SE7909541L - Optiskt akriverbar halvledarkomponent - Google Patents

Optiskt akriverbar halvledarkomponent

Info

Publication number
SE7909541L
SE7909541L SE7909541A SE7909541A SE7909541L SE 7909541 L SE7909541 L SE 7909541L SE 7909541 A SE7909541 A SE 7909541A SE 7909541 A SE7909541 A SE 7909541A SE 7909541 L SE7909541 L SE 7909541L
Authority
SE
Sweden
Prior art keywords
light
sensitive
semiconductor component
sensitive surface
optically acceptable
Prior art date
Application number
SE7909541A
Other languages
English (en)
Inventor
A Jaecklin
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Publication of SE7909541L publication Critical patent/SE7909541L/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
SE7909541A 1978-11-24 1979-11-19 Optiskt akriverbar halvledarkomponent SE7909541L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1204878 1978-11-24

Publications (1)

Publication Number Publication Date
SE7909541L true SE7909541L (sv) 1980-05-25

Family

ID=4379359

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7909541A SE7909541L (sv) 1978-11-24 1979-11-19 Optiskt akriverbar halvledarkomponent

Country Status (7)

Country Link
US (1) US4366496A (sv)
JP (1) JPS5572085A (sv)
DE (1) DE2853292A1 (sv)
FR (1) FR2442510A1 (sv)
GB (1) GB2036430B (sv)
NL (1) NL7908500A (sv)
SE (1) SE7909541L (sv)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134469A (ja) * 1982-02-05 1983-08-10 Matsushita Electronics Corp プレ−ナ形光サイリスタ
JPH0648575Y2 (ja) * 1988-09-13 1994-12-12 パイオニア株式会社 光検出器
JPH03120877A (ja) * 1989-10-04 1991-05-23 Sumitomo Electric Ind Ltd 受光素子
US5113076A (en) * 1989-12-19 1992-05-12 Santa Barbara Research Center Two terminal multi-band infrared radiation detector
US5757065A (en) * 1996-10-04 1998-05-26 Xerox Corporation High voltage integrated circuit diode with a charge injecting node

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch
US3943550A (en) * 1973-12-24 1976-03-09 Hitachi, Ltd. Light-activated semiconductor-controlled rectifier
CH567803A5 (sv) * 1974-01-18 1975-10-15 Bbc Brown Boveri & Cie
JPS50151077A (sv) * 1974-05-23 1975-12-04
JPS5143685A (ja) * 1974-10-14 1976-04-14 Hitachi Ltd Handotaijukosochi
JPS5295990A (en) * 1976-02-09 1977-08-12 Hitachi Ltd Photo receiver of semiconductor
CH614811A5 (en) * 1977-04-15 1979-12-14 Bbc Brown Boveri & Cie Thyristor
CH594984A5 (sv) * 1976-06-02 1978-01-31 Bbc Brown Boveri & Cie
SU793421A3 (ru) * 1976-06-02 1980-12-30 Ббц Аг Браун Фототиристор
DE2739182A1 (de) * 1977-08-31 1979-03-15 Licentia Gmbh Steuerbarer halbleitergleichrichter mit mindestens vier schichten unterschiedlicher leitfaehigkeit
US4186409A (en) * 1978-08-11 1980-01-29 Westinghouse Electric Corp. Light activated silicon switch

Also Published As

Publication number Publication date
GB2036430B (en) 1983-07-27
US4366496A (en) 1982-12-28
DE2853292C2 (sv) 1992-09-10
JPS5572085A (en) 1980-05-30
FR2442510A1 (fr) 1980-06-20
FR2442510B1 (sv) 1983-07-29
DE2853292A1 (de) 1980-06-12
GB2036430A (en) 1980-06-25
NL7908500A (nl) 1980-05-28

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