AU518290B2 - Bipolar transistor having a divided emitter configuration - Google Patents

Bipolar transistor having a divided emitter configuration

Info

Publication number
AU518290B2
AU518290B2 AU36351/78A AU3635178A AU518290B2 AU 518290 B2 AU518290 B2 AU 518290B2 AU 36351/78 A AU36351/78 A AU 36351/78A AU 3635178 A AU3635178 A AU 3635178A AU 518290 B2 AU518290 B2 AU 518290B2
Authority
AU
Australia
Prior art keywords
bipolar transistor
emitter configuration
divided emitter
divided
configuration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU36351/78A
Other languages
English (en)
Other versions
AU3635178A (en
Inventor
H T-J Hacken
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of AU3635178A publication Critical patent/AU3635178A/en
Application granted granted Critical
Publication of AU518290B2 publication Critical patent/AU518290B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0813—Non-interconnected multi-emitter structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
AU36351/78A 1977-05-25 1978-05-22 Bipolar transistor having a divided emitter configuration Expired AU518290B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NLAANVRAGE7705729,A NL181612C (nl) 1977-05-25 1977-05-25 Halfgeleiderinrichting.
NLNL7705729 1977-05-25

Publications (2)

Publication Number Publication Date
AU3635178A AU3635178A (en) 1979-11-29
AU518290B2 true AU518290B2 (en) 1981-09-24

Family

ID=19828611

Family Applications (1)

Application Number Title Priority Date Filing Date
AU36351/78A Expired AU518290B2 (en) 1977-05-25 1978-05-22 Bipolar transistor having a divided emitter configuration

Country Status (10)

Country Link
JP (1) JPS53145581A (nl)
AU (1) AU518290B2 (nl)
CA (1) CA1097430A (nl)
DE (1) DE2822166A1 (nl)
ES (1) ES470066A1 (nl)
FR (1) FR2392500A1 (nl)
GB (1) GB1600638A (nl)
IT (1) IT1094695B (nl)
NL (1) NL181612C (nl)
SE (1) SE433547B (nl)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017750C2 (de) * 1980-05-09 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor
NL8204878A (nl) * 1982-12-17 1984-07-16 Philips Nv Halfgeleiderinrichting.
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
EP0309784A1 (de) * 1987-09-30 1989-04-05 Siemens Aktiengesellschaft Anschlussstreifenstruktur für Bipolar-Transistoren
DE3802821A1 (de) * 1988-01-30 1989-08-03 Bosch Gmbh Robert Leistungstransistor
DE3802767A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Elektronisches geraet
FR2634948B1 (fr) * 1988-07-29 1990-10-05 Radiotechnique Compelec Transistor de puissance a emetteur multi-cellulaires
DE102004046630A1 (de) * 2004-09-25 2006-03-30 Robert Bosch Gmbh Integrierte Schaltung für gepulste Leistungsströme

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
GB1081509A (en) * 1965-04-07 1967-08-31 Itt Transistor
DE1539871A1 (de) * 1966-09-26 1970-02-12 Itt Ind Gmbh Deutsche Silizium-Planartransistor
US3704398A (en) * 1970-02-14 1972-11-28 Nippon Electric Co Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
JPS5261968A (en) * 1975-11-18 1977-05-21 Matsushita Electronics Corp Transistor
JPH05261968A (ja) * 1992-01-09 1993-10-12 Nec Corp レーザプリンタ

Also Published As

Publication number Publication date
DE2822166A1 (de) 1978-11-30
SE433547B (sv) 1984-05-28
SE7805782L (sv) 1978-11-26
NL181612B (nl) 1987-04-16
NL7705729A (nl) 1978-11-28
AU3635178A (en) 1979-11-29
IT7823662A0 (it) 1978-05-22
GB1600638A (en) 1981-10-21
FR2392500B1 (nl) 1984-11-16
DE2822166C2 (nl) 1988-12-15
FR2392500A1 (fr) 1978-12-22
CA1097430A (en) 1981-03-10
NL181612C (nl) 1988-03-16
IT1094695B (it) 1985-08-02
ES470066A1 (es) 1979-02-01
JPS53145581A (en) 1978-12-18

Similar Documents

Publication Publication Date Title
AU517690B2 (en) High performance bipolar device
AU5081679A (en) Drip emitter
AU509323B2 (en) Vapour emitter
ZA804538B (en) Irrigation emitter unit
AU1580276A (en) Agricultural implement
JPS53122545A (en) Emitter for waterrdrop irrigation device
AU514277B2 (en) Bipolar electrode
IL58773A (en) Emitter unit
GB2047960B (en) Bipolar transistor manufacture
JPS5357739A (en) Electron emitter
JPS5496980A (en) Complementary bipolar transistor device
JPS5458371A (en) Bipolar transistor
JPS5680161A (en) Bipolar transistor
AU515183B2 (en) Bipolar electrode
AU2643377A (en) Drip irrigation emitter
DE2862201D1 (en) A cannula assembly
AU518290B2 (en) Bipolar transistor having a divided emitter configuration
GB2018113B (en) Irrigation emitter
GB2015248B (en) Transistor emitter with a resistive zone
JPS5438775A (en) Lateral bipolar transistor
IT7823887A0 (it) Interruttore a transistor bipolari.
AU2882277A (en) Trickle irrigation emitter
JPS5363874A (en) Bipolar transistor
JPS5339082A (en) Bipolar lateral transistor
AU5140879A (en) Irrigation emitter