NL161621C - Halfgeleiderinrichting met veldeffecttransistor. - Google Patents
Halfgeleiderinrichting met veldeffecttransistor.Info
- Publication number
- NL161621C NL161621C NL6814763.A NL6814763A NL161621C NL 161621 C NL161621 C NL 161621C NL 6814763 A NL6814763 A NL 6814763A NL 161621 C NL161621 C NL 161621C
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor device
- field effect
- effect transistor
- transistor
- field
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/018—Compensation doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6814763.A NL161621C (nl) | 1968-10-16 | 1968-10-16 | Halfgeleiderinrichting met veldeffecttransistor. |
DE19691950530 DE1950530C3 (de) | 1968-10-16 | 1969-10-07 | Halbleiterbauelement mit Feldeffekttransistor |
GB50104/69A GB1281363A (en) | 1968-10-16 | 1969-10-13 | Semiconductor devices |
BR213265/69A BR6913265D0 (pt) | 1968-10-16 | 1969-10-13 | Dispositivo semicondutor provido de um corpo semicondutor recoberto em uma das superficies ao menos parcialmente por uma camada isolante compreendendo tal corpo pelo menos um transistor de efeito campo |
US865581A US3586931A (en) | 1968-10-16 | 1969-10-13 | Junction field effect power transistor with internally interconnected gate electrodes |
AT960069A AT320741B (de) | 1968-10-16 | 1969-10-13 | Halbleiterbauelement mit Feldeffekttransistor |
SE14031/69A SE362990B (nl) | 1968-10-16 | 1969-10-13 | |
CH1538069A CH506887A (de) | 1968-10-16 | 1969-10-13 | Halbleiterbauelement mit Feldeffekttransistor |
JP44081615A JPS507426B1 (nl) | 1968-10-16 | 1969-10-14 | |
ES372495A ES372495A1 (es) | 1968-10-16 | 1969-10-14 | Un dispositivo semiconductor. |
BE740342D BE740342A (nl) | 1968-10-16 | 1969-10-15 | |
FR6935455A FR2020851B1 (nl) | 1968-10-16 | 1969-10-16 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6814763.A NL161621C (nl) | 1968-10-16 | 1968-10-16 | Halfgeleiderinrichting met veldeffecttransistor. |
US86558169A | 1969-10-13 | 1969-10-13 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL6814763A NL6814763A (nl) | 1970-04-20 |
NL161621B NL161621B (nl) | 1979-09-17 |
NL161621C true NL161621C (nl) | 1980-02-15 |
Family
ID=26644364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6814763.A NL161621C (nl) | 1968-10-16 | 1968-10-16 | Halfgeleiderinrichting met veldeffecttransistor. |
Country Status (7)
Country | Link |
---|---|
US (1) | US3586931A (nl) |
AT (1) | AT320741B (nl) |
BE (1) | BE740342A (nl) |
CH (1) | CH506887A (nl) |
FR (1) | FR2020851B1 (nl) |
GB (1) | GB1281363A (nl) |
NL (1) | NL161621C (nl) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3783349A (en) * | 1971-05-25 | 1974-01-01 | Harris Intertype Corp | Field effect transistor |
NL184552C (nl) * | 1978-07-24 | 1989-08-16 | Philips Nv | Halfgeleiderinrichting voor hoge spanningen. |
CA1131801A (en) * | 1978-01-18 | 1982-09-14 | Johannes A. Appels | Semiconductor device |
FR2472838A1 (fr) * | 1979-12-26 | 1981-07-03 | Radiotechnique Compelec | Transistor a effet de champ du type a jonction et son procede de realisation |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3335342A (en) * | 1962-06-11 | 1967-08-08 | Fairchild Camera Instr Co | Field-effect transistors |
FR1431642A (fr) * | 1964-05-06 | 1966-03-11 | Motorola Inc | Perfectionnements à la fabrication de limiteurs de courant à effet de champ |
DE1439699A1 (de) * | 1964-07-15 | 1968-12-19 | Telefunken Patent | Feldeffekttransistor mit parallel geschalteten steuerbaren Widerstandsbahnen |
-
1968
- 1968-10-16 NL NL6814763.A patent/NL161621C/nl not_active IP Right Cessation
-
1969
- 1969-10-13 US US865581A patent/US3586931A/en not_active Expired - Lifetime
- 1969-10-13 AT AT960069A patent/AT320741B/de not_active IP Right Cessation
- 1969-10-13 CH CH1538069A patent/CH506887A/de not_active IP Right Cessation
- 1969-10-13 GB GB50104/69A patent/GB1281363A/en not_active Expired
- 1969-10-15 BE BE740342D patent/BE740342A/xx unknown
- 1969-10-16 FR FR6935455A patent/FR2020851B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1950530B2 (de) | 1976-12-23 |
NL6814763A (nl) | 1970-04-20 |
BE740342A (nl) | 1970-04-15 |
AT320741B (de) | 1975-02-25 |
GB1281363A (en) | 1972-07-12 |
FR2020851A1 (nl) | 1970-07-17 |
CH506887A (de) | 1971-04-30 |
US3586931A (en) | 1971-06-22 |
NL161621B (nl) | 1979-09-17 |
FR2020851B1 (nl) | 1975-01-10 |
DE1950530A1 (de) | 1970-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
V1 | Lapsed because of non-payment of the annual fee | ||
NL80 | Abbreviated name of patent owner mentioned of already nullified patent |
Owner name: PHILIPS |