JPS53145581A - Semiconductor - Google Patents
SemiconductorInfo
- Publication number
- JPS53145581A JPS53145581A JP6009778A JP6009778A JPS53145581A JP S53145581 A JPS53145581 A JP S53145581A JP 6009778 A JP6009778 A JP 6009778A JP 6009778 A JP6009778 A JP 6009778A JP S53145581 A JPS53145581 A JP S53145581A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0813—Non-interconnected multi-emitter structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7705729,A NL181612C (nl) | 1977-05-25 | 1977-05-25 | Halfgeleiderinrichting. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS53145581A true JPS53145581A (en) | 1978-12-18 |
Family
ID=19828611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6009778A Pending JPS53145581A (en) | 1977-05-25 | 1978-05-22 | Semiconductor |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPS53145581A (ja) |
| AU (1) | AU518290B2 (ja) |
| CA (1) | CA1097430A (ja) |
| DE (1) | DE2822166A1 (ja) |
| ES (1) | ES470066A1 (ja) |
| FR (1) | FR2392500A1 (ja) |
| GB (1) | GB1600638A (ja) |
| IT (1) | IT1094695B (ja) |
| NL (1) | NL181612C (ja) |
| SE (1) | SE433547B (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3017750C2 (de) * | 1980-05-09 | 1985-03-07 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor |
| NL8204878A (nl) * | 1982-12-17 | 1984-07-16 | Philips Nv | Halfgeleiderinrichting. |
| US4617471A (en) * | 1983-12-27 | 1986-10-14 | Kabushiki Kaisha Toshiba | Image sensing device |
| EP0309784A1 (de) * | 1987-09-30 | 1989-04-05 | Siemens Aktiengesellschaft | Anschlussstreifenstruktur für Bipolar-Transistoren |
| DE3802821A1 (de) * | 1988-01-30 | 1989-08-03 | Bosch Gmbh Robert | Leistungstransistor |
| DE3802767A1 (de) * | 1988-01-30 | 1989-08-10 | Bosch Gmbh Robert | Elektronisches geraet |
| FR2634948B1 (fr) * | 1988-07-29 | 1990-10-05 | Radiotechnique Compelec | Transistor de puissance a emetteur multi-cellulaires |
| DE102004046630A1 (de) * | 2004-09-25 | 2006-03-30 | Robert Bosch Gmbh | Integrierte Schaltung für gepulste Leistungsströme |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5261968A (en) * | 1975-11-18 | 1977-05-21 | Matsushita Electronics Corp | Transistor |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3358197A (en) * | 1963-05-22 | 1967-12-12 | Itt | Semiconductor device |
| US3225261A (en) * | 1963-11-19 | 1965-12-21 | Fairchild Camera Instr Co | High frequency power transistor |
| GB1081509A (en) * | 1965-04-07 | 1967-08-31 | Itt | Transistor |
| DE1539871A1 (de) * | 1966-09-26 | 1970-02-12 | Itt Ind Gmbh Deutsche | Silizium-Planartransistor |
| US3704398A (en) * | 1970-02-14 | 1972-11-28 | Nippon Electric Co | Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures |
| JPH05261968A (ja) * | 1992-01-09 | 1993-10-12 | Nec Corp | レーザプリンタ |
-
1977
- 1977-05-25 NL NLAANVRAGE7705729,A patent/NL181612C/xx not_active IP Right Cessation
-
1978
- 1978-05-18 CA CA303,661A patent/CA1097430A/en not_active Expired
- 1978-05-20 DE DE19782822166 patent/DE2822166A1/de active Granted
- 1978-05-22 SE SE7805782A patent/SE433547B/sv not_active IP Right Cessation
- 1978-05-22 GB GB21172/78A patent/GB1600638A/en not_active Expired
- 1978-05-22 IT IT23662/78A patent/IT1094695B/it active
- 1978-05-22 AU AU36351/78A patent/AU518290B2/en not_active Expired
- 1978-05-22 JP JP6009778A patent/JPS53145581A/ja active Pending
- 1978-05-22 ES ES470066A patent/ES470066A1/es not_active Expired
- 1978-05-25 FR FR7815569A patent/FR2392500A1/fr active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5261968A (en) * | 1975-11-18 | 1977-05-21 | Matsushita Electronics Corp | Transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2822166A1 (de) | 1978-11-30 |
| SE433547B (sv) | 1984-05-28 |
| SE7805782L (sv) | 1978-11-26 |
| NL181612B (nl) | 1987-04-16 |
| NL7705729A (nl) | 1978-11-28 |
| AU518290B2 (en) | 1981-09-24 |
| AU3635178A (en) | 1979-11-29 |
| IT7823662A0 (it) | 1978-05-22 |
| GB1600638A (en) | 1981-10-21 |
| FR2392500B1 (ja) | 1984-11-16 |
| DE2822166C2 (ja) | 1988-12-15 |
| FR2392500A1 (fr) | 1978-12-22 |
| CA1097430A (en) | 1981-03-10 |
| NL181612C (nl) | 1988-03-16 |
| IT1094695B (it) | 1985-08-02 |
| ES470066A1 (es) | 1979-02-01 |
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