ES497606A0 - Un dispositivo laser semiconductor - Google Patents
Un dispositivo laser semiconductorInfo
- Publication number
- ES497606A0 ES497606A0 ES497606A ES497606A ES497606A0 ES 497606 A0 ES497606 A0 ES 497606A0 ES 497606 A ES497606 A ES 497606A ES 497606 A ES497606 A ES 497606A ES 497606 A0 ES497606 A0 ES 497606A0
- Authority
- ES
- Spain
- Prior art keywords
- laser device
- semiconductive laser
- semiconductive
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7908969A NL7908969A (nl) | 1979-12-13 | 1979-12-13 | Halfgeleiderlaser. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES497606A0 true ES497606A0 (es) | 1981-12-16 |
| ES8201774A1 ES8201774A1 (es) | 1981-12-16 |
Family
ID=19834312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES497606A Expired ES8201774A1 (es) | 1979-12-13 | 1980-12-11 | Un dispositivo laser semiconductor |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4375686A (es) |
| JP (1) | JPS5932910B2 (es) |
| AU (1) | AU6523380A (es) |
| DE (1) | DE3046238A1 (es) |
| ES (1) | ES8201774A1 (es) |
| FR (1) | FR2471683A1 (es) |
| GB (1) | GB2065961B (es) |
| IT (1) | IT1134661B (es) |
| NL (1) | NL7908969A (es) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4400813A (en) * | 1981-07-20 | 1983-08-23 | Bell Telephone Laboratories, Incorporated | Crenelated-ridge waveguide laser |
| US4534033A (en) * | 1981-08-25 | 1985-08-06 | Handotal Kenkyu Shinkokai | Three terminal semiconductor laser |
| JPS5967677A (ja) * | 1982-07-01 | 1984-04-17 | Semiconductor Res Found | 光集積回路 |
| DE3923354A1 (de) * | 1989-07-14 | 1991-01-24 | Licentia Gmbh | Halbleiterlaser |
| JPH0719800Y2 (ja) * | 1991-01-30 | 1995-05-10 | ローム株式会社 | Ｌｅｄアレイ |
| JP2015138905A (ja) | 2014-01-23 | 2015-07-30 | 三菱電機株式会社 | 分布帰還型半導体レーザ素子、分布帰還型半導体レーザ素子の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1439316C3 (de) | 1963-12-13 | 1975-07-31 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Anordnung zur Erzeugung und/oder Verstärkung elektromagnetischer Strahlung |
| JPS5074388A (es) * | 1973-11-01 | 1975-06-19 | ||
| JPS52109884A (en) * | 1976-03-11 | 1977-09-14 | Nec Corp | Stripe type hetero junction semoonductor laser |
| NL7607299A (nl) * | 1976-07-02 | 1978-01-04 | Philips Nv | Injektielaser. |
| NL7900668A (nl) * | 1978-11-08 | 1980-05-12 | Philips Nv | Inrichting voor het opwekken of versterken van coheren- te electromagnetische straling, en werkwijze voor het vervaardigen van de inrichting. |
-
1979
- 1979-12-13 NL NL7908969A patent/NL7908969A/nl not_active Application Discontinuation
-
1980
- 1980-12-03 US US06/212,376 patent/US4375686A/en not_active Expired - Lifetime
- 1980-12-05 FR FR8025873A patent/FR2471683A1/fr active Granted
- 1980-12-08 DE DE19803046238 patent/DE3046238A1/de active Granted
- 1980-12-10 IT IT26552/80A patent/IT1134661B/it active
- 1980-12-10 AU AU65233/80A patent/AU6523380A/en not_active Abandoned
- 1980-12-10 GB GB8039500A patent/GB2065961B/en not_active Expired
- 1980-12-10 JP JP55173359A patent/JPS5932910B2/ja not_active Expired
- 1980-12-11 ES ES497606A patent/ES8201774A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3046238C2 (es) | 1988-01-14 |
| ES8201774A1 (es) | 1981-12-16 |
| FR2471683B1 (es) | 1982-06-18 |
| DE3046238A1 (de) | 1981-08-27 |
| GB2065961B (en) | 1983-07-06 |
| JPS5694683A (en) | 1981-07-31 |
| IT1134661B (it) | 1986-08-13 |
| IT8026552A0 (it) | 1980-12-10 |
| JPS5932910B2 (ja) | 1984-08-11 |
| FR2471683A1 (fr) | 1981-06-19 |
| GB2065961A (en) | 1981-07-01 |
| US4375686A (en) | 1983-03-01 |
| AU6523380A (en) | 1981-06-18 |
| NL7908969A (nl) | 1981-07-16 |
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