DE8686309703T DE3677165T DE3677165D1 DE 3677165 D1 DE3677165 D1 DE 3677165D1 DE 8686309703 T DE8686309703 T DE 8686309703T DE 3677165 T DE3677165 T DE 3677165T DE 3677165 D1 DE3677165 D1 DE 3677165D1
Authority
DE
Germany
Prior art keywords
circuit arrangement
semiconductor circuit
integrated semiconductor
integrated
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686309703T
Other languages
English (en)
Inventor
Masaya Iio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE3677165D1 publication Critical patent/DE3677165D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE8686309703T 1985-12-12 1986-12-12 Integrierte halbleiterschaltungsanordnung. Expired - Fee Related DE3677165D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60280092A JPH0666402B2 (ja) 1985-12-12 1985-12-12 半導体集積回路装置の入力保護回路

Publications (1)

Publication Number Publication Date
DE3677165D1 true DE3677165D1 (de) 1991-02-28

Family

ID=17620203

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686309703T Expired - Fee Related DE3677165D1 (de) 1985-12-12 1986-12-12 Integrierte halbleiterschaltungsanordnung.

Country Status (5)

Country Link
US (1) US4712152A (de)
EP (1) EP0226469B1 (de)
JP (1) JPH0666402B2 (de)
KR (1) KR900004298B1 (de)
DE (1) DE3677165D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021840A (en) * 1987-08-18 1991-06-04 Texas Instruments Incorporated Schottky or PN diode with composite sidewall
FR2623018B1 (fr) * 1987-11-06 1990-02-09 Thomson Semiconducteurs Circuit integre protege contre les decharges electrostatiques avec seuil de protection variable
USRE37477E1 (en) * 1987-11-06 2001-12-18 Sgs-Thomson Microelectronics, Inc. Integrated circuit protected against electrostatic discharges, with variable protection threshold
JPH01267985A (ja) * 1988-04-20 1989-10-25 Fuji Photo Film Co Ltd 発熱抵抗体の駆動回路
US4875130A (en) * 1988-07-06 1989-10-17 National Semiconductor Corporation ESD low resistance input structure
US5235489A (en) * 1991-06-28 1993-08-10 Sgs-Thomson Microelectronics, Inc. Integrated solution to high voltage load dump conditions
US5591661A (en) * 1992-04-07 1997-01-07 Shiota; Philip Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures
US5272097A (en) * 1992-04-07 1993-12-21 Philip Shiota Method for fabricating diodes for electrostatic discharge protection and voltage references
US5301081A (en) * 1992-07-16 1994-04-05 Pacific Monolithics Input protection circuit
US5276582A (en) * 1992-08-12 1994-01-04 National Semiconductor Corporation ESD protection using npn bipolar transistor
FR2729008B1 (fr) * 1994-12-30 1997-03-21 Sgs Thomson Microelectronics Circuit integre de puissance
KR0182972B1 (ko) * 1996-07-18 1999-03-20 김광호 반도체 메모리 장치
US6388857B1 (en) * 1999-07-23 2002-05-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor circuit device with improved surge resistance
JP2001297989A (ja) * 2000-04-14 2001-10-26 Mitsubishi Electric Corp 半導体基板及びその製造方法並びに半導体装置及びその製造方法
JP5002899B2 (ja) * 2005-03-14 2012-08-15 富士電機株式会社 サージ電圧保護ダイオード
DE102005027368A1 (de) * 2005-06-14 2006-12-28 Atmel Germany Gmbh Halbleiterschutzstruktur für eine elektrostatische Entladung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
IT1094080B (it) * 1978-04-20 1985-07-26 Ates Componenti Elettron Dispositivo a semiconduttore protetto contro le sovratensioni
US4405933A (en) * 1981-02-04 1983-09-20 Rca Corporation Protective integrated circuit device utilizing back-to-back zener diodes
US4527213A (en) * 1981-11-27 1985-07-02 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit device with circuits for protecting an input section against an external surge
JPS5895856A (ja) * 1981-12-02 1983-06-07 Matsushita Electronics Corp 半導体装置
JPS5992557A (ja) * 1982-11-18 1984-05-28 Nec Corp 入力保護回路付半導体集積回路
US4498227A (en) * 1983-07-05 1985-02-12 Fairchild Camera & Instrument Corporation Wafer fabrication by implanting through protective layer
JPS60117653A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体集積回路装置
US5991854A (en) * 1996-07-01 1999-11-23 Sun Microsystems, Inc. Circuit and method for address translation, using update and flush control circuits

Also Published As

Publication number Publication date
EP0226469B1 (de) 1991-01-23
JPS62137861A (ja) 1987-06-20
KR870006670A (ko) 1987-07-13
KR900004298B1 (ko) 1990-06-20
EP0226469A1 (de) 1987-06-24
US4712152A (en) 1987-12-08
JPH0666402B2 (ja) 1994-08-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee