JPS5460581A - Semiconductor - Google Patents
SemiconductorInfo
- Publication number
- JPS5460581A JPS5460581A JP11993678A JP11993678A JPS5460581A JP S5460581 A JPS5460581 A JP S5460581A JP 11993678 A JP11993678 A JP 11993678A JP 11993678 A JP11993678 A JP 11993678A JP S5460581 A JPS5460581 A JP S5460581A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/926—Elongated lead extending axially through another elongated lead
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7729477A FR2404922A1 (en) | 1977-09-30 | 1977-09-30 | PROM cells with diodes and fuses - has PN junction diode and electrically destructible element to re-form broken junction or open new junction |
FR7810208A FR2422224A1 (en) | 1978-04-06 | 1978-04-06 | PROM cells with diodes and fuses - has PN junction diode and electrically destructible element to re-form broken junction or open new junction |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5460581A true JPS5460581A (en) | 1979-05-16 |
JPS5812742B2 JPS5812742B2 (en) | 1983-03-10 |
Family
ID=26220243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53119936A Expired JPS5812742B2 (en) | 1977-09-30 | 1978-09-30 | semiconductor equipment |
Country Status (5)
Country | Link |
---|---|
US (1) | US4494135A (en) |
JP (1) | JPS5812742B2 (en) |
CA (1) | CA1135854A (en) |
DE (1) | DE2841467C2 (en) |
GB (1) | GB2005078B (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5763854A (en) * | 1980-10-07 | 1982-04-17 | Toshiba Corp | Semiconductor device |
JPS57186295A (en) * | 1981-02-23 | 1982-11-16 | Burroughs Corp | Mask type programmable read only memory to be stacked on semiconductor substrate |
JPS5831569A (en) * | 1981-08-03 | 1983-02-24 | テキサス・インスツルメンツ・インコ−ポレイテツド | Semiconductor rom array and method of producing same |
JPS5961061A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH02252187A (en) * | 1989-03-24 | 1990-10-09 | Norio Akamatsu | Storing method and storage device to execute storage according to storing method |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2490860B1 (en) * | 1980-09-24 | 1986-11-28 | Nippon Telegraph & Telephone | PROGRAMMABLE STORAGE SEMICONDUCTOR WITH ONLY READING, OF SHORT-JUNCTION TYPE |
DE3150164A1 (en) * | 1980-12-29 | 1982-08-12 | Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven | PROGRAMMABLE FIXED VALUE STORAGE AND STORAGE CELL FOR USE IN SUCH A STORAGE |
JPS5846174B2 (en) * | 1981-03-03 | 1983-10-14 | 株式会社東芝 | semiconductor integrated circuit |
DK306081A (en) * | 1981-07-10 | 1983-03-14 | Gnt Automatic As | FLOOR-BASED DIGITAL INFORMATION STORAGE AND PROCEDURES FOR READING AND CODING THE SAME |
US4518981A (en) * | 1981-11-12 | 1985-05-21 | Advanced Micro Devices, Inc. | Merged platinum silicide fuse and Schottky diode and method of manufacture thereof |
US4562639A (en) * | 1982-03-23 | 1986-01-07 | Texas Instruments Incorporated | Process for making avalanche fuse element with isolated emitter |
JPS58188155A (en) * | 1982-04-27 | 1983-11-02 | Seiko Epson Corp | Double layered rom integrated circuit |
DK143783A (en) * | 1982-06-17 | 1983-12-18 | Gnt Automatic As | DATA STORAGE |
JPS59214239A (en) * | 1983-05-16 | 1984-12-04 | Fujitsu Ltd | Manufacture of semiconductor device |
US4616404A (en) * | 1984-11-30 | 1986-10-14 | Advanced Micro Devices, Inc. | Method of making improved lateral polysilicon diode by treating plasma etched sidewalls to remove defects |
JPS6228929U (en) * | 1985-08-05 | 1987-02-21 | ||
US5266829A (en) * | 1986-05-09 | 1993-11-30 | Actel Corporation | Electrically-programmable low-impedance anti-fuse element |
US4823181A (en) * | 1986-05-09 | 1989-04-18 | Actel Corporation | Programmable low impedance anti-fuse element |
