NL161621C - Halfgeleiderinrichting met veldeffecttransistor. - Google Patents

Halfgeleiderinrichting met veldeffecttransistor.

Info

Publication number
NL161621C
NL161621C NL6814763.A NL6814763A NL161621C NL 161621 C NL161621 C NL 161621C NL 6814763 A NL6814763 A NL 6814763A NL 161621 C NL161621 C NL 161621C
Authority
NL
Netherlands
Prior art keywords
semiconductor device
field effect
effect transistor
transistor
field
Prior art date
Application number
NL6814763.A
Other languages
English (en)
Other versions
NL161621B (nl
NL6814763A (nl
Inventor
Rijkert Jan Ir Nienhuis
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL6814763.A priority Critical patent/NL161621C/nl
Priority to DE19691950530 priority patent/DE1950530C3/de
Priority to CH1538069A priority patent/CH506887A/de
Priority to BR213265/69A priority patent/BR6913265D0/pt
Priority to SE14031/69A priority patent/SE362990B/xx
Priority to GB50104/69A priority patent/GB1281363A/en
Priority to US865581A priority patent/US3586931A/en
Priority to AT960069A priority patent/AT320741B/de
Priority to ES372495A priority patent/ES372495A1/es
Priority to JP44081615A priority patent/JPS507426B1/ja
Priority to BE740342D priority patent/BE740342A/xx
Priority to FR6935455A priority patent/FR2020851B1/fr
Publication of NL6814763A publication Critical patent/NL6814763A/xx
Publication of NL161621B publication Critical patent/NL161621B/nl
Application granted granted Critical
Publication of NL161621C publication Critical patent/NL161621C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/018—Compensation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
NL6814763.A 1968-10-16 1968-10-16 Halfgeleiderinrichting met veldeffecttransistor. NL161621C (nl)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NL6814763.A NL161621C (nl) 1968-10-16 1968-10-16 Halfgeleiderinrichting met veldeffecttransistor.
DE19691950530 DE1950530C3 (de) 1968-10-16 1969-10-07 Halbleiterbauelement mit Feldeffekttransistor
AT960069A AT320741B (de) 1968-10-16 1969-10-13 Halbleiterbauelement mit Feldeffekttransistor
SE14031/69A SE362990B (nl) 1968-10-16 1969-10-13
GB50104/69A GB1281363A (en) 1968-10-16 1969-10-13 Semiconductor devices
US865581A US3586931A (en) 1968-10-16 1969-10-13 Junction field effect power transistor with internally interconnected gate electrodes
CH1538069A CH506887A (de) 1968-10-16 1969-10-13 Halbleiterbauelement mit Feldeffekttransistor
BR213265/69A BR6913265D0 (pt) 1968-10-16 1969-10-13 Dispositivo semicondutor provido de um corpo semicondutor recoberto em uma das superficies ao menos parcialmente por uma camada isolante compreendendo tal corpo pelo menos um transistor de efeito campo
ES372495A ES372495A1 (es) 1968-10-16 1969-10-14 Un dispositivo semiconductor.
JP44081615A JPS507426B1 (nl) 1968-10-16 1969-10-14
BE740342D BE740342A (nl) 1968-10-16 1969-10-15
FR6935455A FR2020851B1 (nl) 1968-10-16 1969-10-16

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL6814763.A NL161621C (nl) 1968-10-16 1968-10-16 Halfgeleiderinrichting met veldeffecttransistor.
US86558169A 1969-10-13 1969-10-13

Publications (3)

Publication Number Publication Date
NL6814763A NL6814763A (nl) 1970-04-20
NL161621B NL161621B (nl) 1979-09-17
NL161621C true NL161621C (nl) 1980-02-15

Family

ID=26644364

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6814763.A NL161621C (nl) 1968-10-16 1968-10-16 Halfgeleiderinrichting met veldeffecttransistor.

Country Status (7)

Country Link
US (1) US3586931A (nl)
AT (1) AT320741B (nl)
BE (1) BE740342A (nl)
CH (1) CH506887A (nl)
FR (1) FR2020851B1 (nl)
GB (1) GB1281363A (nl)
NL (1) NL161621C (nl)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783349A (en) * 1971-05-25 1974-01-01 Harris Intertype Corp Field effect transistor
NL184552C (nl) * 1978-07-24 1989-08-16 Philips Nv Halfgeleiderinrichting voor hoge spanningen.
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
FR2472838A1 (fr) * 1979-12-26 1981-07-03 Radiotechnique Compelec Transistor a effet de champ du type a jonction et son procede de realisation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335342A (en) * 1962-06-11 1967-08-08 Fairchild Camera Instr Co Field-effect transistors
FR1431642A (fr) * 1964-05-06 1966-03-11 Motorola Inc Perfectionnements à la fabrication de limiteurs de courant à effet de champ
DE1439699A1 (de) * 1964-07-15 1968-12-19 Telefunken Patent Feldeffekttransistor mit parallel geschalteten steuerbaren Widerstandsbahnen

Also Published As

Publication number Publication date
NL161621B (nl) 1979-09-17
CH506887A (de) 1971-04-30
US3586931A (en) 1971-06-22
AT320741B (de) 1975-02-25
FR2020851B1 (nl) 1975-01-10
FR2020851A1 (nl) 1970-07-17
GB1281363A (en) 1972-07-12
DE1950530B2 (de) 1976-12-23
BE740342A (nl) 1970-04-15
DE1950530A1 (de) 1970-04-23
NL6814763A (nl) 1970-04-20

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: PHILIPS