JP4593126B2 - 半導体装置 - Google Patents
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- JP4593126B2 JP4593126B2 JP2004041009A JP2004041009A JP4593126B2 JP 4593126 B2 JP4593126 B2 JP 4593126B2 JP 2004041009 A JP2004041009 A JP 2004041009A JP 2004041009 A JP2004041009 A JP 2004041009A JP 4593126 B2 JP4593126 B2 JP 4593126B2
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- 239000004065 semiconductor Substances 0.000 title claims description 394
- 239000012535 impurity Substances 0.000 claims description 164
- 238000001514 detection method Methods 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 40
- 239000003990 capacitor Substances 0.000 description 34
- 238000000034 method Methods 0.000 description 22
- 230000003071 parasitic effect Effects 0.000 description 21
- 230000008569 process Effects 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000003321 amplification Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Description
前記第1埋め込み不純物領域の上方で前記第1島領域に形成された、前記第1電位が印加される半導体素子と、前記第2島領域の上面内に、前記第1不純物領域と離れて設けられた、前記第2電位が印加される前記p型の第2不純物領域と、前記第2不純物領域の下方であって、前記第2島領域と前記半導体基板との界面に設けられた、前記半導体層よりも不純物濃度が高い前記n型の第2埋め込み不純物領域とを備え、前記第1島領域には容量素子が電気的に接続され、平面視上において、前記第1島領域と前記接続領域とが並ぶ方向に対して垂直方向の前記接続領域の幅は、前記第1島領域のそれよりも小さい。
図1は本発明の実施の形態1に係る半導体装置の等価回路及びその周辺回路を示す図である。本実施の形態1に係る半導体装置はHVICであって、後述する高電位島領域101に形成されたロジック回路103と、当該ロジック回路103にソースが接続されたnチャネル形のJFET(ジャンクションFET)102とを備えている。JFET102のソースは、例えばロジック回路103のプラス電源端子に接続されている。
図10〜12は本発明の実施の形態2に係る半導体装置の構造を示す断面図である。図10〜12はそれぞれ図2中の矢視A−A〜C−Cに相当する断面図である。本実施の形態2に係る半導体装置は、上述の実施の形態1に係る半導体装置において、基本的にはp+埋め込み不純物領域50を更に設けたものである。
図13は本発明の実施の形態3に係る半導体装置の構造を模式的に示す平面図であり、図14は図13中の矢視D−Dにおける断面図である。本実施の形態3に係る半導体装置は、上述の実施の形態1に係る半導体装置において、スリット領域105を複数設けたものである。
図16は本発明の実施の形態4に係る半導体装置の構造を模式的に示す平面図であり、図17は図16中の矢視E−Eにおける断面図である。本実施の形態4に係る半導体装置は、上述の実施の形態3に係る半導体装置において、基本的には低電位島領域104を複数に分割したものである。
図18は本発明の実施の形態5に係る半導体装置の構造を模式的に示す平面図であって、図19〜21は図18中の矢視F−F〜H−Hにおける断面図をそれぞれ示している。本実施の形態5に係る半導体装置は、上述の実施の形態1に係る半導体装置において、基本的にはゲート電極60及びゲート絶縁膜61を更に設けたものである。
図23は本発明の実施の形態6に係る半導体装置の構造を模式的に示す平面図であって、図24は図23中の矢視I−Iにおける断面図である。本実施の形態6に係る半導体装置は、上述の実施の形態3に係る半導体装置において、基本的には、スリット領域105ごとに上記ゲート電極60及びゲート絶縁膜61を更に設けたものである。
図25は本発明の実施の形態7に係る半導体装置の構造を模式的に示す平面図であって、図26〜28は図25中の矢視J−J〜L−Lにおける断面図をそれぞれ示している。本実施の形態7に係る半導体装置は、上述の実施の形態1に係る半導体装置において、n+不純物領域6の代わりにp+不純物領域70を設けて、更にn+埋め込み不純物領域71を設けたものである。
図31は本発明の実施の形態8に係る半導体装置の構造を模式的に示す平面図である。本実施の形態8に係る半導体装置は、上述の実施の形態4において、基本的には、スリット領域105と分割領域104aとから成る組を2組だけ設けて、その一方の組の分割領域104aにおけるn-半導体層3と電気的に接続された検出回路80をスイッチ回路SWの代わりに設けたものである。
図33は本発明の実施の形態9に係る半導体装置の構造を模式的に示す平面図である。本実施の形態9に係る半導体装置は、上述の実施の形態8において、検出回路80の替わりに検出回路81を設けたものである。
Claims (11)
- p型の半導体基板と、
前記半導体基板上に形成されたn型の半導体層と、
前記半導体層のうち第1電位が印加される半導体素子が形成される部分である第1島領域と、前記半導体層のうち前記第1電位よりも低い第2電位が印加される部分である第2島領域と、前記半導体層のうち当該第1及び第2島領域を互いに接続する部分である接続領域とを前記半導体層内に区分するように、前記半導体層の上面から前記半導体基板との界面にかけて前記半導体層内に形成された、前記半導体層よりも不純物濃度が高い前記p型の第1不純物領域と、
