NL7801082A - Halfgeleiderinrichting. - Google Patents
Halfgeleiderinrichting.Info
- Publication number
- NL7801082A NL7801082A NL7801082A NL7801082A NL7801082A NL 7801082 A NL7801082 A NL 7801082A NL 7801082 A NL7801082 A NL 7801082A NL 7801082 A NL7801082 A NL 7801082A NL 7801082 A NL7801082 A NL 7801082A
- Authority
- NL
- Netherlands
- Prior art keywords
- semi
- guide device
- guide
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL9402176A NL9402176A (nl) | 1977-02-02 | 1994-12-21 | Halfgeleiderinrichting. |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1046077A JPS5396681A (en) | 1977-02-02 | 1977-02-02 | Semiconductor ic |
JP52015880A JPS5853517B2 (ja) | 1977-02-15 | 1977-02-15 | 半導体集積回路 |
JP1732777A JPS53102661A (en) | 1977-02-18 | 1977-02-18 | Semiconductor ic |
JP52019466A JPS5924549B2 (ja) | 1977-02-24 | 1977-02-24 | 半導体論理集積回路 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7801082A true NL7801082A (nl) | 1978-08-04 |
NL191525B NL191525B (nl) | 1995-04-18 |
NL191525C NL191525C (nl) | 1995-08-21 |
Family
ID=27455395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7801082A NL191525C (nl) | 1977-02-02 | 1978-01-31 | Halfgeleiderinrichting omvattende een stroomkanaalgebied van een eerste geleidingstype dat wordt omsloten door een van een stuurelektrode voorzien stuurgebied van het tweede geleidingstype. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4608582A (nl) |
DE (1) | DE2804500C2 (nl) |
FR (1) | FR2379913A1 (nl) |
GB (1) | GB1600825A (nl) |
NL (1) | NL191525C (nl) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1602984A (en) * | 1977-05-15 | 1981-11-18 | Zaidan Hojin Handotai Kenkyu | Integrated semiconductor circuit |
FR2480505A1 (fr) * | 1980-04-14 | 1981-10-16 | Thomson Csf | Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication |
JPS59119848A (ja) * | 1982-12-27 | 1984-07-11 | Fujitsu Ltd | 半導体装置の製造方法 |
IT1213171B (it) * | 1984-05-21 | 1989-12-14 | Ates Componenti Elettron | Transistore bipolare di potenza. |
JP2578600B2 (ja) * | 1987-04-28 | 1997-02-05 | オリンパス光学工業株式会社 | 半導体装置 |
US5066603A (en) * | 1989-09-06 | 1991-11-19 | Gte Laboratories Incorporated | Method of manufacturing static induction transistors |
US5126830A (en) * | 1989-10-31 | 1992-06-30 | General Electric Company | Cryogenic semiconductor power devices |
CA2056087C (en) * | 1990-11-27 | 1998-01-27 | Masakazu Morishita | Photoelectric converting device and information processing apparatus employing the same |
JP2689057B2 (ja) * | 1992-09-16 | 1997-12-10 | 本田技研工業株式会社 | 静電誘導型半導体装置 |
DE4423619A1 (de) | 1994-07-06 | 1996-01-11 | Bosch Gmbh Robert | Laterale Halbleiterstruktur zur Bildung einer temperaturkompensierten Spannungsbegrenzung |
FR2969815B1 (fr) * | 2010-12-27 | 2013-11-22 | Soitec Silicon On Insulator Tech | Procédé de fabrication d'un dispositif semi-conducteur |
TW202024628A (zh) * | 2014-12-18 | 2020-07-01 | 美商生命技術公司 | 用於使用大規模fet陣列量測分析物之方法及設備 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US29971A (en) * | 1860-09-11 | Cotton-cleaner | ||
US3409812A (en) * | 1965-11-12 | 1968-11-05 | Hughes Aircraft Co | Space-charge-limited current triode device |
JPS526076B1 (nl) * | 1971-04-28 | 1977-02-18 | ||
JPS5217720B1 (nl) * | 1971-07-31 | 1977-05-17 | ||
US3808515A (en) * | 1972-11-03 | 1974-04-30 | Bell Telephone Labor Inc | Chopper devices and circuits |
JPS5811102B2 (ja) | 1975-12-09 | 1983-03-01 | ザイダンホウジン ハンドウタイケンキユウシンコウカイ | 半導体集積回路 |
JPS608628B2 (ja) | 1976-07-05 | 1985-03-04 | ヤマハ株式会社 | 半導体集積回路装置 |
US4115797A (en) * | 1976-10-04 | 1978-09-19 | Fairchild Camera And Instrument Corporation | Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector |
-
1978
- 1978-01-31 NL NL7801082A patent/NL191525C/nl not_active IP Right Cessation
- 1978-02-01 GB GB4100/78A patent/GB1600825A/en not_active Expired
- 1978-02-02 FR FR7802938A patent/FR2379913A1/fr active Granted
- 1978-02-02 DE DE2804500A patent/DE2804500C2/de not_active Expired - Lifetime
-
1983
- 1983-07-20 US US06/515,462 patent/US4608582A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4608582A (en) | 1986-08-26 |
NL191525B (nl) | 1995-04-18 |
DE2804500C2 (de) | 1994-02-10 |
FR2379913A1 (fr) | 1978-09-01 |
DE2804500A1 (de) | 1978-08-03 |
GB1600825A (en) | 1981-10-21 |
FR2379913B1 (nl) | 1985-02-01 |
NL191525C (nl) | 1995-08-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL7806723A (nl) | Hemodialysatorinrichting. | |
NL7802260A (nl) | Halfgeleiderinrichting. | |
NO144435C (no) | Forbindelsesanordning. | |
NL7812026A (nl) | Veldeffektinrichting. | |
NL7808105A (nl) | Ladingsgekoppelde inrichting. | |
NL7801017A (nl) | Aansluitinrichting. | |
NO153149C (no) | Frigjoerbar forbindelsesanordning. | |
BE865203A (fr) | Hogedruk-kwikdampontladingslamp. | |
NL7807236A (nl) | Halfgeleiderinrichting. | |
NL7700879A (nl) | Halfgeleiderinrichting. | |
NL7805992A (nl) | Halfgeleiderinrichting. | |
NL7802222A (nl) | Halfgeleiderinrichting. | |
NL7806730A (nl) | Draaiinrichting. | |
NL7713758A (nl) | Halfgeleiderinrichting. | |
NO782252L (no) | Tuftenaalanordning. | |
NL189173C (nl) | Instelinrichting. | |
NL185750C (nl) | Computertomografische inrichting. | |
NL7801082A (nl) | Halfgeleiderinrichting. | |
NL7812462A (nl) | Halfgeleiderinrichting. | |
NL7712482A (nl) | Peilinrichting. | |
NO781237L (no) | Lokaliseringsanordning. | |
NL7705729A (nl) | Halfgeleiderinrichting. | |
IT7825723A0 (it) | Dispositivo antiriverberazione. | |
NL7806714A (nl) | Hef-kantelinrichting. | |
NO781886L (no) | Fastspenningsanordning. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V4 | Lapsed because of reaching the maximum lifetime of a patent |
Free format text: 980131 |