GB1102836A - Multi-junction semi-conductor elements - Google Patents

Multi-junction semi-conductor elements

Info

Publication number
GB1102836A
GB1102836A GB61766A GB61766A GB1102836A GB 1102836 A GB1102836 A GB 1102836A GB 61766 A GB61766 A GB 61766A GB 61766 A GB61766 A GB 61766A GB 1102836 A GB1102836 A GB 1102836A
Authority
GB
United Kingdom
Prior art keywords
region
junction
regions
conductor elements
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB61766A
Inventor
Gerald Whiting
William Brian Glass
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB61766A priority Critical patent/GB1102836A/en
Priority to DE19671614990 priority patent/DE1614990A1/en
Priority to NL6700081A priority patent/NL152706B/en
Priority to FR90007A priority patent/FR1507498A/en
Publication of GB1102836A publication Critical patent/GB1102836A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,102,836. Semi-conductor devices. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd. 6 Dec., 1966 [6 Jan., 1966; 22 April, 1966], Nos. 617/66 and 17710/66. Heading HiK. Ina four-layer switching diode, or an SCR, the two inner regions are arranged so that the junction between them extends to the surface of the body where it is partly defined by a zone of one of the regions having a higher conductivity than the rest of that region. As shown, Fig. 1, a four-layer diode, in which region N 1 is of lower conductivity than region P 2 , is provided with a region Nx of higher conductivity than either of regions N 1 or P 2 so that the junction between regions P 2 and Nx controls the forward breakdown voltage of the device. Region Nx may be formed simultaneously with region N 2 , and may define the whole of the periphery of junction 2.
GB61766A 1966-01-06 1966-01-06 Multi-junction semi-conductor elements Expired GB1102836A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB61766A GB1102836A (en) 1966-01-06 1966-01-06 Multi-junction semi-conductor elements
DE19671614990 DE1614990A1 (en) 1966-01-06 1967-01-03 Semiconductor switching element with several transitions and method for its production
NL6700081A NL152706B (en) 1966-01-06 1967-01-03 SEMI-CONDUCTOR DEVICE WITH AT LEAST THREE P, N TRANSITIONS.
FR90007A FR1507498A (en) 1966-01-06 1967-01-05 asymmetrically conductive element with several junctions

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB61766A GB1102836A (en) 1966-01-06 1966-01-06 Multi-junction semi-conductor elements
GB1771066 1966-05-22

Publications (1)

Publication Number Publication Date
GB1102836A true GB1102836A (en) 1968-02-14

Family

ID=26236066

Family Applications (1)

Application Number Title Priority Date Filing Date
GB61766A Expired GB1102836A (en) 1966-01-06 1966-01-06 Multi-junction semi-conductor elements

Country Status (4)

Country Link
DE (1) DE1614990A1 (en)
FR (1) FR1507498A (en)
GB (1) GB1102836A (en)
NL (1) NL152706B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0505176A1 (en) * 1991-03-22 1992-09-23 Lucas Industries Public Limited Company Breakover diode

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2549614C3 (en) * 1975-11-05 1979-05-10 Nikolai Michailovitsch Belenkov Semiconductor switch
EP0926740A3 (en) * 1997-12-23 1999-08-25 National University of Ireland, Cork A transient voltage suppressor
FR2871295B1 (en) * 2004-06-02 2006-11-24 Lite On Semiconductor Corp OVERVOLTAGE PROTECTION DEVICE AND METHOD FOR MANUFACTURING SAME

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0505176A1 (en) * 1991-03-22 1992-09-23 Lucas Industries Public Limited Company Breakover diode

Also Published As

Publication number Publication date
NL6700081A (en) 1967-07-07
FR1507498A (en) 1967-12-29
DE1614990A1 (en) 1971-01-14
NL152706B (en) 1977-03-15

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