NL170349C - Halfgeleiderinrichting met complementaire veldeffecttransistoren. - Google Patents

Halfgeleiderinrichting met complementaire veldeffecttransistoren.

Info

Publication number
NL170349C
NL170349C NLAANVRAGE7002793,A NL7002793A NL170349C NL 170349 C NL170349 C NL 170349C NL 7002793 A NL7002793 A NL 7002793A NL 170349 C NL170349 C NL 170349C
Authority
NL
Netherlands
Prior art keywords
semiconductor device
field effect
effect transistors
complementary field
complementary
Prior art date
Application number
NLAANVRAGE7002793,A
Other languages
English (en)
Other versions
NL170349B (nl
NL7002793A (nl
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP44014217A external-priority patent/JPS5114868B1/ja
Priority claimed from JP44014216A external-priority patent/JPS5114867B1/ja
Priority claimed from JP44014218A external-priority patent/JPS5114869B1/ja
Priority claimed from JP44015527A external-priority patent/JPS5134271B1/ja
Priority claimed from JP44015528A external-priority patent/JPS5139078B1/ja
Priority claimed from JP44039545A external-priority patent/JPS5140428B1/ja
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Publication of NL7002793A publication Critical patent/NL7002793A/xx
Publication of NL170349B publication Critical patent/NL170349B/nl
Application granted granted Critical
Publication of NL170349C publication Critical patent/NL170349C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
NLAANVRAGE7002793,A 1969-02-27 1970-02-27 Halfgeleiderinrichting met complementaire veldeffecttransistoren. NL170349C (nl)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP44014217A JPS5114868B1 (nl) 1969-02-27 1969-02-27
JP44014216A JPS5114867B1 (nl) 1969-02-27 1969-02-27
JP44014218A JPS5114869B1 (nl) 1969-02-27 1969-02-27
JP44015527A JPS5134271B1 (nl) 1969-02-28 1969-02-28
JP44015528A JPS5139078B1 (nl) 1969-02-28 1969-02-28
JP44039545A JPS5140428B1 (nl) 1969-05-23 1969-05-23

Publications (3)

Publication Number Publication Date
NL7002793A NL7002793A (nl) 1970-08-31
NL170349B NL170349B (nl) 1982-05-17
NL170349C true NL170349C (nl) 1982-10-18

Family

ID=27548501

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7002793,A NL170349C (nl) 1969-02-27 1970-02-27 Halfgeleiderinrichting met complementaire veldeffecttransistoren.

Country Status (4)

Country Link
US (1) US3603848A (nl)
DE (1) DE2009102C3 (nl)
GB (1) GB1261494A (nl)
NL (1) NL170349C (nl)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL171309C (nl) * 1970-03-02 1983-03-01 Hitachi Ltd Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium.
US3969753A (en) * 1972-06-30 1976-07-13 Rockwell International Corporation Silicon on sapphire oriented for maximum mobility
US4268848A (en) * 1979-05-07 1981-05-19 Motorola, Inc. Preferred device orientation on integrated circuits for better matching under mechanical stress
DE3001772A1 (de) * 1980-01-18 1981-07-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
JPH0656887B2 (ja) * 1982-02-03 1994-07-27 株式会社日立製作所 半導体装置およびその製法
US4768076A (en) * 1984-09-14 1988-08-30 Hitachi, Ltd. Recrystallized CMOS with different crystal planes
US4777517A (en) * 1984-11-29 1988-10-11 Fujitsu Limited Compound semiconductor integrated circuit device
JPS6292361A (ja) * 1985-10-17 1987-04-27 Toshiba Corp 相補型半導体装置
DE3780895T2 (de) * 1986-09-24 1993-03-11 Nec Corp Komplementaerer feldeffekt-transistor mit isoliertem gate.
JPH01162376A (ja) * 1987-12-18 1989-06-26 Fujitsu Ltd 半導体装置の製造方法
WO1990007796A1 (en) * 1989-01-03 1990-07-12 Massachusetts Institute Of Technology Insulator films on diamond
JP3038939B2 (ja) * 1991-02-08 2000-05-08 日産自動車株式会社 半導体装置
US5155559A (en) * 1991-07-25 1992-10-13 North Carolina State University High temperature refractory silicide rectifying contact
JP3017860B2 (ja) * 1991-10-01 2000-03-13 株式会社東芝 半導体基体およびその製造方法とその半導体基体を用いた半導体装置
US5294814A (en) * 1992-06-09 1994-03-15 Kobe Steel Usa Vertical diamond field effect transistor
US5391895A (en) * 1992-09-21 1995-02-21 Kobe Steel Usa, Inc. Double diamond mesa vertical field effect transistor
US6483171B1 (en) * 1999-08-13 2002-11-19 Micron Technology, Inc. Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming same
US6967351B2 (en) * 2001-12-04 2005-11-22 International Business Machines Corporation Finfet SRAM cell using low mobility plane for cell stability and method for forming
JP4265882B2 (ja) * 2001-12-13 2009-05-20 忠弘 大見 相補型ｍｉｓ装置
US6864520B2 (en) * 2002-04-04 2005-03-08 International Business Machines Corporation Germanium field effect transistor and method of fabricating the same
JP4030383B2 (ja) * 2002-08-26 2008-01-09 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6794718B2 (en) * 2002-12-19 2004-09-21 International Business Machines Corporation High mobility crystalline planes in double-gate CMOS technology
KR100641365B1 (ko) * 2005-09-12 2006-11-01 삼성전자주식회사 최적화된 채널 면 방위를 갖는 모스 트랜지스터들, 이를구비하는 반도체 소자들 및 그 제조방법들
US7186622B2 (en) * 2004-07-15 2007-03-06 Infineon Technologies Ag Formation of active area using semiconductor growth process without STI integration
US7348658B2 (en) * 2004-08-30 2008-03-25 International Business Machines Corporation Multilayer silicon over insulator device
US7298009B2 (en) * 2005-02-01 2007-11-20 Infineon Technologies Ag Semiconductor method and device with mixed orientation substrate
US7521993B1 (en) * 2005-05-13 2009-04-21 Sun Microsystems, Inc. Substrate stress signal amplifier
US8530355B2 (en) * 2005-12-23 2013-09-10 Infineon Technologies Ag Mixed orientation semiconductor device and method
US20070190795A1 (en) * 2006-02-13 2007-08-16 Haoren Zhuang Method for fabricating a semiconductor device with a high-K dielectric

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL213347A (nl) * 1955-12-30
US2858246A (en) * 1957-04-22 1958-10-28 Bell Telephone Labor Inc Silicon single crystal conductor devices
GB1060474A (en) * 1963-03-27 1967-03-01 Siemens Ag The production of monocrystalline semiconductor bodies of silicon or germanium
US3430109A (en) * 1965-09-28 1969-02-25 Chou H Li Solid-state device with differentially expanded junction surface
US3457473A (en) * 1965-11-10 1969-07-22 Nippon Electric Co Semiconductor device with schottky barrier formed on (100) plane of gaas
US3447902A (en) * 1966-04-04 1969-06-03 Motorola Inc Single crystal silicon rods

Also Published As

Publication number Publication date
NL170349B (nl) 1982-05-17
GB1261494A (en) 1972-01-26
US3603848A (en) 1971-09-07
DE2009102A1 (de) 1970-09-10
DE2009102B2 (de) 1978-12-07
DE2009102C3 (de) 1981-02-12
NL7002793A (nl) 1970-08-31

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V1 Lapsed because of non-payment of the annual fee