前記第1島領域と前記半導体基板との界面に形成された、前記半導体層よりも不純物濃度が高い前記n型の第1埋め込み不純物領域と、
前記第1埋め込み不純物領域の上方で前記第1島領域に形成された、前記第1電位が印加される半導体素子と
を備え、
前記第1島領域には容量素子が電気的に接続され、
平面視上において、前記第1島領域と前記接続領域とが並ぶ方向に対して垂直方向の前記接続領域の幅は、前記第1島領域のそれよりも小さい、半導体装置。 - 前記接続領域と前記半導体基板との界面に前記第1不純物領域と接続されて設けられた、前記半導体層よりも不純物濃度が高い前記p型の第2埋め込み不純物領域を更に備える、請求項1及び請求項2のいずれか一つに記載の半導体装置。
- 前記第1不純物領域は、前記接続領域を前記半導体層内に複数区分する、請求項1乃至請求項3のいずれか一つに記載の半導体装置。
- 前記第2島領域は複数の分割領域から成り、
前記複数の分割領域は、前記接続領域と一対一で接続されている、請求項4に記載の半導体装置。 - 前記接続領域上に設けられた絶縁膜と、
前記絶縁膜上に設けられた導電膜と
を更に備える、請求項1乃至請求項3のいずれか一つに記載の半導体装置。 - 各前記接続領域上に設けられた絶縁膜と、
前記接続領域と一対一で対応して前記絶縁膜上に設けられた複数の導電膜と
を更に備える、請求項4及び請求項5のいずれか一つに記載の半導体装置。 - p型の半導体基板と、
前記半導体基板上に形成されたn型の半導体層と、
前記半導体層のうち第1電位が印加される半導体素子が形成される部分である第1島領域と、前記半導体層のうち前記第1電位よりも低い第2電位が印加される部分である第2島領域と、前記半導体層のうち当該第1及び第2島領域を互いに接続する部分である接続領域とを前記半導体層内に区分するように、前記半導体層の上面から前記半導体基板との界面にかけて前記半導体層内に形成された、前記半導体層よりも不純物濃度が高い前記p型の第1不純物領域と、
前記第1島領域と前記半導体基板との界面に形成された、前記半導体層よりも不純物濃度が高い前記n型の第1埋め込み不純物領域と、
前記第1埋め込み不純物領域の上方で前記第1島領域に形成された、前記第1電位が印加される半導体素子と、
前記第2島領域の上面内に、前記第1不純物領域と離れて設けられた、前記第2電位が印加される前記p型の第2不純物領域と、
前記第2不純物領域の下方であって、前記第2島領域と前記半導体基板との界面に設けられた、前記半導体層よりも不純物濃度が高い前記n型の第2埋め込み不純物領域と
を備え、
前記第1島領域には容量素子が電気的に接続され、
平面視上において、前記第1島領域と前記接続領域とが並ぶ方向に対して垂直方向の前記接続領域の幅は、前記第1島領域のそれよりも小さい、半導体装置。 - 前記第1不純物領域は、前記半導体層の一部である第3島領域と、前記半導体層のうち当該第3島領域と前記第1島領域とを接続する部分である第2接続領域とを前記半導体層内に更に区分し、
平面視上において、前記第1島領域と前記第2接続領域とが並ぶ方向に対して垂直方向の前記第2接続領域の幅は、前記第1島領域のそれよりも小さく、
前記第3島領域の電位を検出する検出回路を更に備える、請求項1乃至請求項8のいずれか一つに記載の半導体装置。 - 前記検出回路は、前記第3島領域の電位が正電位のしきい値電位より大きくなると検出信号を出力する、請求項9に記載の半導体装置。
- 前記検出回路は、前記第3島領域の電位が負電位のしきい値電位より小さくなると検出信号を出力する、請求項9に記載の半導体装置。
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JP2004041009A JP4593126B2 (ja) | 2004-02-18 | 2004-02-18 | 半導体装置 |
TW093123338A TWI249811B (en) | 2004-02-18 | 2004-08-04 | Semiconductor device |
US10/919,405 US7741695B2 (en) | 2004-02-18 | 2004-08-17 | Semiconductor device |
IT000595A ITTO20040595A1 (it) | 2004-02-18 | 2004-09-09 | Dispositivo a semiconduttore |
CNB2004100786326A CN100352058C (zh) | 2004-02-18 | 2004-09-14 | 半导体器件 |
DE102004059627A DE102004059627B4 (de) | 2004-02-18 | 2004-12-10 | Halbleitervorrichtung mit einem Hochpotentialinselbereich |
KR1020040104733A KR100589708B1 (ko) | 2004-02-18 | 2004-12-13 | 반도체장치 |
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JP2004041009A JP4593126B2 (ja) | 2004-02-18 | 2004-02-18 | 半導体装置 |
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JP2005235892A5 JP2005235892A5 (ja) | 2006-08-31 |
JP4593126B2 true JP4593126B2 (ja) | 2010-12-08 |
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US (1) | US7741695B2 (ja) |
JP (1) | JP4593126B2 (ja) |
KR (1) | KR100589708B1 (ja) |
CN (1) | CN100352058C (ja) |
DE (1) | DE102004059627B4 (ja) |
IT (1) | ITTO20040595A1 (ja) |
