GB2211988B - Current matching of bipolar transistors - Google Patents

Current matching of bipolar transistors

Info

Publication number
GB2211988B
GB2211988B GB8725688A GB8725688A GB2211988B GB 2211988 B GB2211988 B GB 2211988B GB 8725688 A GB8725688 A GB 8725688A GB 8725688 A GB8725688 A GB 8725688A GB 2211988 B GB2211988 B GB 2211988B
Authority
GB
United Kingdom
Prior art keywords
bipolar transistors
current matching
matching
current
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8725688A
Other versions
GB8725688D0 (en
GB2211988A (en
Inventor
Jeffrey Peter Harris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Nortel Networks Optical Components Ltd
Original Assignee
STC PLC
Northern Telecom Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC, Northern Telecom Europe Ltd filed Critical STC PLC
Priority to GB8725688A priority Critical patent/GB2211988B/en
Publication of GB8725688D0 publication Critical patent/GB8725688D0/en
Priority to EP19880310302 priority patent/EP0316104A3/en
Publication of GB2211988A publication Critical patent/GB2211988A/en
Application granted granted Critical
Publication of GB2211988B publication Critical patent/GB2211988B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
GB8725688A 1987-11-03 1987-11-03 Current matching of bipolar transistors Expired - Lifetime GB2211988B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB8725688A GB2211988B (en) 1987-11-03 1987-11-03 Current matching of bipolar transistors
EP19880310302 EP0316104A3 (en) 1987-11-03 1988-11-02 Integrated circuits comprising resistors and bipolar transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8725688A GB2211988B (en) 1987-11-03 1987-11-03 Current matching of bipolar transistors

Publications (3)

Publication Number Publication Date
GB8725688D0 GB8725688D0 (en) 1987-12-09
GB2211988A GB2211988A (en) 1989-07-12
GB2211988B true GB2211988B (en) 1992-04-01

Family

ID=10626331

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8725688A Expired - Lifetime GB2211988B (en) 1987-11-03 1987-11-03 Current matching of bipolar transistors

Country Status (1)

Country Link
GB (1) GB2211988B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2697698A1 (en) * 1992-11-04 1994-05-06 Philips Electronique Lab Semiconductor device comprising a broadband, high gain monolithically integrated amplifier circuit.

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4266236A (en) * 1978-04-24 1981-05-05 Nippon Electric Co., Ltd. Transistor having emitter resistors for stabilization at high power operation
GB2075753A (en) * 1980-05-09 1981-11-18 Philips Nv H1k bipolar transistor emitter series resistances
GB2175441A (en) * 1985-05-03 1986-11-26 Texas Instruments Ltd Power bipolar transistor
US4626886A (en) * 1983-08-12 1986-12-02 Siemens Aktiengesellschaft Power transistor
US4656496A (en) * 1985-02-04 1987-04-07 National Semiconductor Corporation Power transistor emitter ballasting
EP0316104A2 (en) * 1987-11-03 1989-05-17 Stc Plc Integrated circuits comprising resistors and bipolar transistors

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4266236A (en) * 1978-04-24 1981-05-05 Nippon Electric Co., Ltd. Transistor having emitter resistors for stabilization at high power operation
US4266236B1 (en) * 1978-04-24 1983-10-11
GB2075753A (en) * 1980-05-09 1981-11-18 Philips Nv H1k bipolar transistor emitter series resistances
US4626886A (en) * 1983-08-12 1986-12-02 Siemens Aktiengesellschaft Power transistor
US4656496A (en) * 1985-02-04 1987-04-07 National Semiconductor Corporation Power transistor emitter ballasting
GB2175441A (en) * 1985-05-03 1986-11-26 Texas Instruments Ltd Power bipolar transistor
EP0316104A2 (en) * 1987-11-03 1989-05-17 Stc Plc Integrated circuits comprising resistors and bipolar transistors

Also Published As

Publication number Publication date
GB8725688D0 (en) 1987-12-09
GB2211988A (en) 1989-07-12

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19931103