FR1507498A - asymmetrically conductive element with several junctions - Google Patents

asymmetrically conductive element with several junctions

Info

Publication number
FR1507498A
FR1507498A FR90007A FR90007A FR1507498A FR 1507498 A FR1507498 A FR 1507498A FR 90007 A FR90007 A FR 90007A FR 90007 A FR90007 A FR 90007A FR 1507498 A FR1507498 A FR 1507498A
Authority
FR
France
Prior art keywords
conductive element
asymmetrically conductive
several junctions
junctions
several
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR90007A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Application granted granted Critical
Publication of FR1507498A publication Critical patent/FR1507498A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
FR90007A 1966-01-06 1967-01-05 asymmetrically conductive element with several junctions Expired FR1507498A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB61766A GB1102836A (en) 1966-01-06 1966-01-06 Multi-junction semi-conductor elements
GB1771066 1966-05-22

Publications (1)

Publication Number Publication Date
FR1507498A true FR1507498A (en) 1967-12-29

Family

ID=26236066

Family Applications (1)

Application Number Title Priority Date Filing Date
FR90007A Expired FR1507498A (en) 1966-01-06 1967-01-05 asymmetrically conductive element with several junctions

Country Status (4)

Country Link
DE (1) DE1614990A1 (en)
FR (1) FR1507498A (en)
GB (1) GB1102836A (en)
NL (1) NL152706B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2871295A1 (en) * 2004-06-02 2005-12-09 Lite On Semiconductor Corp Over voltage protection device manufacturing method for e.g. thyristor, involves forming voltage limitation region, inside one region defined by masking blocks, parallel to central junction for defining breakdown voltage and trigger current

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2549614C3 (en) * 1975-11-05 1979-05-10 Nikolai Michailovitsch Belenkov Semiconductor switch
GB9106205D0 (en) * 1991-03-22 1991-05-08 Lucas Ind Plc Breakover diode
EP0926740A3 (en) * 1997-12-23 1999-08-25 National University of Ireland, Cork A transient voltage suppressor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2871295A1 (en) * 2004-06-02 2005-12-09 Lite On Semiconductor Corp Over voltage protection device manufacturing method for e.g. thyristor, involves forming voltage limitation region, inside one region defined by masking blocks, parallel to central junction for defining breakdown voltage and trigger current

Also Published As

Publication number Publication date
DE1614990A1 (en) 1971-01-14
GB1102836A (en) 1968-02-14
NL152706B (en) 1977-03-15
NL6700081A (en) 1967-07-07

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