ES497606A0 - Un dispositivo laser semiconductor - Google Patents

Un dispositivo laser semiconductor

Info

Publication number
ES497606A0
ES497606A0 ES497606A ES497606A ES497606A0 ES 497606 A0 ES497606 A0 ES 497606A0 ES 497606 A ES497606 A ES 497606A ES 497606 A ES497606 A ES 497606A ES 497606 A0 ES497606 A0 ES 497606A0
Authority
ES
Spain
Prior art keywords
laser device
semiconductive laser
semiconductive
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES497606A
Other languages
English (en)
Other versions
ES8201774A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES8201774A1 publication Critical patent/ES8201774A1/es
Publication of ES497606A0 publication Critical patent/ES497606A0/es
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0425Electrodes, e.g. characterised by the structure
    • H01S5/04254Electrodes, e.g. characterised by the structure characterised by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223Buried stripe structure
    • H01S5/2231Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0425Electrodes, e.g. characterised by the structure
    • H01S5/04256Electrodes, e.g. characterised by the structure characterised by the configuration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054Methods of obtaining the confinement
    • H01S5/2059Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
ES497606A 1979-12-13 1980-12-11 Un dispositivo laser semiconductor Granted ES497606A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7908969A NL7908969A (nl) 1979-12-13 1979-12-13 Halfgeleiderlaser.

Publications (2)

Publication Number Publication Date
ES8201774A1 ES8201774A1 (es) 1981-12-16
ES497606A0 true ES497606A0 (es) 1981-12-16

Family

ID=19834312

Family Applications (1)

Application Number Title Priority Date Filing Date
ES497606A Granted ES497606A0 (es) 1979-12-13 1980-12-11 Un dispositivo laser semiconductor

Country Status (9)

Country Link
US (1) US4375686A (es)
JP (1) JPS5932910B2 (es)
AU (1) AU6523380A (es)
DE (1) DE3046238A1 (es)
ES (1) ES497606A0 (es)
FR (1) FR2471683A1 (es)
GB (1) GB2065961B (es)
IT (1) IT1134661B (es)
NL (1) NL7908969A (es)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400813A (en) * 1981-07-20 1983-08-23 Bell Telephone Laboratories, Incorporated Crenelated-ridge waveguide laser
US4534033A (en) * 1981-08-25 1985-08-06 Handotal Kenkyu Shinkokai Three terminal semiconductor laser
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路
DE3923354A1 (de) * 1989-07-14 1991-01-24 Licentia Gmbh Halbleiterlaser
JPH0719800Y2 (ja) * 1991-01-30 1995-05-10 ローム株式会社 Ledアレイ
JP2015138905A (ja) * 2014-01-23 2015-07-30 三菱電機株式会社 分布帰還型半導体レーザ素子、分布帰還型半導体レーザ素子の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439316C3 (de) 1963-12-13 1975-07-31 Siemens Ag, 1000 Berlin Und 8000 Muenchen Anordnung zur Erzeugung und/oder Verstärkung elektromagnetischer Strahlung
JPS5074388A (es) * 1973-11-01 1975-06-19
JPS52109884A (en) * 1976-03-11 1977-09-14 Nec Corp Stripe type hetero junction semoonductor laser
NL7607299A (nl) * 1976-07-02 1978-01-04 Philips Nv Injektielaser.
NL7900668A (nl) * 1978-11-08 1980-05-12 Philips Nv Inrichting voor het opwekken of versterken van coheren- te electromagnetische straling, en werkwijze voor het vervaardigen van de inrichting.

Also Published As

Publication number Publication date
IT8026552A0 (it) 1980-12-10
NL7908969A (nl) 1981-07-16
DE3046238A1 (de) 1981-08-27
GB2065961A (en) 1981-07-01
GB2065961B (en) 1983-07-06
FR2471683A1 (fr) 1981-06-19
ES8201774A1 (es) 1981-12-16
AU6523380A (en) 1981-06-18
IT1134661B (it) 1986-08-13
FR2471683B1 (es) 1982-06-18
DE3046238C2 (es) 1988-01-14
JPS5932910B2 (ja) 1984-08-11
US4375686A (en) 1983-03-01
JPS5694683A (en) 1981-07-31

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