IT1138316B - Dispositivo semiconduttore - Google Patents

Dispositivo semiconduttore

Info

Publication number
IT1138316B
IT1138316B IT21534/81A IT2153481A IT1138316B IT 1138316 B IT1138316 B IT 1138316B IT 21534/81 A IT21534/81 A IT 21534/81A IT 2153481 A IT2153481 A IT 2153481A IT 1138316 B IT1138316 B IT 1138316B
Authority
IT
Italy
Prior art keywords
semiconductive device
semiconductive
Prior art date
Application number
IT21534/81A
Other languages
English (en)
Other versions
IT8121534A0 (it
Inventor
Sonnenberger Paul
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT8121534A0 publication Critical patent/IT8121534A0/it
Application granted granted Critical
Publication of IT1138316B publication Critical patent/IT1138316B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
IT21534/81A 1980-05-09 1981-05-06 Dispositivo semiconduttore IT1138316B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3017750A DE3017750C2 (de) 1980-05-09 1980-05-09 Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor

Publications (2)

Publication Number Publication Date
IT8121534A0 IT8121534A0 (it) 1981-05-06
IT1138316B true IT1138316B (it) 1986-09-17

Family

ID=6101969

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21534/81A IT1138316B (it) 1980-05-09 1981-05-06 Dispositivo semiconduttore

Country Status (7)

Country Link
US (1) US4689655A (it)
JP (1) JPS574158A (it)
DE (1) DE3017750C2 (it)
FR (1) FR2482369A1 (it)
GB (1) GB2075753B (it)
IT (1) IT1138316B (it)
NL (1) NL8102201A (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138174A (en) * 1981-02-20 1982-08-26 Hitachi Ltd Semiconductor device
US4656496A (en) * 1985-02-04 1987-04-07 National Semiconductor Corporation Power transistor emitter ballasting
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor
US5019888A (en) * 1987-07-23 1991-05-28 Texas Instruments Incorporated Circuit to improve electrostatic discharge protection
GB2211988B (en) * 1987-11-03 1992-04-01 Stc Plc Current matching of bipolar transistors
DE3926886C2 (de) * 1989-08-16 1999-10-21 Bosch Gmbh Robert In Planartechnologie erstellter Großchip mit Schalttransistoren
US5939739A (en) * 1996-05-31 1999-08-17 The Whitaker Corporation Separation of thermal and electrical paths in flip chip ballasted power heterojunction bipolar transistors
US5841184A (en) * 1997-09-19 1998-11-24 The Whitaker Corporation Integrated emitter drain bypass capacitor for microwave/RF power device applications

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3609460A (en) * 1968-06-28 1971-09-28 Rca Corp Power transistor having ballasted emitter fingers interdigitated with base fingers
GB1288384A (it) * 1969-01-31 1972-09-06
GB1280948A (en) * 1969-12-17 1972-07-12 Motorola Inc Semiconductor structure
US3704398A (en) * 1970-02-14 1972-11-28 Nippon Electric Co Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
US3740621A (en) * 1971-08-30 1973-06-19 Rca Corp Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current
JPS5333505Y2 (it) * 1973-01-19 1978-08-17
JPS5043885A (it) * 1973-08-20 1975-04-19
IT1038800B (it) * 1975-06-10 1979-11-30 Ates Componenti Elettron Tranistore planare di potenza
DE2604411A1 (de) * 1976-02-05 1977-08-11 Philips Patentverwaltung Halbleiterbauelement mit bei gleicher basis-emitter-spannung verschieden grosse stroeme fuehrenden transistoren
NL181612C (nl) * 1977-05-25 1988-03-16 Philips Nv Halfgeleiderinrichting.
IT1084368B (it) * 1977-07-08 1985-05-25 Ates Componenti Elettron Transistore di potenza con alta velocita' di spegnimento e mezzi per ottenerlo.
JPS54140875A (en) * 1978-04-24 1979-11-01 Nec Corp Semiconductor device
US4231059A (en) * 1978-11-01 1980-10-28 Westinghouse Electric Corp. Technique for controlling emitter ballast resistance
JPS55138273A (en) * 1979-04-11 1980-10-28 Fujitsu Ltd Transistor

Also Published As

Publication number Publication date
JPH0419705B2 (it) 1992-03-31
IT8121534A0 (it) 1981-05-06
DE3017750A1 (de) 1981-11-26
GB2075753B (en) 1984-04-04
FR2482369A1 (fr) 1981-11-13
JPS574158A (en) 1982-01-09
DE3017750C2 (de) 1985-03-07
US4689655A (en) 1987-08-25
NL8102201A (nl) 1981-12-01
FR2482369B1 (it) 1983-12-09
GB2075753A (en) 1981-11-18

Similar Documents

Publication Publication Date Title
DK159008C (da) Skarifikationsapparat
BR8102396A (pt) Dispositivo percutaneo
SE8105257L (sv) Halvledaranordning
AR229862A1 (es) Dispositivo eseritor
IT1110026B (it) Dispositivo semiconduttore
IT1194011B (it) Dispositivo semiconduttore
BR8101433A (pt) Dispositivos antiviolacao
DK150966C (da) Emulgeringsanordning
SE8007621L (sv) Klyvanordning
BR8303890A (pt) Dispositivo anti-refulgor
DK471383A (da) Ultralyd-maaleanordning
IT1164353B (it) Dispositivo semiconduttore
IT1139664B (it) Dispositivo semiconduttore
IT1111929B (it) Dispositivo semiconduttore
IT1110956B (it) Dispositivo semiconduttore
IT1138316B (it) Dispositivo semiconduttore
BR8107975A (pt) Dispositivo espremedor
IT1139848B (it) Dispositivo semiconduttore
BR8104198A (pt) Dispositivo em radiosondas
IT1172446B (it) Dispositivo semiconduttore
IT1140550B (it) Dispositivo semiconduttore
IT1122226B (it) Dispositivo semiconduttore
IT1178732B (it) Dispositivo semiconduttore
ES259399Y (es) Dispositivo de lazada
DE3374084D1 (de) Radiogoniometric device

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970530