CA1097430A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- CA1097430A CA1097430A CA303,661A CA303661A CA1097430A CA 1097430 A CA1097430 A CA 1097430A CA 303661 A CA303661 A CA 303661A CA 1097430 A CA1097430 A CA 1097430A
- Authority
- CA
- Canada
- Prior art keywords
- emitter
- digits
- base
- contact
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 238000009826 distribution Methods 0.000 claims abstract description 12
- 239000004020 conductor Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 230000006872 improvement Effects 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 12
- 230000006378 damage Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241000370685 Arge Species 0.000 description 1
- 101150026794 SHO1 gene Proteins 0.000 description 1
- 241000153282 Theope Species 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0813—Non-interconnected multi-emitter structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7705729 | 1977-05-25 | ||
NLAANVRAGE7705729,A NL181612C (nl) | 1977-05-25 | 1977-05-25 | Halfgeleiderinrichting. |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1097430A true CA1097430A (en) | 1981-03-10 |
Family
ID=19828611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA303,661A Expired CA1097430A (en) | 1977-05-25 | 1978-05-18 | Semiconductor device |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS53145581A (nl) |
AU (1) | AU518290B2 (nl) |
CA (1) | CA1097430A (nl) |
DE (1) | DE2822166A1 (nl) |
ES (1) | ES470066A1 (nl) |
FR (1) | FR2392500A1 (nl) |
GB (1) | GB1600638A (nl) |
IT (1) | IT1094695B (nl) |
NL (1) | NL181612C (nl) |
SE (1) | SE433547B (nl) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3017750C2 (de) * | 1980-05-09 | 1985-03-07 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor |
NL8204878A (nl) * | 1982-12-17 | 1984-07-16 | Philips Nv | Halfgeleiderinrichting. |
US4617471A (en) * | 1983-12-27 | 1986-10-14 | Kabushiki Kaisha Toshiba | Image sensing device |
EP0309784A1 (de) * | 1987-09-30 | 1989-04-05 | Siemens Aktiengesellschaft | Anschlussstreifenstruktur für Bipolar-Transistoren |
DE3802821A1 (de) * | 1988-01-30 | 1989-08-03 | Bosch Gmbh Robert | Leistungstransistor |
DE3802767A1 (de) * | 1988-01-30 | 1989-08-10 | Bosch Gmbh Robert | Elektronisches geraet |
FR2634948B1 (fr) * | 1988-07-29 | 1990-10-05 | Radiotechnique Compelec | Transistor de puissance a emetteur multi-cellulaires |
DE102004046630A1 (de) * | 2004-09-25 | 2006-03-30 | Robert Bosch Gmbh | Integrierte Schaltung für gepulste Leistungsströme |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3358197A (en) * | 1963-05-22 | 1967-12-12 | Itt | Semiconductor device |
US3225261A (en) * | 1963-11-19 | 1965-12-21 | Fairchild Camera Instr Co | High frequency power transistor |
GB1081509A (en) * | 1965-04-07 | 1967-08-31 | Itt | Transistor |
DE1539871A1 (de) * | 1966-09-26 | 1970-02-12 | Itt Ind Gmbh Deutsche | Silizium-Planartransistor |
US3704398A (en) * | 1970-02-14 | 1972-11-28 | Nippon Electric Co | Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures |
JPS5261968A (en) * | 1975-11-18 | 1977-05-21 | Matsushita Electronics Corp | Transistor |
JPH05261968A (ja) * | 1992-01-09 | 1993-10-12 | Nec Corp | レーザプリンタ |
-
1977
- 1977-05-25 NL NLAANVRAGE7705729,A patent/NL181612C/nl not_active IP Right Cessation
-
1978
- 1978-05-18 CA CA303,661A patent/CA1097430A/en not_active Expired
- 1978-05-20 DE DE19782822166 patent/DE2822166A1/de active Granted
- 1978-05-22 SE SE7805782A patent/SE433547B/sv not_active IP Right Cessation
- 1978-05-22 GB GB21172/78A patent/GB1600638A/en not_active Expired
- 1978-05-22 IT IT23662/78A patent/IT1094695B/it active
- 1978-05-22 AU AU36351/78A patent/AU518290B2/en not_active Expired
- 1978-05-22 JP JP6009778A patent/JPS53145581A/ja active Pending
- 1978-05-22 ES ES470066A patent/ES470066A1/es not_active Expired
- 1978-05-25 FR FR7815569A patent/FR2392500A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
DE2822166A1 (de) | 1978-11-30 |
SE433547B (sv) | 1984-05-28 |
SE7805782L (sv) | 1978-11-26 |
NL181612B (nl) | 1987-04-16 |
NL7705729A (nl) | 1978-11-28 |
AU518290B2 (en) | 1981-09-24 |
AU3635178A (en) | 1979-11-29 |
IT7823662A0 (it) | 1978-05-22 |
GB1600638A (en) | 1981-10-21 |
FR2392500B1 (nl) | 1984-11-16 |
DE2822166C2 (nl) | 1988-12-15 |
FR2392500A1 (fr) | 1978-12-22 |
NL181612C (nl) | 1988-03-16 |
IT1094695B (it) | 1985-08-02 |
ES470066A1 (es) | 1979-02-01 |
JPS53145581A (en) | 1978-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5374844A (en) | Bipolar transistor structure using ballast resistor | |
US20060267148A1 (en) | Solid-state high power device and method | |
CA1097430A (en) | Semiconductor device | |
JPH0347593B2 (nl) | ||
US6777783B2 (en) | Insulated gate bipolar transistor | |
US3234441A (en) | Junction transistor | |
US5637910A (en) | Multi-emitter or a multi-base transistor | |
US3961358A (en) | Leakage current prevention in semiconductor integrated circuit devices | |
JPH0216017B2 (nl) | ||
EP0091079A2 (en) | Power MOSFET | |
JPS60153163A (ja) | バイポ―ラトランジスタ―電界効果トランジスタ組合せ装置 | |
US4769688A (en) | Power bipolar transistor | |
Murphy et al. | Collector diffusion isolated integrated circuits | |
JPH04363046A (ja) | 半導体装置の製造方法 | |
CA1204521A (en) | Semiconductor device | |
CA1094692A (en) | Semiconductor device with layer of refractory material | |
US6064109A (en) | Ballast resistance for producing varied emitter current flow along the emitter's injecting edge | |
US3465214A (en) | High-current integrated-circuit power transistor | |
JP2622521B2 (ja) | ゲート遮断サイリスタ及びその製造方法 | |
JPS5856980B2 (ja) | 集積回路 | |
EP0064614A2 (en) | Improved emitter structure for semiconductor devices | |
EP0180315A2 (en) | High breakdown voltage semiconductor device | |
US5594272A (en) | Bipolar transistor with base and emitter contact holes having shorter central portions | |
US3475665A (en) | Electrode lead for semiconductor active devices | |
US5200803A (en) | Integrated circuit having a lateral multicollector transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |