IT1094695B - Dispositivo semiconduttore - Google Patents

Dispositivo semiconduttore

Info

Publication number
IT1094695B
IT1094695B IT23662/78A IT2366278A IT1094695B IT 1094695 B IT1094695 B IT 1094695B IT 23662/78 A IT23662/78 A IT 23662/78A IT 2366278 A IT2366278 A IT 2366278A IT 1094695 B IT1094695 B IT 1094695B
Authority
IT
Italy
Prior art keywords
semiconductive device
semiconductive
Prior art date
Application number
IT23662/78A
Other languages
English (en)
Other versions
IT7823662A0 (it
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT7823662A0 publication Critical patent/IT7823662A0/it
Application granted granted Critical
Publication of IT1094695B publication Critical patent/IT1094695B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804Emitter regions of bipolar transistors
    • H01L29/0813Non-interconnected multi-emitter structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
IT23662/78A 1977-05-25 1978-05-22 Dispositivo semiconduttore IT1094695B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7705729,A NL181612C (nl) 1977-05-25 1977-05-25 Halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
IT7823662A0 IT7823662A0 (it) 1978-05-22
IT1094695B true IT1094695B (it) 1985-08-02

Family

ID=19828611

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23662/78A IT1094695B (it) 1977-05-25 1978-05-22 Dispositivo semiconduttore

Country Status (10)

Country Link
JP (1) JPS53145581A (it)
AU (1) AU518290B2 (it)
CA (1) CA1097430A (it)
DE (1) DE2822166A1 (it)
ES (1) ES470066A1 (it)
FR (1) FR2392500A1 (it)
GB (1) GB1600638A (it)
IT (1) IT1094695B (it)
NL (1) NL181612C (it)
SE (1) SE433547B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017750C2 (de) * 1980-05-09 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor
NL8204878A (nl) * 1982-12-17 1984-07-16 Philips Nv Halfgeleiderinrichting.
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
EP0309784A1 (de) * 1987-09-30 1989-04-05 Siemens Aktiengesellschaft Anschlussstreifenstruktur für Bipolar-Transistoren
DE3802821A1 (de) * 1988-01-30 1989-08-03 Bosch Gmbh Robert Leistungstransistor
DE3802767A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Elektronisches geraet
FR2634948B1 (fr) * 1988-07-29 1990-10-05 Radiotechnique Compelec Transistor de puissance a emetteur multi-cellulaires
DE102004046630A1 (de) * 2004-09-25 2006-03-30 Robert Bosch Gmbh Integrierte Schaltung für gepulste Leistungsströme

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
GB1081509A (en) * 1965-04-07 1967-08-31 Itt Transistor
DE1539871A1 (de) * 1966-09-26 1970-02-12 Itt Ind Gmbh Deutsche Silizium-Planartransistor
US3704398A (en) * 1970-02-14 1972-11-28 Nippon Electric Co Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
JPS5261968A (en) * 1975-11-18 1977-05-21 Matsushita Electronics Corp Transistor
JPH05261968A (ja) * 1992-01-09 1993-10-12 Nec Corp レーザプリンタ

Also Published As

Publication number Publication date
DE2822166A1 (de) 1978-11-30
SE433547B (sv) 1984-05-28
SE7805782L (sv) 1978-11-26
NL181612B (nl) 1987-04-16
NL7705729A (nl) 1978-11-28
AU518290B2 (en) 1981-09-24
AU3635178A (en) 1979-11-29
IT7823662A0 (it) 1978-05-22
GB1600638A (en) 1981-10-21
FR2392500B1 (it) 1984-11-16
DE2822166C2 (it) 1988-12-15
FR2392500A1 (fr) 1978-12-22
CA1097430A (en) 1981-03-10
NL181612C (nl) 1988-03-16
ES470066A1 (es) 1979-02-01
JPS53145581A (en) 1978-12-18

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960628