IT1110026B - Dispositivo semiconduttore - Google Patents
Dispositivo semiconduttoreInfo
- Publication number
- IT1110026B IT1110026B IT19305/79A IT1930579A IT1110026B IT 1110026 B IT1110026 B IT 1110026B IT 19305/79 A IT19305/79 A IT 19305/79A IT 1930579 A IT1930579 A IT 1930579A IT 1110026 B IT1110026 B IT 1110026B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductive device
- semiconductive
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7800582A NL183859C (nl) | 1978-01-18 | 1978-01-18 | Halfgeleiderinrichting bevattende tenminste een halfgeleiderelement met drie opeenvolgende zones van afwisselend geleidingstype. |
NLAANVRAGE7807835,A NL184552C (nl) | 1978-07-24 | 1978-07-24 | Halfgeleiderinrichting voor hoge spanningen. |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7919305A0 IT7919305A0 (it) | 1979-01-15 |
IT1110026B true IT1110026B (it) | 1985-12-23 |
Family
ID=26645384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT19305/79A IT1110026B (it) | 1978-01-18 | 1979-01-15 | Dispositivo semiconduttore |
Country Status (15)
Country | Link |
---|---|
US (1) | US4292642A (it) |
JP (1) | JPS54109780A (it) |
AT (1) | AT380975B (it) |
AU (1) | AU518446B2 (it) |
BE (1) | BE873570A (it) |
BR (1) | BR7900229A (it) |
CA (1) | CA1131801A (it) |
CH (1) | CH638928A5 (it) |
DE (1) | DE2901193C2 (it) |
ES (1) | ES476907A1 (it) |
FR (1) | FR2415370A1 (it) |
GB (1) | GB2013029B (it) |
IT (1) | IT1110026B (it) |
PL (1) | PL116562B1 (it) |
SE (1) | SE432497B (it) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL184589C (nl) * | 1979-07-13 | 1989-09-01 | Philips Nv | Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting. |
NL186665C (nl) * | 1980-03-10 | 1992-01-16 | Philips Nv | Halfgeleiderinrichting. |
DE3017313A1 (de) * | 1980-05-06 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung |
US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
DE3029553A1 (de) * | 1980-08-04 | 1982-03-11 | Siemens AG, 1000 Berlin und 8000 München | Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung |
NL187415C (nl) * | 1980-09-08 | 1991-09-16 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
JPS5753977A (ja) * | 1980-09-17 | 1982-03-31 | Matsushita Electronics Corp | Toranjisuta |
GB2090053B (en) * | 1980-12-19 | 1984-09-19 | Philips Electronic Associated | Mesfet |
US4783688A (en) * | 1981-12-02 | 1988-11-08 | U.S. Philips Corporation | Schottky barrier field effect transistors |
US4485392A (en) * | 1981-12-28 | 1984-11-27 | North American Philips Corporation | Lateral junction field effect transistor device |
US4942440A (en) * | 1982-10-25 | 1990-07-17 | General Electric Company | High voltage semiconductor devices with reduced on-resistance |
US4626879A (en) * | 1982-12-21 | 1986-12-02 | North American Philips Corporation | Lateral double-diffused MOS transistor devices suitable for source-follower applications |
FR2543739B1 (fr) * | 1983-03-30 | 1986-04-18 | Radiotechnique Compelec | Procede de realisation d'un transistor bipolaire haute tension |
GB2148589B (en) * | 1983-10-18 | 1987-04-23 | Standard Telephones Cables Ltd | Improvements in intergrated circuits |
US4862242A (en) * | 1983-12-05 | 1989-08-29 | General Electric Company | Semiconductor wafer with an electrically-isolated semiconductor device |
