FR2422224A1 - PROM cells with diodes and fuses - has PN junction diode and electrically destructible element to re-form broken junction or open new junction - Google Patents

PROM cells with diodes and fuses - has PN junction diode and electrically destructible element to re-form broken junction or open new junction

Info

Publication number
FR2422224A1
FR2422224A1 FR7810208A FR7810208A FR2422224A1 FR 2422224 A1 FR2422224 A1 FR 2422224A1 FR 7810208 A FR7810208 A FR 7810208A FR 7810208 A FR7810208 A FR 7810208A FR 2422224 A1 FR2422224 A1 FR 2422224A1
Authority
FR
France
Prior art keywords
junction
fuses
diodes
diode
open new
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7810208A
Other languages
French (fr)
Other versions
FR2422224B1 (en
Inventor
Michel Moussie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7810208A priority Critical patent/FR2422224A1/en
Priority to CA000311762A priority patent/CA1135854A/en
Priority to DE2841467A priority patent/DE2841467C2/en
Priority to GB7838321A priority patent/GB2005078B/en
Priority to JP53119936A priority patent/JPS5812742B2/en
Publication of FR2422224A1 publication Critical patent/FR2422224A1/en
Application granted granted Critical
Publication of FR2422224B1 publication Critical patent/FR2422224B1/fr
Priority to US06/425,147 priority patent/US4494135A/en
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

A programmable ROM semiconductor IC includes an array of memory cells, each cell including a PN junction diode and an electrically destructible element for programming the memory. The PN junction (59) is formed between two regions (56, 57) of a thin layer of semiconductor material on an insulating layer (55) on a semiconductor substrate (41). Other circuit elements are formed within the semiconductor substrate so that a high integration density is possible. The element may be destructible by a current or voltage pulse, depending on its nature, to open an initially closed circuit, or vice-versa. The element may be another diode or a fuse.
FR7810208A 1976-04-06 1978-04-06 PROM cells with diodes and fuses - has PN junction diode and electrically destructible element to re-form broken junction or open new junction Granted FR2422224A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7810208A FR2422224A1 (en) 1978-04-06 1978-04-06 PROM cells with diodes and fuses - has PN junction diode and electrically destructible element to re-form broken junction or open new junction
CA000311762A CA1135854A (en) 1977-09-30 1978-09-21 Programmable read only memory cell
DE2841467A DE2841467C2 (en) 1977-09-30 1978-09-23 Programmable read-only memory
GB7838321A GB2005078B (en) 1977-09-30 1978-09-27 Programmable read-only memory cell
JP53119936A JPS5812742B2 (en) 1977-09-30 1978-09-30 semiconductor equipment
US06/425,147 US4494135A (en) 1976-04-06 1982-09-28 Programmable read only memory cell having an electrically destructible programmation element integrally formed with a junction diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7810208A FR2422224A1 (en) 1978-04-06 1978-04-06 PROM cells with diodes and fuses - has PN junction diode and electrically destructible element to re-form broken junction or open new junction

Publications (2)

Publication Number Publication Date
FR2422224A1 true FR2422224A1 (en) 1979-11-02
FR2422224B1 FR2422224B1 (en) 1982-01-15

Family

ID=9206765

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7810208A Granted FR2422224A1 (en) 1976-04-06 1978-04-06 PROM cells with diodes and fuses - has PN junction diode and electrically destructible element to re-form broken junction or open new junction

Country Status (1)

Country Link
FR (1) FR2422224A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3063573A1 (en) * 2017-03-01 2018-09-07 Stmicroelectronics (Rousset) Sas INTEGRATED FUSE DEVICE

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3028659A (en) * 1957-12-27 1962-04-10 Bosch Arma Corp Storage matrix
US3699395A (en) * 1970-01-02 1972-10-17 Rca Corp Semiconductor devices including fusible elements

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3028659A (en) * 1957-12-27 1962-04-10 Bosch Arma Corp Storage matrix
US3699395A (en) * 1970-01-02 1972-10-17 Rca Corp Semiconductor devices including fusible elements

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3063573A1 (en) * 2017-03-01 2018-09-07 Stmicroelectronics (Rousset) Sas INTEGRATED FUSE DEVICE
US10283648B2 (en) 2017-03-01 2019-05-07 STMicroelectronic (Rousset) SAS PN junction-based electrical fuse using reverse-bias breakdown to induce an open conduction state

Also Published As

Publication number Publication date
FR2422224B1 (en) 1982-01-15

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Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse