IT1094080B - Dispositivo a semiconduttore protetto contro le sovratensioni - Google Patents

Dispositivo a semiconduttore protetto contro le sovratensioni

Info

Publication number
IT1094080B
IT1094080B IT22499/78A IT2249978A IT1094080B IT 1094080 B IT1094080 B IT 1094080B IT 22499/78 A IT22499/78 A IT 22499/78A IT 2249978 A IT2249978 A IT 2249978A IT 1094080 B IT1094080 B IT 1094080B
Authority
IT
Italy
Prior art keywords
device against
protected device
against overvoltage
semiconductor
semiconductor protected
Prior art date
Application number
IT22499/78A
Other languages
English (en)
Other versions
IT7822499A0 (it
Inventor
Giovanni Bordicchia
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT22499/78A priority Critical patent/IT1094080B/it
Publication of IT7822499A0 publication Critical patent/IT7822499A0/it
Priority to DE19792915918 priority patent/DE2915918A1/de
Priority to SE7903441A priority patent/SE7903441L/
Priority to FR7909997A priority patent/FR2423867A1/fr
Priority to JP4809779A priority patent/JPS54158877A/ja
Priority to GB7913769A priority patent/GB2019645A/en
Application granted granted Critical
Publication of IT1094080B publication Critical patent/IT1094080B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
IT22499/78A 1978-04-20 1978-04-20 Dispositivo a semiconduttore protetto contro le sovratensioni IT1094080B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT22499/78A IT1094080B (it) 1978-04-20 1978-04-20 Dispositivo a semiconduttore protetto contro le sovratensioni
DE19792915918 DE2915918A1 (de) 1978-04-20 1979-04-19 Halbleiteranordnung mit ueberspannungsschutz
SE7903441A SE7903441L (sv) 1978-04-20 1979-04-19 Overspenningsskydd vid halvledaranordningar
FR7909997A FR2423867A1 (fr) 1978-04-20 1979-04-20 Dispositif a semi-conducteur monobloc protege contre les surtensions
JP4809779A JPS54158877A (en) 1978-04-20 1979-04-20 Semiconductor device
GB7913769A GB2019645A (en) 1978-04-20 1979-04-20 Semiconductor device protected against overvoltages

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22499/78A IT1094080B (it) 1978-04-20 1978-04-20 Dispositivo a semiconduttore protetto contro le sovratensioni

Publications (2)

Publication Number Publication Date
IT7822499A0 IT7822499A0 (it) 1978-04-20
IT1094080B true IT1094080B (it) 1985-07-26

Family

ID=11197088

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22499/78A IT1094080B (it) 1978-04-20 1978-04-20 Dispositivo a semiconduttore protetto contro le sovratensioni

Country Status (6)

Country Link
JP (1) JPS54158877A (it)
DE (1) DE2915918A1 (it)
FR (1) FR2423867A1 (it)
GB (1) GB2019645A (it)
IT (1) IT1094080B (it)
SE (1) SE7903441L (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100467A (en) * 1980-01-14 1981-08-12 Nec Corp Protecting device against electrostatic destruction
JPS59181679A (ja) * 1983-03-31 1984-10-16 Nippon Denso Co Ltd 半導体装置
IT1221867B (it) * 1983-05-16 1990-07-12 Ates Componenti Elettron Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable
JPS6159773A (ja) * 1984-08-30 1986-03-27 Fujitsu Ltd 半導体集積回路装置
US4689651A (en) * 1985-07-29 1987-08-25 Motorola, Inc. Low voltage clamp
JPH0666402B2 (ja) * 1985-12-12 1994-08-24 三菱電機株式会社 半導体集積回路装置の入力保護回路
EP0443055A1 (de) * 1990-02-20 1991-08-28 Siemens Aktiengesellschaft Eingangsschutzstruktur für integrierte Schaltungen
EP0477429A1 (de) * 1990-09-28 1992-04-01 Siemens Aktiengesellschaft Eingangsschutzstruktur für integrierte Schaltungen

Also Published As

Publication number Publication date
SE7903441L (sv) 1979-10-21
FR2423867A1 (fr) 1979-11-16
DE2915918A1 (de) 1979-10-31
JPS54158877A (en) 1979-12-15
IT7822499A0 (it) 1978-04-20
GB2019645A (en) 1979-10-31

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