GB1073560A - Improvements in semiconductor devices - Google Patents

Improvements in semiconductor devices

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Publication number
GB1073560A
GB1073560A GB50698/65A GB5069865A GB1073560A GB 1073560 A GB1073560 A GB 1073560A GB 50698/65 A GB50698/65 A GB 50698/65A GB 5069865 A GB5069865 A GB 5069865A GB 1073560 A GB1073560 A GB 1073560A
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GB
United Kingdom
Prior art keywords
region
wafer
surface region
enclosed
stopper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB50698/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB1073560A publication Critical patent/GB1073560A/en
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
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    • H01L29/0821—Collector regions of bipolar transistors
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
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    • H01L29/1004—Base region of bipolar transistors
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    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
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    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/1016—Anode base regions of thyristors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,073,560. Semi-conductor devices. GENERAL ELECTRIC CO. Nov. 30, 1965 [Dec. 28, 1964], No. 50698/65. Heading H1K. The surface breakdown voltage of a junction (15) is increased by surrounding an enclosed region (16) with a surface region (17) of the same conductivity type but having a lower conductivity, Fig. 1 (not shown). The lower conductivity surface region may be surrounded by a further region (26) of even lower conductivity, Fig. 2 (not shown). The surface region may extend to the periphery of the wafer, Fig. 3 (not shown), and the major portion may be etched away to leave a mesa structure. Fig. 4 (not shown). In a mesa-type diode the surface region may extend over the etched surface, Fig. 5 (not shown). The extent of the surface region may be limited by a heavily doped "stopper" region (43) of the same conductivity type as the main part of the wafer, Fig. 6 (not shown), and this "stopper" region may extend over the sides and lower face of the wafer, Fig. 7 (not shown). A transistor may be produced by diffusing an emitter region into the enclosed region, Fig. 8 (not shown), or both emitter and collector regions may be formed integrally with a surface region which extends over the whole of the surface of the wafer and separating them by means of a heavily doped stopper region which also provides access to the base region, Fig. 9 (not shown). One or more of the regions of an SCR may be surrounded by a surface region and the emitter junction may be partially short-circuited, Fig. 10 (not shown), and the edge of the wafer may be bevelled, Fig. 11 (not shown). The enclosed surface regions may be formed by masking the surface of the wafer with a layer of silicon dioxide and diffusing-in the impurity through a window to form the highly doped enclosed region and simultaneously diffusing-in the impurity through the bulk of the oxide to form the lightly doped surface region. The semi-conductor material may be silicon or germanium and the impurities may be a phosphorus, boron, or gallium. In all the embodiments at least part of the oxide mask is left on the device to provide a passivation layer.
GB50698/65A 1964-12-28 1965-11-30 Improvements in semiconductor devices Expired GB1073560A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42138064A 1964-12-28 1964-12-28

Publications (1)

Publication Number Publication Date
GB1073560A true GB1073560A (en) 1967-06-28

Family

ID=23670282

Family Applications (1)

Application Number Title Priority Date Filing Date
GB50698/65A Expired GB1073560A (en) 1964-12-28 1965-11-30 Improvements in semiconductor devices

Country Status (4)

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DE (1) DE1934208U (en)
ES (1) ES321146A1 (en)
FR (1) FR1463247A (en)
GB (1) GB1073560A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017882A (en) * 1975-12-15 1977-04-12 Rca Corporation Transistor having integrated protection
US4292646A (en) * 1977-01-07 1981-09-29 Rca Corporation Semiconductor thyristor device having integral ballast means
GB2163597A (en) * 1984-08-21 1986-02-26 Ates Componenti Elettron Improvements in or relating to manufacture of semiconductor devices of high breakdown voltage
GB2247779A (en) * 1990-09-05 1992-03-11 Samsung Electronics Co Ltd Semiconductor device tolerant of electrostatic discharge
US5424563A (en) * 1993-12-27 1995-06-13 Harris Corporation Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242690A (en) * 1978-06-06 1980-12-30 General Electric Company High breakdown voltage semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017882A (en) * 1975-12-15 1977-04-12 Rca Corporation Transistor having integrated protection
US4292646A (en) * 1977-01-07 1981-09-29 Rca Corporation Semiconductor thyristor device having integral ballast means
GB2163597A (en) * 1984-08-21 1986-02-26 Ates Componenti Elettron Improvements in or relating to manufacture of semiconductor devices of high breakdown voltage
GB2247779A (en) * 1990-09-05 1992-03-11 Samsung Electronics Co Ltd Semiconductor device tolerant of electrostatic discharge
US5424563A (en) * 1993-12-27 1995-06-13 Harris Corporation Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices

Also Published As

Publication number Publication date
ES321146A1 (en) 1966-09-01
DE1934208U (en) 1966-03-10
FR1463247A (en) 1966-06-03

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