IL84076A0 - Striped-channel transistor and method of forming the same - Google Patents

Striped-channel transistor and method of forming the same

Info

Publication number
IL84076A0
IL84076A0 IL84076A IL8407687A IL84076A0 IL 84076 A0 IL84076 A0 IL 84076A0 IL 84076 A IL84076 A IL 84076A IL 8407687 A IL8407687 A IL 8407687A IL 84076 A0 IL84076 A0 IL 84076A0
Authority
IL
Israel
Prior art keywords
striped
forming
same
channel transistor
transistor
Prior art date
Application number
IL84076A
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IL84076A0 publication Critical patent/IL84076A0/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1058—Channel region of field-effect devices of field-effect transistors with PN junction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Junction Field-Effect Transistors (AREA)
IL84076A 1986-10-27 1987-10-02 Striped-channel transistor and method of forming the same IL84076A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92355286A 1986-10-27 1986-10-27

Publications (1)

Publication Number Publication Date
IL84076A0 true IL84076A0 (en) 1988-03-31

Family

ID=25448869

Family Applications (1)

Application Number Title Priority Date Filing Date
IL84076A IL84076A0 (en) 1986-10-27 1987-10-02 Striped-channel transistor and method of forming the same

Country Status (4)

Country Link
EP (1) EP0287658A1 (en)
JP (1) JPH01501272A (en)
IL (1) IL84076A0 (en)
WO (1) WO1988003328A1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05114615A (en) * 1991-10-21 1993-05-07 Rohm Co Ltd Compound semiconductor device and manufacture of the same
CA2129327A1 (en) * 1993-08-03 1995-02-04 Nobuo Shiga Field effect transistor
GB2355589B (en) * 1996-01-22 2001-05-30 Fuji Electric Co Ltd Semiconductor device
JP3949193B2 (en) 1996-08-13 2007-07-25 株式会社半導体エネルギー研究所 Insulated gate type semiconductor device
JP4014676B2 (en) 1996-08-13 2007-11-28 株式会社半導体エネルギー研究所 Insulated gate type semiconductor device and manufacturing method thereof
JP3634086B2 (en) 1996-08-13 2005-03-30 株式会社半導体エネルギー研究所 Method for manufacturing insulated gate type semiconductor device
JP4014677B2 (en) * 1996-08-13 2007-11-28 株式会社半導体エネルギー研究所 Insulated gate type semiconductor device
JP4059939B2 (en) * 1996-08-23 2008-03-12 株式会社半導体エネルギー研究所 Power MOS device and manufacturing method thereof
US6703671B1 (en) 1996-08-23 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
JP4103968B2 (en) * 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 Insulated gate type semiconductor device
US6590230B1 (en) 1996-10-15 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6118148A (en) 1996-11-04 2000-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4104701B2 (en) 1997-06-26 2008-06-18 株式会社半導体エネルギー研究所 Semiconductor device
JP3859821B2 (en) 1997-07-04 2006-12-20 株式会社半導体エネルギー研究所 Semiconductor device
JP4017706B2 (en) 1997-07-14 2007-12-05 株式会社半導体エネルギー研究所 Semiconductor device
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JPH11233788A (en) * 1998-02-09 1999-08-27 Semiconductor Energy Lab Co Ltd Semiconductor device
JP4275336B2 (en) 2001-11-16 2009-06-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1306187A (en) * 1960-09-26 1962-10-13 Westinghouse Electric Corp Unipolar transistor
DE2852621C4 (en) * 1978-12-05 1995-11-30 Siemens Ag Insulating layer field-effect transistor with a drift path between the gate electrode and drain zone
EP0167810A1 (en) * 1984-06-08 1986-01-15 Eaton Corporation Power JFET with plural lateral pinching

Also Published As

Publication number Publication date
WO1988003328A1 (en) 1988-05-05
JPH01501272A (en) 1989-04-27
EP0287658A1 (en) 1988-10-26

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