JPS5753977A - Toranjisuta - Google Patents
ToranjisutaInfo
- Publication number
- JPS5753977A JPS5753977A JP12978380A JP12978380A JPS5753977A JP S5753977 A JPS5753977 A JP S5753977A JP 12978380 A JP12978380 A JP 12978380A JP 12978380 A JP12978380 A JP 12978380A JP S5753977 A JPS5753977 A JP S5753977A
- Authority
- JP
- Japan
- Prior art keywords
- collector
- base
- layer
- emitter
- dopant concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002019 doping agent Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12978380A JPS5753977A (ja) | 1980-09-17 | 1980-09-17 | Toranjisuta |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12978380A JPS5753977A (ja) | 1980-09-17 | 1980-09-17 | Toranjisuta |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5753977A true JPS5753977A (ja) | 1982-03-31 |
JPH0123950B2 JPH0123950B2 (ja) | 1989-05-09 |
Family
ID=15018107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12978380A Granted JPS5753977A (ja) | 1980-09-17 | 1980-09-17 | Toranjisuta |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5753977A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007531292A (ja) * | 2004-04-02 | 2007-11-01 | プレマ セミコンダクター ゲーエムベーハー | バイポーラトランジスタおよびバイポーラトランジスタの製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54109780A (en) * | 1978-01-18 | 1979-08-28 | Philips Nv | Semiconductor |
-
1980
- 1980-09-17 JP JP12978380A patent/JPS5753977A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54109780A (en) * | 1978-01-18 | 1979-08-28 | Philips Nv | Semiconductor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007531292A (ja) * | 2004-04-02 | 2007-11-01 | プレマ セミコンダクター ゲーエムベーハー | バイポーラトランジスタおよびバイポーラトランジスタの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0123950B2 (ja) | 1989-05-09 |
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