ES243081A1 - Mejoras introducidas en los elementos de circuito - Google Patents

Mejoras introducidas en los elementos de circuito

Info

Publication number
ES243081A1
ES243081A1 ES0243081A ES243081A ES243081A1 ES 243081 A1 ES243081 A1 ES 243081A1 ES 0243081 A ES0243081 A ES 0243081A ES 243081 A ES243081 A ES 243081A ES 243081 A1 ES243081 A1 ES 243081A1
Authority
ES
Spain
Prior art keywords
circuit element
rectifying circuit
semiconductor
zone consisting
electret
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0243081A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES243081A1 publication Critical patent/ES243081A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/10—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Ceramic Engineering (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Catching Or Destruction (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Memories (AREA)
  • Elimination Of Static Electricity (AREA)

Abstract

Mejoras introducidas en los elementos de circuito que comprenden un cuerpo en el cual una zona que consiste de un semiconductor es adyacente a una zona que consiste de un electreto, estando provistos medios usualmente contactos sobre el cuerpo para aplicar una diferencia de potencial eléctrico a la juntura entre el electro y el semiconductor.
ES0243081A 1957-07-15 1958-07-12 Mejoras introducidas en los elementos de circuito Expired ES243081A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL218993 1957-07-15

Publications (1)

Publication Number Publication Date
ES243081A1 true ES243081A1 (es) 1959-05-01

Family

ID=19750931

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0243081A Expired ES243081A1 (es) 1957-07-15 1958-07-12 Mejoras introducidas en los elementos de circuito

Country Status (8)

Country Link
US (1) US3015770A (es)
BE (1) BE569425A (es)
CH (1) CH373470A (es)
DE (1) DE1100817B (es)
ES (1) ES243081A1 (es)
FR (1) FR1212785A (es)
GB (1) GB897992A (es)
NL (2) NL107314C (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3204159A (en) * 1960-09-14 1965-08-31 Bramley Jenny Rectifying majority carrier device
US3222530A (en) * 1961-06-07 1965-12-07 Philco Corp Ultra-sensitive photo-transistor device comprising wafer having high resistivity center region with opposite conductivity, diffused, low-resistivity, and translucent outer layers
NL280435A (es) * 1962-07-02
US4053309A (en) * 1974-06-10 1977-10-11 Varian Associates, Inc. Electrophotographic imaging method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2796564A (en) * 1953-12-21 1957-06-18 Sylvania Electric Prod Electric circuit element
NL202404A (es) * 1955-02-18
US2791761A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Electrical switching and storage
US2791759A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive device

Also Published As

Publication number Publication date
FR1212785A (fr) 1960-03-25
NL107314C (es) 1964-02-17
DE1100817B (de) 1961-03-02
CH373470A (de) 1963-11-30
GB897992A (en) 1962-06-06
US3015770A (en) 1962-01-02
NL218993A (es)
BE569425A (es)

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