IT1172446B - Dispositivo semiconduttore - Google Patents
Dispositivo semiconduttoreInfo
- Publication number
- IT1172446B IT1172446B IT24175/83A IT2417583A IT1172446B IT 1172446 B IT1172446 B IT 1172446B IT 24175/83 A IT24175/83 A IT 24175/83A IT 2417583 A IT2417583 A IT 2417583A IT 1172446 B IT1172446 B IT 1172446B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductive device
- semiconductive
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8204878A NL8204878A (nl) | 1982-12-17 | 1982-12-17 | Halfgeleiderinrichting. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IT8324175A0 IT8324175A0 (it) | 1983-12-14 |
| IT8324175A1 IT8324175A1 (it) | 1985-06-14 |
| IT1172446B true IT1172446B (it) | 1987-06-18 |
Family
ID=19840761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT24175/83A IT1172446B (it) | 1982-12-17 | 1983-12-14 | Dispositivo semiconduttore |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4642668A (it) |
| JP (1) | JPS59117263A (it) |
| CA (1) | CA1204521A (it) |
| DE (1) | DE3343632C2 (it) |
| FR (1) | FR2538168B1 (it) |
| GB (1) | GB2133619B (it) |
| IT (1) | IT1172446B (it) |
| NL (1) | NL8204878A (it) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1215230B (it) * | 1985-01-08 | 1990-01-31 | Ates Componenti Elettron | Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria |
| DE3802821A1 (de) * | 1988-01-30 | 1989-08-03 | Bosch Gmbh Robert | Leistungstransistor |
| DE3802767A1 (de) * | 1988-01-30 | 1989-08-10 | Bosch Gmbh Robert | Elektronisches geraet |
| EP0560123A3 (en) * | 1992-03-12 | 1994-05-25 | Siemens Ag | Power transistor with multiple finger contacts |
| US6611172B1 (en) * | 2001-06-25 | 2003-08-26 | Sirenza Microdevices, Inc. | Thermally distributed darlington amplifier |
| US6703895B1 (en) * | 2002-09-26 | 2004-03-09 | Motorola, Inc. | Semiconductor component and method of operating same |
| US10403621B2 (en) | 2014-10-29 | 2019-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit layout, layout method and system for implementing the method |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3567506A (en) * | 1968-03-22 | 1971-03-02 | Hughes Aircraft Co | Method for providing a planar transistor with heat-dissipating top base and emitter contacts |
| US3896486A (en) * | 1968-05-06 | 1975-07-22 | Rca Corp | Power transistor having good thermal fatigue capabilities |
| GB1288384A (it) * | 1969-01-31 | 1972-09-06 | ||
| US3667064A (en) * | 1969-05-19 | 1972-05-30 | Massachusetts Inst Technology | Power semiconductor device with negative thermal feedback |
| US3704398A (en) * | 1970-02-14 | 1972-11-28 | Nippon Electric Co | Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures |
| US3995304A (en) * | 1972-01-10 | 1976-11-30 | Teledyne, Inc. | D/A bit switch |
| US3868720A (en) * | 1973-12-17 | 1975-02-25 | Westinghouse Electric Corp | High frequency bipolar transistor with integral thermally compensated degenerative feedback resistance |
| NL7405237A (nl) * | 1974-04-18 | 1975-10-21 | Philips Nv | Parallelschakelen van halfgeleidersystemen. |
| US3952259A (en) * | 1975-04-28 | 1976-04-20 | Rockwell International Corporation | Gain control apparatus |
| NL181612C (nl) * | 1977-05-25 | 1988-03-16 | Philips Nv | Halfgeleiderinrichting. |
| JPS5422784A (en) * | 1977-07-22 | 1979-02-20 | Hitachi Ltd | Semiconductor integrated circuit device for output |
| US4136354A (en) * | 1977-09-15 | 1979-01-23 | National Semiconductor Corporation | Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level |
| US4161740A (en) * | 1977-11-07 | 1979-07-17 | Microwave Semiconductor Corp. | High frequency power transistor having reduced interconnection inductance and thermal resistance |
-
1982
- 1982-12-17 NL NL8204878A patent/NL8204878A/nl not_active Application Discontinuation
-
1983
- 1983-12-02 DE DE3343632A patent/DE3343632C2/de not_active Expired - Lifetime
- 1983-12-13 GB GB08333233A patent/GB2133619B/en not_active Expired
- 1983-12-14 FR FR8320046A patent/FR2538168B1/fr not_active Expired
- 1983-12-14 IT IT24175/83A patent/IT1172446B/it active
- 1983-12-15 CA CA000443371A patent/CA1204521A/en not_active Expired
- 1983-12-16 JP JP58236509A patent/JPS59117263A/ja active Granted
-
1985
- 1985-12-05 US US06/805,579 patent/US4642668A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE3343632C2 (de) | 1993-09-30 |
| FR2538168B1 (fr) | 1988-10-14 |
| IT8324175A0 (it) | 1983-12-14 |
| JPH0420264B2 (it) | 1992-04-02 |
| JPS59117263A (ja) | 1984-07-06 |
| GB2133619B (en) | 1986-08-20 |
| IT8324175A1 (it) | 1985-06-14 |
| FR2538168A1 (fr) | 1984-06-22 |
| DE3343632A1 (de) | 1984-06-20 |
| CA1204521A (en) | 1986-05-13 |
| GB2133619A (en) | 1984-07-25 |
| NL8204878A (nl) | 1984-07-16 |
| US4642668A (en) | 1987-02-10 |
| GB8333233D0 (en) | 1984-01-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NO832619L (no) | Koblingsenhet | |
| IT1194011B (it) | Dispositivo semiconduttore | |
| NO831889L (no) | Forbrennings-varmeanordning | |
| BR8303890A (pt) | Dispositivo anti-refulgor | |
| IT1164353B (it) | Dispositivo semiconduttore | |
| DK471383A (da) | Ultralyd-maaleanordning | |
| NO833640L (no) | Trykkmediumdrevet slaganordning | |
| KR840006461U (ko) | 브러시장치 | |
| IT1139664B (it) | Dispositivo semiconduttore | |
| IT1169440B (it) | Dispositivo bloccastoppino su stiratoi-filatoi | |
| KR840005919A (ko) | 반도체 장치 | |
| IT1161822B (it) | Dispositivo dispergente | |
| ATA138382A (de) | Im-ohr-hoergeraet | |
| DK350783A (da) | Vikleapparat for varebaner | |
| IT1138316B (it) | Dispositivo semiconduttore | |
| IT1172446B (it) | Dispositivo semiconduttore | |
| NO831067L (no) | Laasanordning | |
| IT1139848B (it) | Dispositivo semiconduttore | |
| IT1218346B (it) | Dispositivo di connessione | |
| IT1140550B (it) | Dispositivo semiconduttore | |
| BR8300664A (pt) | Dispositivo vibratorio | |
| IT1178732B (it) | Dispositivo semiconduttore | |
| DK536183D0 (da) | Sigteanordning | |
| SE8205061D0 (sv) | Kassettanordning | |
| AT382950B (de) | Anschlussvorrichtung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19960111 |