US4899205A (en) * | 1986-05-09 | 1990-02-06 | Actel Corporation | Electrically-programmable low-impedance anti-fuse element |
US4881114A (en) * | 1986-05-16 | 1989-11-14 | Actel Corporation | Selectively formable vertical diode circuit element |
US4876220A (en) * | 1986-05-16 | 1989-10-24 | Actel Corporation | Method of making programmable low impedance interconnect diode element |
US5367208A (en) * | 1986-09-19 | 1994-11-22 | Actel Corporation | Reconfigurable programmable interconnect architecture |
US5311039A (en) * | 1990-04-24 | 1994-05-10 | Seiko Epson Corporation | PROM and ROM memory cells |
US5648661A (en) * | 1992-07-02 | 1997-07-15 | Lsi Logic Corporation | Integrated circuit wafer comprising unsingulated dies, and decoder arrangement for individually testing the dies |
US5672905A (en) * | 1992-08-26 | 1997-09-30 | At&T Global Information Solutions Company | Semiconductor fuse and method |
US5963825A (en) * | 1992-08-26 | 1999-10-05 | Hyundai Electronics America | Method of fabrication of semiconductor fuse with polysilicon plate |
US6337507B1 (en) | 1995-09-29 | 2002-01-08 | Intel Corporation | Silicide agglomeration fuse device with notches to enhance programmability |
US5708291A (en) * | 1995-09-29 | 1998-01-13 | Intel Corporation | Silicide agglomeration fuse device |
DE19638666C1 (en) * | 1996-01-08 | 1997-11-20 | Siemens Ag | Fuse with a protective layer in an integrated semiconductor circuit and associated manufacturing process |
US5909049A (en) * | 1997-02-11 | 1999-06-01 | Actel Corporation | Antifuse programmed PROM cell |
US5949127A (en) | 1997-06-06 | 1999-09-07 | Integrated Device Technology, Inc. | Electrically programmable interlevel fusible link for integrated circuits |
US6385074B1 (en) | 1998-11-16 | 2002-05-07 | Matrix Semiconductor, Inc. | Integrated circuit structure including three-dimensional memory array |
US6351406B1 (en) | 1998-11-16 | 2002-02-26 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
US6034882A (en) * | 1998-11-16 | 2000-03-07 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
US6483736B2 (en) * | 1998-11-16 | 2002-11-19 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
US6323534B1 (en) | 1999-04-16 | 2001-11-27 | Micron Technology, Inc. | Fuse for use in a semiconductor device |
US6791157B1 (en) * | 2000-01-18 | 2004-09-14 | Advanced Micro Devices, Inc. | Integrated circuit package incorporating programmable elements |
US6631085B2 (en) * | 2000-04-28 | 2003-10-07 | Matrix Semiconductor, Inc. | Three-dimensional memory array incorporating serial chain diode stack |
US6888750B2 (en) * | 2000-04-28 | 2005-05-03 | Matrix Semiconductor, Inc. | Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication |
US8575719B2 (en) | 2000-04-28 | 2013-11-05 | Sandisk 3D Llc | Silicon nitride antifuse for use in diode-antifuse memory arrays |
US6323535B1 (en) * | 2000-06-16 | 2001-11-27 | Infineon Technologies North America Corp. | Electrical fuses employing reverse biasing to enhance programming |
US6624011B1 (en) | 2000-08-14 | 2003-09-23 | Matrix Semiconductor, Inc. | Thermal processing for three dimensional circuits |
CN101179079B (en) | 2000-08-14 | 2010-11-03 | 矩阵半导体公司 | Rail stack array of charge storage devices and method of making same |
US6580124B1 (en) | 2000-08-14 | 2003-06-17 | Matrix Semiconductor Inc. | Multigate semiconductor device with vertical channel current and method of fabrication |
US6661730B1 (en) | 2000-12-22 | 2003-12-09 | Matrix Semiconductor, Inc. | Partial selection of passive element memory cell sub-arrays for write operation |
US6627530B2 (en) | 2000-12-22 | 2003-09-30 | Matrix Semiconductor, Inc. | Patterning three dimensional structures |