TW (1) | TWI249811B (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP4832841B2 (ja) * | 2005-09-22 | 2011-12-07 | 三菱電機株式会社 | 半導体装置 |
US7642617B2 (en) * | 2005-09-28 | 2010-01-05 | Agere Systems Inc. | Integrated circuit with depletion mode JFET |
JP4783652B2 (ja) * | 2006-03-20 | 2011-09-28 | 株式会社リコー | 高効率電源回路および該高効率電源回路を組み込んだ電子機器 |
US8445947B2 (en) * | 2008-07-04 | 2013-05-21 | Stmicroelectronics (Rousset) Sas | Electronic circuit having a diode-connected MOS transistor with an improved efficiency |
JP5136544B2 (ja) * | 2009-12-16 | 2013-02-06 | 三菱電機株式会社 | 半導体装置 |
US8618627B2 (en) * | 2010-06-24 | 2013-12-31 | Fairchild Semiconductor Corporation | Shielded level shift transistor |
JP5719627B2 (ja) * | 2011-02-22 | 2015-05-20 | ローム株式会社 | 地絡保護回路及びこれを用いたスイッチ駆動装置 |
JP5550681B2 (ja) * | 2012-06-19 | 2014-07-16 | 三菱電機株式会社 | 半導体装置 |
JP5996969B2 (ja) * | 2012-08-24 | 2016-09-21 | 新電元工業株式会社 | 高耐圧半導体装置 |
JP5947151B2 (ja) * | 2012-08-24 | 2016-07-06 | 新電元工業株式会社 | 高耐圧半導体装置 |
JP6319761B2 (ja) * | 2013-06-25 | 2018-05-09 | ローム株式会社 | 半導体装置 |
CN104426359B (zh) * | 2013-09-06 | 2018-07-06 | 上海宝芯源功率半导体有限公司 | 一种集成结型场效应晶体管的自举电路及自举方法 |
JP6228428B2 (ja) * | 2013-10-30 | 2017-11-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN105824160B (zh) * | 2015-01-08 | 2020-06-16 | 群创光电股份有限公司 | 显示面板 |
JP6686721B2 (ja) * | 2016-06-15 | 2020-04-22 | 富士電機株式会社 | 半導体集積回路装置 |
JP6729487B2 (ja) * | 2017-05-15 | 2020-07-22 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法、および電力変換装置 |
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EP0887931A1 (en) | 1997-06-24 | 1998-12-30 | STMicroelectronics S.r.l. | Protection circuit for controlling the gate voltage of a high voltage LDMOS transistor |
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- 2004-08-17 US US10/919,405 patent/US7741695B2/en active Active
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- 2004-09-14 CN CNB2004100786326A patent/CN100352058C/zh active Active
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JP2002324848A (ja) * | 2001-02-20 | 2002-11-08 | Mitsubishi Electric Corp | 半導体装置 |
JP2004047937A (ja) * | 2002-05-24 | 2004-02-12 | Mitsubishi Electric Corp | 半導体装置 |
JP2004048058A (ja) * | 2003-09-25 | 2004-02-12 | Toyota Motor Corp | 薄膜半導体素子 |
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US20050179089A1 (en) | 2005-08-18 |
US7741695B2 (en) | 2010-06-22 |
CN100352058C (zh) | 2007-11-28 |
ITTO20040595A1 (it) | 2004-12-09 |
KR20050082418A (ko) | 2005-08-23 |
KR100589708B1 (ko) | 2006-06-19 |
CN1658390A (zh) | 2005-08-24 |
JP2005235892A (ja) | 2005-09-02 |
TW200529354A (en) | 2005-09-01 |
DE102004059627A1 (de) | 2005-09-08 |
TWI249811B (en) | 2006-02-21 |
DE102004059627B4 (de) | 2013-12-12 |
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