FR2634948B1 - Transistor de puissance a emetteur multi-cellulaires - Google Patents
Transistor de puissance a emetteur multi-cellulairesInfo
- Publication number
- FR2634948B1 FR2634948B1 FR8810277A FR8810277A FR2634948B1 FR 2634948 B1 FR2634948 B1 FR 2634948B1 FR 8810277 A FR8810277 A FR 8810277A FR 8810277 A FR8810277 A FR 8810277A FR 2634948 B1 FR2634948 B1 FR 2634948B1
- Authority
- FR
- France
- Prior art keywords
- power transistor
- transmitter power
- cellular transmitter
- cellular
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8810277A FR2634948B1 (fr) | 1988-07-29 | 1988-07-29 | Transistor de puissance a emetteur multi-cellulaires |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8810277A FR2634948B1 (fr) | 1988-07-29 | 1988-07-29 | Transistor de puissance a emetteur multi-cellulaires |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2634948A1 FR2634948A1 (fr) | 1990-02-02 |
FR2634948B1 true FR2634948B1 (fr) | 1990-10-05 |
Family
ID=9368936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8810277A Expired - Fee Related FR2634948B1 (fr) | 1988-07-29 | 1988-07-29 | Transistor de puissance a emetteur multi-cellulaires |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2634948B1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1024525A1 (fr) * | 1999-01-28 | 2000-08-02 | STMicroelectronics S.r.l. | Structure de puissance integrée pour applications à hautes fréquences |
JP2003045882A (ja) | 2001-07-27 | 2003-02-14 | Nec Corp | 半導体装置及びその設計方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4306246A (en) * | 1976-09-29 | 1981-12-15 | Motorola, Inc. | Method for trimming active semiconductor devices |
NL181612C (nl) * | 1977-05-25 | 1988-03-16 | Philips Nv | Halfgeleiderinrichting. |
-
1988
- 1988-07-29 FR FR8810277A patent/FR2634948B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2634948A1 (fr) | 1990-02-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
CD | Change of name or company name | ||
ST | Notification of lapse |