NL7705729A - Halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting.

Info

Publication number
NL7705729A
NL7705729A NL7705729A NL7705729A NL7705729A NL 7705729 A NL7705729 A NL 7705729A NL 7705729 A NL7705729 A NL 7705729A NL 7705729 A NL7705729 A NL 7705729A NL 7705729 A NL7705729 A NL 7705729A
Authority
NL
Netherlands
Prior art keywords
semi
guide device
guide
Prior art date
Application number
NL7705729A
Other languages
English (en)
Other versions
NL181612C (nl
NL181612B (nl
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE7705729,A priority Critical patent/NL181612C/nl
Priority to CA303,661A priority patent/CA1097430A/en
Priority to DE19782822166 priority patent/DE2822166A1/de
Priority to ES470066A priority patent/ES470066A1/es
Priority to AU36351/78A priority patent/AU518290B2/en
Priority to SE7805782A priority patent/SE433547B/sv
Priority to IT23662/78A priority patent/IT1094695B/it
Priority to JP6009778A priority patent/JPS53145581A/ja
Priority to GB21172/78A priority patent/GB1600638A/en
Priority to FR7815569A priority patent/FR2392500A1/fr
Publication of NL7705729A publication Critical patent/NL7705729A/nl
Publication of NL181612B publication Critical patent/NL181612B/nl
Application granted granted Critical
Publication of NL181612C publication Critical patent/NL181612C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0813—Non-interconnected multi-emitter structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
NLAANVRAGE7705729,A 1977-05-25 1977-05-25 Halfgeleiderinrichting. NL181612C (nl)

Priority Applications (10)

Application Number Priority Date Filing Date Title
NLAANVRAGE7705729,A NL181612C (nl) 1977-05-25 1977-05-25 Halfgeleiderinrichting.
CA303,661A CA1097430A (en) 1977-05-25 1978-05-18 Semiconductor device
DE19782822166 DE2822166A1 (de) 1977-05-25 1978-05-20 Halbleiteranordnung
AU36351/78A AU518290B2 (en) 1977-05-25 1978-05-22 Bipolar transistor having a divided emitter configuration
ES470066A ES470066A1 (es) 1977-05-25 1978-05-22 Un dispositivo semiconductor perfeccionado
SE7805782A SE433547B (sv) 1977-05-25 1978-05-22 Halvledaranordning innefattande en transistor med en rad av fingerliknande emitterregioner med olika lengder
IT23662/78A IT1094695B (it) 1977-05-25 1978-05-22 Dispositivo semiconduttore
JP6009778A JPS53145581A (en) 1977-05-25 1978-05-22 Semiconductor
GB21172/78A GB1600638A (en) 1977-05-25 1978-05-22 Semiconductor device
FR7815569A FR2392500A1 (fr) 1977-05-25 1978-05-25 Dispositif semi-conducteur comportant des doigts emetteurs de longueur variable

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7705729,A NL181612C (nl) 1977-05-25 1977-05-25 Halfgeleiderinrichting.

Publications (3)

Publication Number Publication Date
NL7705729A true NL7705729A (nl) 1978-11-28
NL181612B NL181612B (nl) 1987-04-16
NL181612C NL181612C (nl) 1988-03-16

Family

ID=19828611

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7705729,A NL181612C (nl) 1977-05-25 1977-05-25 Halfgeleiderinrichting.

Country Status (10)

Country Link
JP (1) JPS53145581A (nl)
AU (1) AU518290B2 (nl)
CA (1) CA1097430A (nl)
DE (1) DE2822166A1 (nl)
ES (1) ES470066A1 (nl)
FR (1) FR2392500A1 (nl)
GB (1) GB1600638A (nl)
IT (1) IT1094695B (nl)
NL (1) NL181612C (nl)
SE (1) SE433547B (nl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4642668A (en) * 1982-12-17 1987-02-10 U.S. Philips Corporation Semiconductor device having improved thermal characteristics

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017750C2 (de) * 1980-05-09 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
EP0309784A1 (de) * 1987-09-30 1989-04-05 Siemens Aktiengesellschaft Anschlussstreifenstruktur für Bipolar-Transistoren
DE3802821A1 (de) * 1988-01-30 1989-08-03 Bosch Gmbh Robert Leistungstransistor
DE3802767A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Elektronisches geraet
FR2634948B1 (fr) * 1988-07-29 1990-10-05 Radiotechnique Compelec Transistor de puissance a emetteur multi-cellulaires
DE102004046630A1 (de) * 2004-09-25 2006-03-30 Robert Bosch Gmbh Integrierte Schaltung für gepulste Leistungsströme

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
GB1081509A (en) * 1965-04-07 1967-08-31 Itt Transistor
DE1539871A1 (de) * 1966-09-26 1970-02-12 Itt Ind Gmbh Deutsche Silizium-Planartransistor
US3704398A (en) * 1970-02-14 1972-11-28 Nippon Electric Co Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
JPS5261968A (en) * 1975-11-18 1977-05-21 Matsushita Electronics Corp Transistor
JPH05261968A (ja) * 1992-01-09 1993-10-12 Nec Corp レーザプリンタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4642668A (en) * 1982-12-17 1987-02-10 U.S. Philips Corporation Semiconductor device having improved thermal characteristics

Also Published As

Publication number Publication date
IT7823662A0 (it) 1978-05-22
DE2822166A1 (de) 1978-11-30
NL181612C (nl) 1988-03-16
JPS53145581A (en) 1978-12-18
ES470066A1 (es) 1979-02-01
SE7805782L (sv) 1978-11-26
GB1600638A (en) 1981-10-21
NL181612B (nl) 1987-04-16
FR2392500B1 (nl) 1984-11-16
CA1097430A (en) 1981-03-10
SE433547B (sv) 1984-05-28
FR2392500A1 (fr) 1978-12-22
AU518290B2 (en) 1981-09-24
IT1094695B (it) 1985-08-02
AU3635178A (en) 1979-11-29
DE2822166C2 (nl) 1988-12-15

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Legal Events

Date Code Title Description
BC A request for examination has been filed
A85 Still pending on 85-01-01
R1VN Request for mentioning name(s) of the inventor(s) in the patent or request for changing the name(s) of inventor(s) with respec
R1VN Request for mentioning name(s) of the inventor(s) in the patent or request for changing the name(s) of inventor(s) with respec
NP1 Patent granted (not automatically)
V1 Lapsed because of non-payment of the annual fee