JP2005235892A5 - - Google Patents
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- Publication number
- JP2005235892A5 JP2005235892A5 JP2004041009A JP2004041009A JP2005235892A5 JP 2005235892 A5 JP2005235892 A5 JP 2005235892A5 JP 2004041009 A JP2004041009 A JP 2004041009A JP 2004041009 A JP2004041009 A JP 2004041009A JP 2005235892 A5 JP2005235892 A5 JP 2005235892A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004041009A JP4593126B2 (ja) | 2004-02-18 | 2004-02-18 | 半導体装置 |
| TW093123338A TWI249811B (en) | 2004-02-18 | 2004-08-04 | Semiconductor device |
| US10/919,405 US7741695B2 (en) | 2004-02-18 | 2004-08-17 | Semiconductor device |
| IT000595A ITTO20040595A1 (it) | 2004-02-18 | 2004-09-09 | Dispositivo a semiconduttore |
| CNB2004100786326A CN100352058C (zh) | 2004-02-18 | 2004-09-14 | 半导体器件 |
| DE102004059627A DE102004059627B4 (de) | 2004-02-18 | 2004-12-10 | Halbleitervorrichtung mit einem Hochpotentialinselbereich |
| KR1020040104733A KR100589708B1 (ko) | 2004-02-18 | 2004-12-13 | 반도체장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004041009A JP4593126B2 (ja) | 2004-02-18 | 2004-02-18 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005235892A JP2005235892A (ja) | 2005-09-02 |
| JP2005235892A5 true JP2005235892A5 (ja) | 2006-08-31 |
| JP4593126B2 JP4593126B2 (ja) | 2010-12-08 |
Family
ID=34836400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004041009A Expired - Lifetime JP4593126B2 (ja) | 2004-02-18 | 2004-02-18 | 半導体装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7741695B2 (ja) |
| JP (1) | JP4593126B2 (ja) |
| KR (1) | KR100589708B1 (ja) |
| CN (1) | CN100352058C (ja) |
| DE (1) | DE102004059627B4 (ja) |
| IT (1) | ITTO20040595A1 (ja) |
| TW (1) | TWI249811B (ja) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4832841B2 (ja) * | 2005-09-22 | 2011-12-07 | 三菱電機株式会社 | 半導体装置 |
| US7642617B2 (en) * | 2005-09-28 | 2010-01-05 | Agere Systems Inc. | Integrated circuit with depletion mode JFET |
| JP4783652B2 (ja) * | 2006-03-20 | 2011-09-28 | 株式会社リコー | 高効率電源回路および該高効率電源回路を組み込んだ電子機器 |
| US8445947B2 (en) * | 2008-07-04 | 2013-05-21 | Stmicroelectronics (Rousset) Sas | Electronic circuit having a diode-connected MOS transistor with an improved efficiency |
| JP5136544B2 (ja) * | 2009-12-16 | 2013-02-06 | 三菱電機株式会社 | 半導体装置 |
| US8618627B2 (en) * | 2010-06-24 | 2013-12-31 | Fairchild Semiconductor Corporation | Shielded level shift transistor |
| JP5719627B2 (ja) * | 2011-02-22 | 2015-05-20 | ローム株式会社 | 地絡保護回路及びこれを用いたスイッチ駆動装置 |
| JP5550681B2 (ja) * | 2012-06-19 | 2014-07-16 | 三菱電機株式会社 | 半導体装置 |
| JP5947151B2 (ja) * | 2012-08-24 | 2016-07-06 | 新電元工業株式会社 | 高耐圧半導体装置 |
| JP5996969B2 (ja) * | 2012-08-24 | 2016-09-21 | 新電元工業株式会社 | 高耐圧半導体装置 |
| JP6319761B2 (ja) * | 2013-06-25 | 2018-05-09 | ローム株式会社 | 半導体装置 |
| CN104426359B (zh) * | 2013-09-06 | 2018-07-06 | 上海宝芯源功率半导体有限公司 | 一种集成结型场效应晶体管的自举电路及自举方法 |
| JP6228428B2 (ja) * | 2013-10-30 | 2017-11-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| CN105824160B (zh) * | 2015-01-08 | 2020-06-16 | 群创光电股份有限公司 | 显示面板 |
| JP6686721B2 (ja) * | 2016-06-15 | 2020-04-22 | 富士電機株式会社 | 半導体集積回路装置 |
| JP6729487B2 (ja) * | 2017-05-15 | 2020-07-22 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法、および電力変換装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1131801A (en) * | 1978-01-18 | 1982-09-14 | Johannes A. Appels | Semiconductor device |
| JP2739004B2 (ja) * | 1992-01-16 | 1998-04-08 | 三菱電機株式会社 | 半導体装置 |
| US5502632A (en) | 1993-05-07 | 1996-03-26 | Philips Electronics North America Corporation | High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator |
| JP3075892B2 (ja) * | 1993-07-09 | 2000-08-14 | 株式会社東芝 | 半導体装置 |
| EP0646965B1 (en) * | 1993-09-17 | 1999-01-07 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | An integrated device with a bipolar transistor and a MOSFET transistor in an emitter switching configuration |
| EP0743752B1 (en) * | 1995-05-17 | 2004-07-28 | STMicroelectronics S.r.l. | Charging of a bootstrap capacitance through an LDMOS transistor |
| JP3917211B2 (ja) * | 1996-04-15 | 2007-05-23 | 三菱電機株式会社 | 半導体装置 |
| JP3400301B2 (ja) | 1997-03-17 | 2003-04-28 | 株式会社東芝 | 高耐圧半導体装置 |
| EP0887932A1 (en) | 1997-06-24 | 1998-12-30 | STMicroelectronics S.r.l. | Control of the body voltage of a high voltage LDMOS |
| EP0887931A1 (en) | 1997-06-24 | 1998-12-30 | STMicroelectronics S.r.l. | Protection circuit for controlling the gate voltage of a high voltage LDMOS transistor |
| JP3768656B2 (ja) * | 1997-09-18 | 2006-04-19 | 三菱電機株式会社 | 半導体装置 |
| JP4610786B2 (ja) * | 2001-02-20 | 2011-01-12 | 三菱電機株式会社 | 半導体装置 |
| JP4397602B2 (ja) * | 2002-05-24 | 2010-01-13 | 三菱電機株式会社 | 半導体装置 |
| JP4326835B2 (ja) | 2003-05-20 | 2009-09-09 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法 |
| JP3928608B2 (ja) * | 2003-09-25 | 2007-06-13 | トヨタ自動車株式会社 | 薄膜半導体素子 |
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2004
- 2004-02-18 JP JP2004041009A patent/JP4593126B2/ja not_active Expired - Lifetime
- 2004-08-04 TW TW093123338A patent/TWI249811B/zh not_active IP Right Cessation
- 2004-08-17 US US10/919,405 patent/US7741695B2/en active Active
- 2004-09-09 IT IT000595A patent/ITTO20040595A1/it unknown
- 2004-09-14 CN CNB2004100786326A patent/CN100352058C/zh active Active
- 2004-12-10 DE DE102004059627A patent/DE102004059627B4/de active Active
- 2004-12-13 KR KR1020040104733A patent/KR100589708B1/ko not_active IP Right Cessation