GB8710618D0 - Bipolar transistors - Google Patents

Bipolar transistors

Info

Publication number
GB8710618D0
GB8710618D0 GB878710618A GB8710618A GB8710618D0 GB 8710618 D0 GB8710618 D0 GB 8710618D0 GB 878710618 A GB878710618 A GB 878710618A GB 8710618 A GB8710618 A GB 8710618A GB 8710618 D0 GB8710618 D0 GB 8710618D0
Authority
GB
United Kingdom
Prior art keywords
bipolar transistors
bipolar
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB878710618A
Other versions
GB2204992A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Telecommunications PLC
Original Assignee
British Telecommunications PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecommunications PLC filed Critical British Telecommunications PLC
Priority to GB08710618A priority Critical patent/GB2204992A/en
Publication of GB8710618D0 publication Critical patent/GB8710618D0/en
Publication of GB2204992A publication Critical patent/GB2204992A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
GB08710618A 1987-05-05 1987-05-05 Bipolar transistor Withdrawn GB2204992A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08710618A GB2204992A (en) 1987-05-05 1987-05-05 Bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08710618A GB2204992A (en) 1987-05-05 1987-05-05 Bipolar transistor

Publications (2)

Publication Number Publication Date
GB8710618D0 true GB8710618D0 (en) 1987-06-10
GB2204992A GB2204992A (en) 1988-11-23

Family

ID=10616848

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08710618A Withdrawn GB2204992A (en) 1987-05-05 1987-05-05 Bipolar transistor

Country Status (1)

Country Link
GB (1) GB2204992A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1248534B (en) * 1991-06-24 1995-01-19 Sgs Thomson Microelectronics PROCEDURE FOR THE CREATION OF CALIBRATION STRUCTURES PARTICULARLY FOR THE CALIBRATION OF MACHINES FOR MEASURING THE MISALIGNMENT IN INTEGRATED CIRCUITS IN GENERAL.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4210689A (en) * 1977-12-26 1980-07-01 Tokyo Shibaura Denki Kabushiki Kaisha Method of producing semiconductor devices
FR2454698A1 (en) * 1979-04-20 1980-11-14 Radiotechnique Compelec METHOD FOR PRODUCING INTEGRATED CIRCUITS USING A MULTILAYER MASK AND DEVICES OBTAINED BY THIS METHOD
US4512076A (en) * 1982-12-20 1985-04-23 Raytheon Company Semiconductor device fabrication process
NL8402856A (en) * 1984-09-18 1986-04-16 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

Also Published As

Publication number Publication date
GB2204992A (en) 1988-11-23

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)