ES476907A1 - Un dispositivo semiconductor perfeccionado. - Google Patents

Un dispositivo semiconductor perfeccionado.

Info

Publication number
ES476907A1
ES476907A1 ES476907A ES476907A ES476907A1 ES 476907 A1 ES476907 A1 ES 476907A1 ES 476907 A ES476907 A ES 476907A ES 476907 A ES476907 A ES 476907A ES 476907 A1 ES476907 A1 ES 476907A1
Authority
ES
Spain
Prior art keywords
semiconductor device
perfected
region
conductivity
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES476907A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NLAANVRAGE7800582,A external-priority patent/NL183859C/xx
Priority claimed from NLAANVRAGE7807835,A external-priority patent/NL184552C/xx
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES476907A1 publication Critical patent/ES476907A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

Un dispositivo semiconductor perfeccionado dotado de un cuerpo semiconductor que comprende por lo menos un elemento de circuito semiconductor bipolar de alta tensión, comprendiendo dicho elemento de circuito bipolar una primera región de forma de islote, de un primer tipo de conductividad y contigua a una superficie substancialmente plano, formando dicha primera región, con una segunda región subyacente del segundo tipo de conductividad, una primera unión PN que se extiende substancialmente paralela a la superficie.
ES476907A 1978-01-18 1979-01-16 Un dispositivo semiconductor perfeccionado. Expired ES476907A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NLAANVRAGE7800582,A NL183859C (nl) 1978-01-18 1978-01-18 Halfgeleiderinrichting bevattende tenminste een halfgeleiderelement met drie opeenvolgende zones van afwisselend geleidingstype.
NLAANVRAGE7807835,A NL184552C (nl) 1978-07-24 1978-07-24 Halfgeleiderinrichting voor hoge spanningen.

Publications (1)

Publication Number Publication Date
ES476907A1 true ES476907A1 (es) 1979-05-16

Family

ID=26645384

Family Applications (1)

Application Number Title Priority Date Filing Date
ES476907A Expired ES476907A1 (es) 1978-01-18 1979-01-16 Un dispositivo semiconductor perfeccionado.

Country Status (15)

Country Link
US (1) US4292642A (es)
JP (1) JPS54109780A (es)
AT (1) AT380975B (es)
AU (1) AU518446B2 (es)
BE (1) BE873570A (es)
BR (1) BR7900229A (es)
CA (1) CA1131801A (es)
CH (1) CH638928A5 (es)
DE (1) DE2901193C2 (es)
ES (1) ES476907A1 (es)
FR (1) FR2415370A1 (es)
GB (1) GB2013029B (es)
IT (1) IT1110026B (es)
PL (1) PL116562B1 (es)
SE (1) SE432497B (es)