US4639761A (en) * | 1983-12-16 | 1987-01-27 | North American Philips Corporation | Combined bipolar-field effect transistor resurf devices |
US4622568A (en) * | 1984-05-09 | 1986-11-11 | Eaton Corporation | Planar field-shaped bidirectional power FET |
JPS61154063A (ja) * | 1984-12-26 | 1986-07-12 | Toshiba Corp | 光半導体装置およびその製造方法 |
US4890150A (en) * | 1985-12-05 | 1989-12-26 | North American Philips Corporation | Dielectric passivation |
JPS63253664A (ja) * | 1987-04-10 | 1988-10-20 | Sony Corp | バイポ−ラトランジスタ |
US4890146A (en) * | 1987-12-16 | 1989-12-26 | Siliconix Incorporated | High voltage level shift semiconductor device |
DE3832731A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterdiode |
DE3832732A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterdiode |
DE3832709A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Thyristor |
US5155568A (en) * | 1989-04-14 | 1992-10-13 | Hewlett-Packard Company | High-voltage semiconductor device |
JPH03235367A (ja) * | 1990-02-13 | 1991-10-21 | Mitsubishi Electric Corp | 半導体集積回路装置 |
US5386136A (en) * | 1991-05-06 | 1995-01-31 | Siliconix Incorporated | Lightly-doped drain MOSFET with improved breakdown characteristics |
US5374843A (en) * | 1991-05-06 | 1994-12-20 | Silinconix, Inc. | Lightly-doped drain MOSFET with improved breakdown characteristics |
SE500814C2 (sv) * | 1993-01-25 | 1994-09-12 | Ericsson Telefon Ab L M | Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning |
US6831331B2 (en) | 1995-11-15 | 2004-12-14 | Denso Corporation | Power MOS transistor for absorbing surge current |
US6242787B1 (en) | 1995-11-15 | 2001-06-05 | Denso Corporation | Semiconductor device and manufacturing method thereof |
JP3547884B2 (ja) | 1995-12-30 | 2004-07-28 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP3917211B2 (ja) * | 1996-04-15 | 2007-05-23 | 三菱電機株式会社 | 半導体装置 |
JP3562611B2 (ja) * | 1996-11-05 | 2004-09-08 | ソニー株式会社 | 半導体装置及びその製造方法 |
SE512661C2 (sv) * | 1996-11-13 | 2000-04-17 | Ericsson Telefon Ab L M | Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma |
US5912501A (en) * | 1997-07-18 | 1999-06-15 | Advanced Micro Devices, Inc. | Elimination of radius of curvature effects of p-n junction avalanche breakdown using slots |
US5859469A (en) * | 1997-07-18 | 1999-01-12 | Advanced Micro Devices, Inc. | Use of tungsten filled slots as ground plane in integrated circuit structure |
US6011297A (en) * | 1997-07-18 | 2000-01-04 | Advanced Micro Devices,Inc. | Use of multiple slots surrounding base region of a bipolar junction transistor to increase cumulative breakdown voltage |
JP3768656B2 (ja) | 1997-09-18 | 2006-04-19 | 三菱電機株式会社 | 半導体装置 |
DE10036007B4 (de) * | 2000-07-25 | 2015-03-26 | Robert Bosch Gmbh | Anordnung mit einem Magnetotransistor, Verfahren zum Herstellen einer Anordnung mit einem Magnetotransistor und Verfahren zum Messen eines Magnetfeldes |
JP3846796B2 (ja) * | 2002-11-28 | 2006-11-15 | 三菱電機株式会社 | 半導体装置 |
JP4094984B2 (ja) * | 2003-04-24 | 2008-06-04 | 三菱電機株式会社 | 半導体装置 |
JP4326835B2 (ja) * | 2003-05-20 | 2009-09-09 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法 |
JP4731816B2 (ja) * | 2004-01-26 | 2011-07-27 | 三菱電機株式会社 | 半導体装置 |
JP4593126B2 (ja) * | 2004-02-18 | 2010-12-08 | 三菱電機株式会社 | 半導体装置 |
JP4667756B2 (ja) * | 2004-03-03 | 2011-04-13 | 三菱電機株式会社 | 半導体装置 |
JP4620437B2 (ja) * | 2004-12-02 | 2011-01-26 | 三菱電機株式会社 | 半導体装置 |
