ES364658A1 - Un dispositivo semiconductor. - Google Patents
Un dispositivo semiconductor.Info
- Publication number
- ES364658A1 ES364658A1 ES364658A ES364658A ES364658A1 ES 364658 A1 ES364658 A1 ES 364658A1 ES 364658 A ES364658 A ES 364658A ES 364658 A ES364658 A ES 364658A ES 364658 A1 ES364658 A1 ES 364658A1
- Authority
- ES
- Spain
- Prior art keywords
- diode
- layer
- conduction
- layer diode
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Electronic Switches (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71284268A | 1968-03-13 | 1968-03-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES364658A1 true ES364658A1 (es) | 1970-12-16 |
Family
ID=24863786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES364658A Expired ES364658A1 (es) | 1968-03-13 | 1969-03-12 | Un dispositivo semiconductor. |
Country Status (8)
Country | Link |
---|---|
US (1) | US3584270A (es) |
BE (1) | BE729763A (es) |
DE (1) | DE1912192A1 (es) |
ES (1) | ES364658A1 (es) |
FR (1) | FR2009809B1 (es) |
GB (1) | GB1251088A (es) |
IE (1) | IE32763B1 (es) |
SE (1) | SE389428B (es) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3727116A (en) * | 1970-05-05 | 1973-04-10 | Rca Corp | Integral thyristor-rectifier device |
GB1303337A (es) * | 1970-10-06 | 1973-01-17 | ||
US3818248A (en) * | 1971-05-24 | 1974-06-18 | Westinghouse Electric Corp | Serially connected semiconductor switching devices selectively connected for predetermined voltage blocking and rapid switching |
US3774054A (en) * | 1971-08-09 | 1973-11-20 | Westinghouse Electric Corp | Voltage variable solid state line type modulator |
DE2214187C3 (de) * | 1972-03-23 | 1978-05-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
JPS5341954B2 (es) * | 1972-06-10 | 1978-11-08 | ||
JPS4940887A (es) * | 1972-08-25 | 1974-04-17 | ||
JPS49106289A (es) * | 1973-02-09 | 1974-10-08 | ||
US3945028A (en) * | 1973-04-26 | 1976-03-16 | Westinghouse Electric Corporation | High speed, high power plasma thyristor circuit |
FR2270676B1 (es) * | 1974-02-22 | 1976-12-03 | Thomson Csf | |
US4225874A (en) * | 1978-03-09 | 1980-09-30 | Rca Corporation | Semiconductor device having integrated diode |
JPS5826834B2 (ja) * | 1979-09-28 | 1983-06-06 | 株式会社日立製作所 | 半導体レ−ザ−装置 |
GB2256744A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A monolithic semiconductor component for transient voltage suppression |
US5600160A (en) * | 1993-04-14 | 1997-02-04 | Hvistendahl; Douglas D. | Multichannel field effect device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2971139A (en) * | 1959-06-16 | 1961-02-07 | Fairchild Semiconductor | Semiconductor switching device |
US3476993A (en) * | 1959-09-08 | 1969-11-04 | Gen Electric | Five layer and junction bridging terminal switching device |
FR1280155A (fr) * | 1960-12-06 | 1961-12-29 | Fairchild Semiconductor | Dispositif de commutation à transistor |
US3264492A (en) * | 1963-08-06 | 1966-08-02 | Int Rectifier Corp | Adjustable semiconductor punchthrough device having three junctions |
CH437538A (de) * | 1965-12-22 | 1967-06-15 | Bbc Brown Boveri & Cie | Steuerbares Halbleiterelement |
-
1968
- 1968-03-13 US US712842A patent/US3584270A/en not_active Expired - Lifetime
-
1969
- 1969-02-22 IE IE263/69A patent/IE32763B1/xx unknown
- 1969-02-25 GB GB1251088D patent/GB1251088A/en not_active Expired
- 1969-03-11 DE DE19691912192 patent/DE1912192A1/de active Pending
- 1969-03-12 ES ES364658A patent/ES364658A1/es not_active Expired
- 1969-03-12 BE BE729763D patent/BE729763A/xx unknown
- 1969-03-13 FR FR6907185A patent/FR2009809B1/fr not_active Expired
- 1969-03-13 SE SE6903523A patent/SE389428B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
FR2009809B1 (es) | 1973-10-19 |
SE389428B (sv) | 1976-11-01 |
IE32763B1 (en) | 1973-11-28 |
US3584270A (en) | 1971-06-08 |
IE32763L (en) | 1969-09-13 |
DE1912192A1 (de) | 1969-10-02 |
GB1251088A (es) | 1971-10-27 |
BE729763A (es) | 1969-08-18 |
FR2009809A1 (es) | 1970-02-13 |
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