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GB8601830D0 - Fabricated transistors - Google Patents

Fabricated transistors

Info

Publication number
GB8601830D0
GB8601830D0 GB868601830A GB8601830A GB8601830D0 GB 8601830 D0 GB8601830 D0 GB 8601830D0 GB 868601830 A GB868601830 A GB 868601830A GB 8601830 A GB8601830 A GB 8601830A GB 8601830 D0 GB8601830 D0 GB 8601830D0
Authority
GB
UNITED KINGDOM
Prior art keywords
fabricated transistors
transistors
fabricated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB868601830A
Other versions
GB2185851A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co PLC
Original Assignee
Plessey Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co PLC filed Critical Plessey Co PLC
Priority to GB08601830A priority Critical patent/GB2185851A/en
Publication of GB8601830D0 publication Critical patent/GB8601830D0/en
Publication of GB2185851A publication Critical patent/GB2185851A/en
Application status is Withdrawn legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568Lateral single gate silicon transistors
    • H01L29/66651Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642Isolation within the component, i.e. internal isolation
    • H01L29/0649Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
GB08601830A 1986-01-25 1986-01-25 Method of fabricating an mos transistor Withdrawn GB2185851A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08601830A GB2185851A (en) 1986-01-25 1986-01-25 Method of fabricating an mos transistor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB08601830A GB2185851A (en) 1986-01-25 1986-01-25 Method of fabricating an mos transistor
JP50089087A JPS63502544A (en) 1986-01-25 1987-01-19
EP19870900849 EP0258285A1 (en) 1986-01-25 1987-01-19 Methods for fabricating transistors and mos transistors fabricated by such methods
PCT/GB1987/000030 WO1987004563A1 (en) 1986-01-25 1987-01-19 Methods for fabricating transistors and mos transistors fabricated by such methods

Publications (2)

Publication Number Publication Date
GB8601830D0 true GB8601830D0 (en) 1986-02-26
GB2185851A GB2185851A (en) 1987-07-29

Family

ID=10591944

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08601830A Withdrawn GB2185851A (en) 1986-01-25 1986-01-25 Method of fabricating an mos transistor

Country Status (4)

Country Link
EP (1) EP0258285A1 (en)
JP (1) JPS63502544A (en)
GB (1) GB2185851A (en)
WO (1) WO1987004563A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453153A (en) * 1987-11-13 1995-09-26 Kopin Corporation Zone-melting recrystallization process
US5021119A (en) * 1987-11-13 1991-06-04 Kopin Corporation Zone-melting recrystallization process
US4863877A (en) * 1987-11-13 1989-09-05 Kopin Corporation Ion implantation and annealing of compound semiconductor layers
CN1395316A (en) * 2001-07-04 2003-02-05 松下电器产业株式会社 Semiconductor device and its manufacturing method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3764413A (en) * 1970-11-25 1973-10-09 Nippon Electric Co Method of producing insulated gate field effect transistors
JPS49112574A (en) * 1973-02-24 1974-10-26
JPS6143864B2 (en) * 1977-06-03 1986-09-30 Fujitsu Ltd
US4269631A (en) * 1980-01-14 1981-05-26 International Business Machines Corporation Selective epitaxy method using laser annealing for making filamentary transistors
JPS5861622A (en) * 1981-10-09 1983-04-12 Hitachi Ltd Manufacture of single crystal thin film
EP0077737A3 (en) * 1981-10-19 1984-11-07 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Low capacitance field effect transistor
US4476475A (en) * 1982-11-19 1984-10-09 Northern Telecom Limited Stacked MOS transistor
JPS59195871A (en) * 1983-04-20 1984-11-07 Mitsubishi Electric Corp Manufacture of metal oxide semiconductor field-effect transistor

Also Published As

Publication number Publication date
EP0258285A1 (en) 1988-03-09
GB2185851A (en) 1987-07-29
JPS63502544A (en) 1988-09-22
WO1987004563A1 (en) 1987-07-30

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)