US6545898B1 (en) | 2001-03-21 | 2003-04-08 | Silicon Valley Bank | Method and apparatus for writing memory arrays using external source of high programming voltage |
US6897514B2 (en) * | 2001-03-28 | 2005-05-24 | Matrix Semiconductor, Inc. | Two mask floating gate EEPROM and method of making |
US6593624B2 (en) | 2001-09-25 | 2003-07-15 | Matrix Semiconductor, Inc. | Thin film transistors with vertically offset drain regions |
US6525953B1 (en) | 2001-08-13 | 2003-02-25 | Matrix Semiconductor, Inc. | Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication |
US6841813B2 (en) * | 2001-08-13 | 2005-01-11 | Matrix Semiconductor, Inc. | TFT mask ROM and method for making same |
US6624485B2 (en) | 2001-11-05 | 2003-09-23 | Matrix Semiconductor, Inc. | Three-dimensional, mask-programmed read only memory |
US6853049B2 (en) | 2002-03-13 | 2005-02-08 | Matrix Semiconductor, Inc. | Silicide-silicon oxide-semiconductor antifuse device and method of making |
US6813182B2 (en) * | 2002-05-31 | 2004-11-02 | Hewlett-Packard Development Company, L.P. | Diode-and-fuse memory elements for a write-once memory comprising an anisotropic semiconductor sheet |
US6737675B2 (en) | 2002-06-27 | 2004-05-18 | Matrix Semiconductor, Inc. | High density 3D rail stack arrays |
US6661330B1 (en) * | 2002-07-23 | 2003-12-09 | Texas Instruments Incorporated | Electrical fuse for semiconductor integrated circuits |
US20070164388A1 (en) * | 2002-12-19 | 2007-07-19 | Sandisk 3D Llc | Memory cell comprising a diode fabricated in a low resistivity, programmed state |
US20060249753A1 (en) * | 2005-05-09 | 2006-11-09 | Matrix Semiconductor, Inc. | High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes |
US7177183B2 (en) | 2003-09-30 | 2007-02-13 | Sandisk 3D Llc | Multiple twin cell non-volatile memory array and logic block structure and method therefor |
US7145255B2 (en) * | 2004-08-26 | 2006-12-05 | Micrel, Incorporated | Lateral programmable polysilicon structure incorporating polysilicon blocking diode |
US20060067117A1 (en) * | 2004-09-29 | 2006-03-30 | Matrix Semiconductor, Inc. | Fuse memory cell comprising a diode, the diode serving as the fuse element |
US7486534B2 (en) * | 2005-12-08 | 2009-02-03 | Macronix International Co., Ltd. | Diode-less array for one-time programmable memory |
KR101166834B1 (en) * | 2007-06-20 | 2012-07-19 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | An electronic component, and a method of manufacturing an electronic component |
US7619295B2 (en) * | 2007-10-10 | 2009-11-17 | Fairchild Semiconductor Corporation | Pinched poly fuse |
KR101446332B1 (en) * | 2008-03-04 | 2014-10-08 | 삼성전자주식회사 | Multi bit OTP(One Time Programmable) memory device using multi plug and methods of manufacturing and operating the same |
US20090272958A1 (en) * | 2008-05-02 | 2009-11-05 | Klaus-Dieter Ufert | Resistive Memory |
US20100283053A1 (en) * | 2009-05-11 | 2010-11-11 | Sandisk 3D Llc | Nonvolatile memory array comprising silicon-based diodes fabricated at low temperature |
WO2011023922A1 (en) * | 2009-08-28 | 2011-03-03 | X-Fab Semiconductor Foundries Ag | Improved pn junctions and methods |
GB0915501D0 (en) * | 2009-09-04 | 2009-10-07 | Univ Warwick | Organic photosensitive optoelectronic devices |
JP2011216240A (en) * | 2010-03-31 | 2011-10-27 | Oki Semiconductor Co Ltd | Current fuse, semiconductor device, and method of blowing the current fuse |
KR20120139361A (en) * | 2011-06-17 | 2012-12-27 | 삼성전자주식회사 | E-fuse structure and method of operating the same |
US9627395B2 (en) | 2015-02-11 | 2017-04-18 | Sandisk Technologies Llc | Enhanced channel mobility three-dimensional memory structure and method of making thereof |
