EP0197424A3 - Bipolar transistor and process of fabrication thereof - Google Patents

Bipolar transistor and process of fabrication thereof Download PDF

Info

Publication number
EP0197424A3
EP0197424A3 EP86104067A EP86104067A EP0197424A3 EP 0197424 A3 EP0197424 A3 EP 0197424A3 EP 86104067 A EP86104067 A EP 86104067A EP 86104067 A EP86104067 A EP 86104067A EP 0197424 A3 EP0197424 A3 EP 0197424A3
Authority
EP
European Patent Office
Prior art keywords
fabrication
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP86104067A
Other versions
EP0197424A2 (en
EP0197424B1 (en
Inventor
Tadatsugu Itoh
Hideaki Kohzu
Yasuhiro Hosono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of EP0197424A2 publication Critical patent/EP0197424A2/en
Publication of EP0197424A3 publication Critical patent/EP0197424A3/en
Application granted granted Critical
Publication of EP0197424B1 publication Critical patent/EP0197424B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
EP86104067A 1985-03-25 1986-03-25 Process of fabricating a heterojunction bipolar transistor Expired - Lifetime EP0197424B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP5995785 1985-03-25
JP5995885 1985-03-25
JP59957/85 1985-03-25
JP59958/85 1985-03-25

Publications (3)

Publication Number Publication Date
EP0197424A2 EP0197424A2 (en) 1986-10-15
EP0197424A3 true EP0197424A3 (en) 1988-05-25
EP0197424B1 EP0197424B1 (en) 1993-06-02

Family

ID=26401021

Family Applications (1)

Application Number Title Priority Date Filing Date
EP86104067A Expired - Lifetime EP0197424B1 (en) 1985-03-25 1986-03-25 Process of fabricating a heterojunction bipolar transistor

Country Status (4)

Country Link
US (1) US4823174A (en)
EP (1) EP0197424B1 (en)
JP (1) JP2553510B2 (en)
DE (1) DE3688516T2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4872040A (en) * 1987-04-23 1989-10-03 International Business Machines Corporation Self-aligned heterojunction transistor
US4970578A (en) * 1987-05-01 1990-11-13 Raytheon Company Selective backside plating of GaAs monolithic microwave integrated circuits
US5939738A (en) * 1995-10-25 1999-08-17 Texas Instruments Incorporated Low base-resistance bipolar transistor
JP3086906B1 (en) 1999-05-28 2000-09-11 工業技術院長 Field effect transistor and method of manufacturing the same
KR100332106B1 (en) * 1999-06-29 2002-04-10 박종섭 Method of manufacturing a transistor in a semiconductor device
JP3425603B2 (en) 2000-01-28 2003-07-14 独立行政法人産業技術総合研究所 Method for manufacturing field effect transistor
US7359888B2 (en) * 2003-01-31 2008-04-15 Hewlett-Packard Development Company, L.P. Molecular-junction-nanowire-crossbar-based neural network
US7705625B2 (en) * 2005-07-08 2010-04-27 Zmos Technology, Inc. Source transistor configurations and control methods
US8894504B1 (en) * 2013-01-16 2014-11-25 Stacy Keisler Golf putting training device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1499561A (en) * 1974-01-18 1978-02-01 Univ Connecticut Heterojunction devices
US4380774A (en) * 1980-12-19 1983-04-19 The United States Of America As Represented By The Secretary Of The Navy High-performance bipolar microwave transistor
EP0130774A1 (en) * 1983-06-30 1985-01-09 Fujitsu Limited Process for fabricating bipolar transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611388A (en) * 1983-04-14 1986-09-16 Allied Corporation Method of forming an indium phosphide-boron phosphide heterojunction bipolar transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1499561A (en) * 1974-01-18 1978-02-01 Univ Connecticut Heterojunction devices
US4380774A (en) * 1980-12-19 1983-04-19 The United States Of America As Represented By The Secretary Of The Navy High-performance bipolar microwave transistor
EP0130774A1 (en) * 1983-06-30 1985-01-09 Fujitsu Limited Process for fabricating bipolar transistor

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IEEE ELECTRON DEVICE LETTERS, vol. EDL-3, no. 2, February 1982, pages 43-45, New York, US; W. McLEVIGE et al.: "GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications" *
IEEE ELECTRON DEVICE LETTERS, vol. EDL-5, no. 3, March 1984, pages 99-100, New York, US; C. FONSTAD "Consideration of the relative frequency performance potential of inverted heterojunction n-p-n transistors" *
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 132, no. 6, June 1985, abstract no. 728 S0A, page 220C, Manchester, US; T. ITOH et al.: "Ge/GaAs Heterojunction for bipolar transistors" *

Also Published As

Publication number Publication date
JPS621270A (en) 1987-01-07
DE3688516T2 (en) 1993-10-07
EP0197424A2 (en) 1986-10-15
US4823174A (en) 1989-04-18
DE3688516D1 (en) 1993-07-08
EP0197424B1 (en) 1993-06-02
JP2553510B2 (en) 1996-11-13

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