IT1178732B - Dispositivo semiconduttore - Google Patents
Dispositivo semiconduttoreInfo
- Publication number
- IT1178732B IT1178732B IT23942/84A IT2394284A IT1178732B IT 1178732 B IT1178732 B IT 1178732B IT 23942/84 A IT23942/84 A IT 23942/84A IT 2394284 A IT2394284 A IT 2394284A IT 1178732 B IT1178732 B IT 1178732B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductive device
- semiconductive
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8304256A NL8304256A (nl) | 1983-12-09 | 1983-12-09 | Halfgeleiderinrichting. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8423942A0 IT8423942A0 (it) | 1984-12-06 |
| IT1178732B true IT1178732B (it) | 1987-09-16 |
Family
ID=19842864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT23942/84A IT1178732B (it) | 1983-12-09 | 1984-12-06 | Dispositivo semiconduttore |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4603402A (it) |
| JP (1) | JPH0673382B2 (it) |
| AU (1) | AU572236B2 (it) |
| CA (1) | CA1228424A (it) |
| DE (1) | DE3443663C2 (it) |
| FR (1) | FR2556488B1 (it) |
| GB (1) | GB2151400B (it) |
| IE (1) | IE56189B1 (it) |
| IT (1) | IT1178732B (it) |
| NL (1) | NL8304256A (it) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63119581A (ja) * | 1986-11-07 | 1988-05-24 | Fujitsu Ltd | 半導体記憶装置 |
| IT1225607B (it) * | 1988-07-06 | 1990-11-22 | Sgs Thomson Microelectronics | Circuito logico cmos per alta tensione |
| KR940008204B1 (ko) * | 1991-08-14 | 1994-09-08 | 삼성전자 주식회사 | 낸드형 플래쉬 메모리의 과도소거 방지장치 및 방법 |
| JP3257813B2 (ja) * | 1992-01-30 | 2002-02-18 | テルモ株式会社 | 光電変換器 |
| US6232630B1 (en) * | 1999-07-07 | 2001-05-15 | Advanced Micro Devices, Inc. | Light floating gate doping to improve tunnel oxide reliability |
| US20070007577A1 (en) * | 2005-07-06 | 2007-01-11 | Matrix Semiconductor, Inc. | Integrated circuit embodying a non-volatile memory cell |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL184552C (nl) * | 1978-07-24 | 1989-08-16 | Philips Nv | Halfgeleiderinrichting voor hoge spanningen. |
| JPS55156370A (en) * | 1979-05-25 | 1980-12-05 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS6014438B2 (ja) * | 1979-08-29 | 1985-04-13 | 株式会社東芝 | 不揮発性半導体メモリ− |
| JPS5644194A (en) * | 1979-09-19 | 1981-04-23 | Toshiba Corp | Memory device |
| JPS5712543A (en) * | 1980-06-27 | 1982-01-22 | Hitachi Ltd | Semiconductor device |
| US4377857A (en) * | 1980-11-18 | 1983-03-22 | Fairchild Camera & Instrument | Electrically erasable programmable read-only memory |
| JPS5864068A (ja) * | 1981-10-14 | 1983-04-16 | Agency Of Ind Science & Technol | 不揮発性半導体メモリの書き込み方法 |
-
1983
- 1983-12-09 NL NL8304256A patent/NL8304256A/nl not_active Application Discontinuation
-
1984
- 1984-11-30 DE DE3443663A patent/DE3443663C2/de not_active Expired - Fee Related
- 1984-12-04 US US06/677,639 patent/US4603402A/en not_active Expired - Lifetime
- 1984-12-05 CA CA000469401A patent/CA1228424A/en not_active Expired
- 1984-12-05 GB GB08430730A patent/GB2151400B/en not_active Expired
- 1984-12-06 IT IT23942/84A patent/IT1178732B/it active
- 1984-12-06 IE IE3126/84A patent/IE56189B1/en not_active IP Right Cessation
- 1984-12-07 AU AU36391/84A patent/AU572236B2/en not_active Ceased
- 1984-12-07 FR FR848418736A patent/FR2556488B1/fr not_active Expired
- 1984-12-10 JP JP26061784A patent/JPH0673382B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| AU572236B2 (en) | 1988-05-05 |
| JPH0673382B2 (ja) | 1994-09-14 |
| FR2556488B1 (fr) | 1989-10-27 |
| GB2151400B (en) | 1987-10-07 |
| IE843126L (en) | 1985-06-09 |
| NL8304256A (nl) | 1985-07-01 |
| CA1228424A (en) | 1987-10-20 |
| IE56189B1 (en) | 1991-05-08 |
| AU3639184A (en) | 1985-06-13 |
| US4603402A (en) | 1986-07-29 |
| DE3443663A1 (de) | 1985-06-13 |
| GB2151400A (en) | 1985-07-17 |
| IT8423942A0 (it) | 1984-12-06 |
| GB8430730D0 (en) | 1985-01-16 |
| FR2556488A1 (fr) | 1985-06-14 |
| JPS60186069A (ja) | 1985-09-21 |
| DE3443663C2 (de) | 1994-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19960111 |