US9478495B1 (en) | 2015-10-26 | 2016-10-25 | Sandisk Technologies Llc | Three dimensional memory device containing aluminum source contact via structure and method of making thereof |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1266353B (en) * | 1964-03-13 | 1968-04-18 | Bbc Brown Boveri & Cie | Matrix-shaped arrangement of oxide layer diodes for use as manipulable read-only memory or information converter |
DE1524849A1 (en) * | 1966-09-23 | 1970-10-22 | Gen Precision Inc | Circuit arrangement for carrying out read and write operations in a magnetic memory |
US3486087A (en) * | 1967-08-30 | 1969-12-23 | Raytheon Co | Small capacity semiconductor diode |
DE1524879A1 (en) * | 1967-11-09 | 1970-11-26 | Ibm Deutschland | Read-only memory for data processing systems |
US3651385A (en) * | 1968-09-18 | 1972-03-21 | Sony Corp | Semiconductor device including a polycrystalline diode |
US3582908A (en) * | 1969-03-10 | 1971-06-01 | Bell Telephone Labor Inc | Writing a read-only memory while protecting nonselected elements |
BE755039A (en) * | 1969-09-15 | 1971-02-01 | Ibm | PERMANENT SEMI-CONDUCTOR MEMORY |
DE2015480A1 (en) * | 1970-04-01 | 1971-10-21 | Rohde & Schwarz | Method for producing a resistor or diode matrix with permanently stored information |
US3699403A (en) * | 1970-10-23 | 1972-10-17 | Rca Corp | Fusible semiconductor device including means for reducing the required fusing current |
BE794202A (en) * | 1972-01-19 | 1973-05-16 | Intel Corp | FUSE LINK FOR INTEGRATED CIRCUIT ON SEMICONDUCTOR SUBSTRATE FOR MEMORIES |
US4041518A (en) * | 1973-02-24 | 1977-08-09 | Hitachi, Ltd. | MIS semiconductor device and method of manufacturing the same |
FR2228271B1 (en) * | 1973-05-04 | 1976-11-12 | Honeywell Bull Soc Ind | |
CH581904A5 (en) * | 1974-08-29 | 1976-11-15 | Centre Electron Horloger | |
FR2404895A1 (en) * | 1977-09-30 | 1979-04-27 | Radiotechnique Compelec | PROGRAMMABLE MEMORY CELL WITH SEMICONDUCTOR DIODES |
-
1978
- 1978-09-21 CA CA000311762A patent/CA1135854A/en not_active Expired
- 1978-09-23 DE DE2841467A patent/DE2841467C2/en not_active Expired
- 1978-09-27 GB GB7838321A patent/GB2005078B/en not_active Expired
- 1978-09-30 JP JP53119936A patent/JPS5812742B2/en not_active Expired
-
1982
- 1982-09-28 US US06/425,147 patent/US4494135A/en not_active Expired - Lifetime
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5763854A (en) * | 1980-10-07 | 1982-04-17 | Toshiba Corp | Semiconductor device |
JPS57186295A (en) * | 1981-02-23 | 1982-11-16 | Burroughs Corp | Mask type programmable read only memory to be stacked on semiconductor substrate |
JPH0320904B2 (en) * | 1981-02-23 | 1991-03-20 | Unisys Corp | |
JPS5831569A (en) * | 1981-08-03 | 1983-02-24 | テキサス・インスツルメンツ・インコ−ポレイテツド | Semiconductor rom array and method of producing same |
JPH01138747A (en) * | 1981-08-03 | 1989-05-31 | Texas Instr Inc <Ti> | Polycrystalline semiconductor lateral diode |
JPH0436466B2 (en) * | 1981-08-03 | 1992-06-16 | Texas Instruments Inc | |
JPS5961061A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0454985B2 (en) * | 1982-09-30 | 1992-09-01 | Fujitsu Ltd | |
JPH02252187A (en) * | 1989-03-24 | 1990-10-09 | Norio Akamatsu | Storing method and storage device to execute storage according to storing method |
Also Published As
Publication number | Publication date |
---|---|
CA1135854A (en) | 1982-11-16 |
GB2005078A (en) | 1979-04-11 |
JPS5812742B2 (en) | 1983-03-10 |
DE2841467C2 (en) | 1984-06-14 |
US4494135A (en) | 1985-01-15 |
GB2005078B (en) | 1982-02-17 |
DE2841467A1 (en) | 1979-04-12 |
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