ES410393A1 - Disposicion de circuito integrado. - Google Patents

Disposicion de circuito integrado.

Info

Publication number
ES410393A1
ES410393A1 ES410393A ES410393A ES410393A1 ES 410393 A1 ES410393 A1 ES 410393A1 ES 410393 A ES410393 A ES 410393A ES 410393 A ES410393 A ES 410393A ES 410393 A1 ES410393 A1 ES 410393A1
Authority
ES
Spain
Prior art keywords
integrated circuit
current injector
supply polarity
independent current
polarity independent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES410393A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES410393A1 publication Critical patent/ES410393A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Rectifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

Disposición de circuito integrado que comprende un elemento semiconductor y medios para asegurar automáticamente la polaridad de alimentación adecuada que comprende dos rectificadores conectados entre una zona de substrato del elemento semiconductor y dos terminales de alimentación , caracterizada porque los mencionados rectificadores forman parte de un punete rectificador cuyas uniones p-n que están formadas con la zona de substrato y están incluidas en otros dos brazos del puente, forman parte de un inyector de corriente que suministra corriente a elementos de circuito adicionales del circuito integrado.
ES410393A 1972-01-08 1973-01-05 Disposicion de circuito integrado. Expired ES410393A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7200294A NL7200294A (es) 1972-01-08 1972-01-08

Publications (1)

Publication Number Publication Date
ES410393A1 true ES410393A1 (es) 1975-12-01

Family

ID=19815114

Family Applications (1)

Application Number Title Priority Date Filing Date
ES410393A Expired ES410393A1 (es) 1972-01-08 1973-01-05 Disposicion de circuito integrado.

Country Status (9)

Country Link
US (1) US3829718A (es)
JP (1) JPS5147593B2 (es)
CA (1) CA966586A (es)
DE (1) DE2262007C2 (es)
ES (1) ES410393A1 (es)
FR (1) FR2167793B1 (es)
GB (1) GB1413371A (es)
IT (1) IT978033B (es)
NL (1) NL7200294A (es)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2344244C3 (de) * 1973-09-01 1982-11-25 Robert Bosch Gmbh, 7000 Stuttgart Laterale Transistorstruktur
GB1492589A (en) * 1974-11-21 1977-11-23 Texas Instruments Ltd Logic gate employing multi-emitter transistors
DE2509530C2 (de) * 1975-03-05 1985-05-23 Ibm Deutschland Gmbh, 7000 Stuttgart Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren
DE2652103C2 (de) * 1976-11-16 1982-10-28 Ibm Deutschland Gmbh, 7000 Stuttgart Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung
GB2034555B (en) * 1978-11-08 1983-03-02 Standard Telephones Cables Ltd Bridge amplifier
US4345166A (en) * 1979-09-28 1982-08-17 Motorola, Inc. Current source having saturation protection
US4558286A (en) * 1982-04-26 1985-12-10 Motorola, Inc. Symmetrical diode clamp
JPS62128521U (es) * 1986-02-03 1987-08-14
JPS6338448A (ja) * 1986-07-31 1988-02-19 株式会社ハクキン カイロ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3541357A (en) * 1968-04-29 1970-11-17 Gen Electric Integrated circuit for alternating current operation
US3509446A (en) * 1968-05-31 1970-04-28 Gen Electric Full-wave rectifying monolithic integrated circuit

Also Published As

Publication number Publication date
DE2262007C2 (de) 1981-09-24
FR2167793A1 (es) 1973-08-24
US3829718A (en) 1974-08-13
NL7200294A (es) 1973-07-10
JPS4881491A (es) 1973-10-31
IT978033B (it) 1974-09-20
CA966586A (en) 1975-04-22
JPS5147593B2 (es) 1976-12-15
DE2262007A1 (de) 1973-07-26
GB1413371A (en) 1975-11-12
FR2167793B1 (es) 1977-09-02

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