GB1102197A - Semi-conductor elements - Google Patents

Semi-conductor elements

Info

Publication number
GB1102197A
GB1102197A GB188566A GB188566A GB1102197A GB 1102197 A GB1102197 A GB 1102197A GB 188566 A GB188566 A GB 188566A GB 188566 A GB188566 A GB 188566A GB 1102197 A GB1102197 A GB 1102197A
Authority
GB
United Kingdom
Prior art keywords
region
junction
contact
semi
periphery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB188566A
Inventor
Gerald Whiting
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB323119A priority Critical patent/GB140166A/en
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB188566A priority patent/GB1102197A/en
Priority to NL6618470A priority patent/NL6618470A/xx
Priority to FR90378A priority patent/FR1507649A/en
Priority to DE19671614991 priority patent/DE1614991A1/en
Publication of GB1102197A publication Critical patent/GB1102197A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2893/00—Discharge tubes and lamps
    • H01J2893/0001—Electrodes and electrode systems suitable for discharge tubes or lamps
    • H01J2893/0012—Constructional arrangements
    • H01J2893/0013—Sealed electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,102,197. Semi-conductor devices. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd. 6 Dec., 1966 [14 Jan., 1966], No. 1885/66. Heading HlK. In a semi-conductor device 1 having first and second regions 2, 3 of opposite conductivity type, a contact 11 is provided, spaced from the periphery 7 of the junction 4 between the regions 2, 3 and extending along its peripheral length, the contact 11 being isolated from the surface 5 of the region 2 by an insulating layer 10; e.g. an oxide layer. When a potential is applied to the contact 11 an inversion zone 14, of the same conductivity type as the second region 3, is generated in the first region 2. The depletion region 15 of the junction between the region 2 and zone 14 merges with the depletion region 13 associated with the junction 4, thereby preventing surface breakdown of the junction 4 at its periphery 7. The potential applied to the contact 11, which may be annular in shape, may be the same as or different to that applied to the contact 3 attached to the second region 3. Two separate concentric contacts 11 may be provided, and in an alternative form the contacts 11 are applied to the opposite face to that on which the periphery 7 of the junction 4 emerges, the depletion regions merging across the crystal thickness. The invention may also be applied to a PNPN rectifier.
GB188566A 1919-02-10 1966-01-14 Semi-conductor elements Expired GB1102197A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB323119A GB140166A (en) 1919-02-10 1919-02-10 Improvements in and relating to electrodes for vacuum discharge devices
GB188566A GB1102197A (en) 1966-01-14 1966-01-14 Semi-conductor elements
NL6618470A NL6618470A (en) 1966-01-14 1966-12-30
FR90378A FR1507649A (en) 1966-01-14 1967-01-09 asymmetric conductivity element
DE19671614991 DE1614991A1 (en) 1966-01-14 1967-01-10 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB188566A GB1102197A (en) 1966-01-14 1966-01-14 Semi-conductor elements

Publications (1)

Publication Number Publication Date
GB1102197A true GB1102197A (en) 1968-02-07

Family

ID=9729772

Family Applications (1)

Application Number Title Priority Date Filing Date
GB188566A Expired GB1102197A (en) 1919-02-10 1966-01-14 Semi-conductor elements

Country Status (4)

Country Link
DE (1) DE1614991A1 (en)
FR (1) FR1507649A (en)
GB (1) GB1102197A (en)
NL (1) NL6618470A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4921984B1 (en) * 1969-05-28 1974-06-05
DE3227536A1 (en) * 1982-01-20 1983-07-28 Robert Bosch Gmbh, 7000 Stuttgart DARLINGTON TRANSISTOR CIRCUIT
CH670172A5 (en) * 1986-05-30 1989-05-12 Bbc Brown Boveri & Cie

Also Published As

Publication number Publication date
NL6618470A (en) 1967-07-17
FR1507649A (en) 1967-12-29
DE1614991A1 (en) 1971-01-21

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