FR2634948B1 - Transistor de puissance a emetteur multi-cellulaires - Google Patents

Transistor de puissance a emetteur multi-cellulaires

Info

Publication number
FR2634948B1
FR2634948B1 FR8810277A FR8810277A FR2634948B1 FR 2634948 B1 FR2634948 B1 FR 2634948B1 FR 8810277 A FR8810277 A FR 8810277A FR 8810277 A FR8810277 A FR 8810277A FR 2634948 B1 FR2634948 B1 FR 2634948B1
Authority
FR
France
Prior art keywords
power transistor
transmitter power
cellular transmitter
cellular
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8810277A
Other languages
English (en)
Other versions
FR2634948A1 (fr
Inventor
Bernard Roger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR8810277A priority Critical patent/FR2634948B1/fr
Publication of FR2634948A1 publication Critical patent/FR2634948A1/fr
Application granted granted Critical
Publication of FR2634948B1 publication Critical patent/FR2634948B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804Emitter regions of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
FR8810277A 1988-07-29 1988-07-29 Transistor de puissance a emetteur multi-cellulaires Expired - Fee Related FR2634948B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8810277A FR2634948B1 (fr) 1988-07-29 1988-07-29 Transistor de puissance a emetteur multi-cellulaires

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8810277A FR2634948B1 (fr) 1988-07-29 1988-07-29 Transistor de puissance a emetteur multi-cellulaires

Publications (2)

Publication Number Publication Date
FR2634948A1 FR2634948A1 (fr) 1990-02-02
FR2634948B1 true FR2634948B1 (fr) 1990-10-05

Family

ID=9368936

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8810277A Expired - Fee Related FR2634948B1 (fr) 1988-07-29 1988-07-29 Transistor de puissance a emetteur multi-cellulaires

Country Status (1)

Country Link
FR (1) FR2634948B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1024525A1 (fr) * 1999-01-28 2000-08-02 STMicroelectronics S.r.l. Structure de puissance integrée pour applications à hautes fréquences
JP2003045882A (ja) 2001-07-27 2003-02-14 Nec Corp 半導体装置及びその設計方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4306246A (en) * 1976-09-29 1981-12-15 Motorola, Inc. Method for trimming active semiconductor devices
NL181612C (nl) * 1977-05-25 1988-03-16 Philips Nv Halfgeleiderinrichting.

Also Published As

Publication number Publication date
FR2634948A1 (fr) 1990-02-02

Similar Documents

Publication Publication Date Title
KR890012437A (ko) 차량용 전원장치
KR900008180U (ko) 전동 공구용 변속기구
ES551419A0 (es) Un generador de impulsos
DE69024560D1 (de) Funksender mit Ausgangsleistungssteuerung
IT8967113A0 (it) Dispositivo di trasmissione di po tenza per bicicletta
TR24737A (tr) Polimerik suelfid mineral depresoerleri
FR2585480B1 (fr) Generateur de modeles a laser
FR2624231B1 (fr) Dispositif de transmission de puissance
BR8505091A (pt) Dispositivo de alimentacao eletrica de microprocessadores
KR900008752A (ko) 전력변환장치
FR2633687B1 (fr) Courroie striee de transmission de puissance
DE3856463D1 (de) Leistungstransistor
ES541197A0 (es) Un dispositivo de direccion de potencia
FR2634948B1 (fr) Transistor de puissance a emetteur multi-cellulaires
BR9301510A (pt) Unidade de potencia pneumatica
KR900010271A (ko) 간헐적 동력전달장치
FR2589209B1 (fr) Courroie de transmission de puissance perfectionnee
KR900012046U (ko) 파워스티어링 장치
DE58909717D1 (de) Leistungstransistor
KR900004118U (ko) 충전식 착탈 송신기
IT8921976A0 (it) Disposizione trasmittente
ATE76367T1 (de) Leistungsuebertragungseinheit.
KR860011983U (ko) 출입문용 멈춤구
BR8802798A (pt) Hidroeletrica de correnteza
ES289896Y (es) Dispositivo transmisor de energia luminosa perfeccionado

Legal Events

Date Code Title Description
CD Change of name or company name
CD Change of name or company name
ST Notification of lapse