JPS5783056A - Manufacture of electrostatic type semicondutor device - Google Patents
Manufacture of electrostatic type semicondutor deviceInfo
- Publication number
- JPS5783056A JPS5783056A JP15824880A JP15824880A JPS5783056A JP S5783056 A JPS5783056 A JP S5783056A JP 15824880 A JP15824880 A JP 15824880A JP 15824880 A JP15824880 A JP 15824880A JP S5783056 A JPS5783056 A JP S5783056A
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- main surface
- epitaxial layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000002950 deficient Effects 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To improve the unsatisfactory withstand voltage and to increase the yielding rate of a high-powered element for the subject semicondutor device by a method wherein a gate region is formed on one main surface of a substrate, and after a cathode region has been formed by providing an epitaxial layer, the defective crystal section located in the vicinity of the gate is removed. CONSTITUTION:For example, after a number of P<+> gate regions 12 have been formed by diffusion on one main surface of the N<-> substrate and P<+> anode region has been formed by diffusion on the other main surface of the N<-> substrate, an N type epitaxial layer is grown on the gate side main surface. Then, an N<+> layer is diffused on a region 11, a selective etching is performed on the epitaxial layer on the circumference of a channel region 14, and an electrostatic conductor type thyristor is obtained. Then, the defective part A of the cathode gate junction 16 generated due to the defective crystal and the like on the epitaxial layer is detected and it is removed (or short-circuited and closed by injecting a P<+> impurity in the channel region 14b having the defective part A). Through these procedures, the poor withstand voltage in the element with large capacity can be improved and the yielding rate of the device can also be increased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15824880A JPS5783056A (en) | 1980-11-12 | 1980-11-12 | Manufacture of electrostatic type semicondutor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15824880A JPS5783056A (en) | 1980-11-12 | 1980-11-12 | Manufacture of electrostatic type semicondutor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5783056A true JPS5783056A (en) | 1982-05-24 |
Family
ID=15667482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15824880A Pending JPS5783056A (en) | 1980-11-12 | 1980-11-12 | Manufacture of electrostatic type semicondutor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5783056A (en) |
-
1980
- 1980-11-12 JP JP15824880A patent/JPS5783056A/en active Pending
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