US7714352B2 (en) * | 2006-02-09 | 2010-05-11 | Nissan Motor Co., Ltd. | Hetero junction semiconductor device |
JP4751308B2 (ja) * | 2006-12-18 | 2011-08-17 | 住友電気工業株式会社 | 横型接合型電界効果トランジスタ |
JP5191132B2 (ja) * | 2007-01-29 | 2013-04-24 | 三菱電機株式会社 | 半導体装置 |
US9087713B2 (en) * | 2012-10-12 | 2015-07-21 | Power Integrations, Inc. | Semiconductor device with shared region |
JP6207985B2 (ja) | 2013-11-21 | 2017-10-04 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US11063116B2 (en) | 2016-09-13 | 2021-07-13 | Mitsubishi Electric Corporation | Semiconductor device |
JP7407590B2 (ja) | 2019-12-25 | 2024-01-04 | 三菱電機株式会社 | 半導体装置および集積回路 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3442723A (en) * | 1964-12-30 | 1969-05-06 | Sony Corp | Method of making a semiconductor junction by diffusion |
NL161621C (nl) * | 1968-10-16 | 1980-02-15 | Philips Nv | Halfgeleiderinrichting met veldeffecttransistor. |
JPS4932028B1 (it) * | 1969-06-24 | 1974-08-27 | ||
JPS5012665B1 (it) * | 1970-05-19 | 1975-05-13 | ||
GB1471617A (en) * | 1973-06-21 | 1977-04-27 | Sony Corp | Circuits comprising a semiconductor device |
JPS50147673A (it) * | 1974-05-17 | 1975-11-26 | ||
JPS5140881A (ja) * | 1974-10-04 | 1976-04-06 | Hitachi Ltd | Handotaisochi |
US4017882A (en) * | 1975-12-15 | 1977-04-12 | Rca Corporation | Transistor having integrated protection |
US4132996A (en) * | 1976-11-08 | 1979-01-02 | General Electric Company | Electric field-controlled semiconductor device |
NL184551C (nl) * | 1978-07-24 | 1989-08-16 | Philips Nv | Veldeffekttransistor met geisoleerde stuurelektrode. |
-
1979
- 1979-01-11 CA CA319,526A patent/CA1131801A/en not_active Expired
- 1979-01-13 DE DE2901193A patent/DE2901193C2/de not_active Expired
- 1979-01-15 GB GB791412A patent/GB2013029B/en not_active Expired
- 1979-01-15 IT IT19305/79A patent/IT1110026B/it active
- 1979-01-15 BR BR7900229A patent/BR7900229A/pt unknown
- 1979-01-15 SE SE7900337A patent/SE432497B/sv not_active IP Right Cessation
- 1979-01-16 AT AT0031179A patent/AT380975B/de not_active IP Right Cessation
- 1979-01-16 ES ES476907A patent/ES476907A1/es not_active Expired
- 1979-01-16 CH CH41779A patent/CH638928A5/de not_active IP Right Cessation
- 1979-01-16 AU AU43405/79A patent/AU518446B2/en not_active Ceased
- 1979-01-16 US US06/004,004 patent/US4292642A/en not_active Expired - Lifetime
- 1979-01-16 PL PL1979212822A patent/PL116562B1/pl unknown
- 1979-01-17 FR FR7901086A patent/FR2415370A1/fr active Granted
- 1979-01-18 BE BE0/192972A patent/BE873570A/xx not_active IP Right Cessation
- 1979-01-18 JP JP346579A patent/JPS54109780A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE2901193C2 (de) | 1982-09-30 |
BR7900229A (pt) | 1979-08-14 |
IT7919305A0 (it) | 1979-01-15 |
PL212822A1 (pl) | 1979-09-10 |
AU4340579A (en) | 1979-07-26 |
ATA31179A (de) | 1985-12-15 |
US4292642A (en) | 1981-09-29 |
ES476907A1 (es) | 1979-05-16 |
AU518446B2 (en) | 1981-10-01 |
CH638928A5 (de) | 1983-10-14 |
DE2901193A1 (de) | 1979-07-19 |
JPS54109780A (en) | 1979-08-28 |
FR2415370B1 (it) | 1984-06-08 |
AT380975B (de) | 1986-08-11 |
SE432497B (sv) | 1984-04-02 |
CA1131801A (en) | 1982-09-14 |
FR2415370A1 (fr) | 1979-08-17 |
BE873570A (fr) | 1979-07-18 |
GB2013029B (en) | 1982-05-19 |
GB2013029A (en) | 1979-08-01 |
PL116562B1 (en) | 1981-06-30 |
SE7900337L (sv) | 1979-07-19 |
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