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NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
NL186665C (nl) * 1980-03-10 1992-01-16 Philips Nv Halfgeleiderinrichting.
DE3017313A1 (de) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
DE3029553A1 (de) * 1980-08-04 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung
NL187415C (nl) * 1980-09-08 1991-09-16 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
JPS5753977A (en) * 1980-09-17 1982-03-31 Matsushita Electronics Corp Transistor
GB2090053B (en) * 1980-12-19 1984-09-19 Philips Electronic Associated Mesfet
US4783688A (en) * 1981-12-02 1988-11-08 U.S. Philips Corporation Schottky barrier field effect transistors
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
US4942440A (en) * 1982-10-25 1990-07-17 General Electric Company High voltage semiconductor devices with reduced on-resistance
US4626879A (en) * 1982-12-21 1986-12-02 North American Philips Corporation Lateral double-diffused MOS transistor devices suitable for source-follower applications
FR2543739B1 (fr) * 1983-03-30 1986-04-18 Radiotechnique Compelec Procede de realisation d'un transistor bipolaire haute tension
GB2148589B (en) * 1983-10-18 1987-04-23 Standard Telephones Cables Ltd Improvements in intergrated circuits
US4862242A (en) * 1983-12-05 1989-08-29 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device
US4639761A (en) * 1983-12-16 1987-01-27 North American Philips Corporation Combined bipolar-field effect transistor resurf devices
US4622568A (en) * 1984-05-09 1986-11-11 Eaton Corporation Planar field-shaped bidirectional power FET
JPS61154063A (ja) * 1984-12-26 1986-07-12 Toshiba Corp 光半導体装置およびその製造方法
US4890150A (en) * 1985-12-05 1989-12-26 North American Philips Corporation Dielectric passivation
JPS63253664A (ja) * 1987-04-10 1988-10-20 Sony Corp バイポ−ラトランジスタ
US4890146A (en) * 1987-12-16 1989-12-26 Siliconix Incorporated High voltage level shift semiconductor device
DE3832732A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
DE3832709A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Thyristor
DE3832731A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
US5155568A (en) * 1989-04-14 1992-10-13 Hewlett-Packard Company High-voltage semiconductor device
JPH03235367A (ja) * 1990-02-13 1991-10-21 Mitsubishi Electric Corp 半導体集積回路装置
US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics
SE500814C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
US6831331B2 (en) 1995-11-15 2004-12-14 Denso Corporation Power MOS transistor for absorbing surge current
US6242787B1 (en) 1995-11-15 2001-06-05 Denso Corporation Semiconductor device and manufacturing method thereof
JP3547884B2 (ja) 1995-12-30 2004-07-28 三菱電機株式会社 半導体装置及びその製造方法
JP3917211B2 (ja) 1996-04-15 2007-05-23 三菱電機株式会社 半導体装置
JP3562611B2 (ja) * 1996-11-05 2004-09-08 ソニー株式会社 半導体装置及びその製造方法
SE512661C2 (sv) * 1996-11-13 2000-04-17 Ericsson Telefon Ab L M Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma
US5912501A (en) * 1997-07-18 1999-06-15 Advanced Micro Devices, Inc. Elimination of radius of curvature effects of p-n junction avalanche breakdown using slots
US6011297A (en) * 1997-07-18 2000-01-04 Advanced Micro Devices,Inc. Use of multiple slots surrounding base region of a bipolar junction transistor to increase cumulative breakdown voltage
US5859469A (en) * 1997-07-18 1999-01-12 Advanced Micro Devices, Inc. Use of tungsten filled slots as ground plane in integrated circuit structure
JP3768656B2 (ja) 1997-09-18 2006-04-19 三菱電機株式会社 半導体装置
DE10036007B4 (de) * 2000-07-25 2015-03-26 Robert Bosch Gmbh Anordnung mit einem Magnetotransistor, Verfahren zum Herstellen einer Anordnung mit einem Magnetotransistor und Verfahren zum Messen eines Magnetfeldes
JP3846796B2 (ja) * 2002-11-28 2006-11-15 三菱電機株式会社 半導体装置
JP4094984B2 (ja) * 2003-04-24 2008-06-04 三菱電機株式会社 半導体装置
JP4326835B2 (ja) 2003-05-20 2009-09-09 三菱電機株式会社 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法
JP4731816B2 (ja) * 2004-01-26 2011-07-27 三菱電機株式会社 半導体装置
JP4593126B2 (ja) * 2004-02-18 2010-12-08 三菱電機株式会社 半導体装置
JP4667756B2 (ja) * 2004-03-03 2011-04-13 三菱電機株式会社 半導体装置
JP4620437B2 (ja) * 2004-12-02 2011-01-26 三菱電機株式会社 半導体装置
US7714352B2 (en) * 2006-02-09 2010-05-11 Nissan Motor Co., Ltd. Hetero junction semiconductor device
JP4751308B2 (ja) * 2006-12-18 2011-08-17 住友電気工業株式会社 横型接合型電界効果トランジスタ
JP5191132B2 (ja) * 2007-01-29 2013-04-24 三菱電機株式会社 半導体装置
US9087713B2 (en) * 2012-10-12 2015-07-21 Power Integrations, Inc. Semiconductor device with shared region
JP6207985B2 (ja) 2013-11-21 2017-10-04 三菱電機株式会社 半導体装置およびその製造方法
DE112016007213B4 (de) 2016-09-13 2022-05-25 Mitsubishi Electric Corporation Halbleitervorrichtung
JP7407590B2 (ja) 2019-12-25 2024-01-04 三菱電機株式会社 半導体装置および集積回路

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Publication number Priority date Publication date Assignee Title
GB1073560A (en) 1964-12-28 1967-06-28 Gen Electric Improvements in semiconductor devices
US3442723A (en) * 1964-12-30 1969-05-06 Sony Corp Method of making a semiconductor junction by diffusion
NL161621C (nl) * 1968-10-16 1980-02-15 Philips Nv Halfgeleiderinrichting met veldeffecttransistor.
JPS4932028B1 (es) * 1969-06-24 1974-08-27
JPS5012665B1 (es) * 1970-05-19 1975-05-13
GB1471617A (en) * 1973-06-21 1977-04-27 Sony Corp Circuits comprising a semiconductor device
JPS50147673A (es) * 1974-05-17 1975-11-26
JPS5140881A (es) * 1974-10-04 1976-04-06 Hitachi Ltd
US4017882A (en) * 1975-12-15 1977-04-12 Rca Corporation Transistor having integrated protection
US4132996A (en) * 1976-11-08 1979-01-02 General Electric Company Electric field-controlled semiconductor device
NL184551C (nl) * 1978-07-24 1989-08-16 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.

Also Published As

Publication number Publication date
PL116562B1 (en) 1981-06-30
GB2013029A (en) 1979-08-01
CH638928A5 (de) 1983-10-14
GB2013029B (en) 1982-05-19
AU4340579A (en) 1979-07-26
SE432497B (sv) 1984-04-02
FR2415370A1 (fr) 1979-08-17
BR7900229A (pt) 1979-08-14
DE2901193C2 (de) 1982-09-30
BE873570A (fr) 1979-07-18
AU518446B2 (en) 1981-10-01
DE2901193A1 (de) 1979-07-19
ATA31179A (de) 1985-12-15
US4292642A (en) 1981-09-29
JPS54109780A (en) 1979-08-28
SE7900337L (sv) 1979-07-19
AT380975B (de) 1986-08-11
IT1110026B (it) 1985-12-23
FR2415370B1 (es) 1984-06-08
PL212822A1 (pl) 1979-09-10
CA1131801A (en) 1982-09-14
IT7919305A0 (it) 1979-01-15

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