IT8423942A0 - Dispositivo semiconduttore. - Google Patents

Dispositivo semiconduttore.

Info

Publication number
IT8423942A0
IT8423942A0 IT8423942A IT2394284A IT8423942A0 IT 8423942 A0 IT8423942 A0 IT 8423942A0 IT 8423942 A IT8423942 A IT 8423942A IT 2394284 A IT2394284 A IT 2394284A IT 8423942 A0 IT8423942 A0 IT 8423942A0
Authority
IT
Italy
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
IT8423942A
Other languages
English (en)
Other versions
IT1178732B (it
Inventor
Roger Cuppens
Cornelis Dietwin Hartgring
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT8423942A0 publication Critical patent/IT8423942A0/it
Application granted granted Critical
Publication of IT1178732B publication Critical patent/IT1178732B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
IT23942/84A 1983-12-09 1984-12-06 Dispositivo semiconduttore IT1178732B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8304256A NL8304256A (nl) 1983-12-09 1983-12-09 Halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
IT8423942A0 true IT8423942A0 (it) 1984-12-06
IT1178732B IT1178732B (it) 1987-09-16

Family

ID=19842864

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23942/84A IT1178732B (it) 1983-12-09 1984-12-06 Dispositivo semiconduttore

Country Status (10)

Country Link
US (1) US4603402A (it)
JP (1) JPH0673382B2 (it)
AU (1) AU572236B2 (it)
CA (1) CA1228424A (it)
DE (1) DE3443663C2 (it)
FR (1) FR2556488B1 (it)
GB (1) GB2151400B (it)
IE (1) IE56189B1 (it)
IT (1) IT1178732B (it)
NL (1) NL8304256A (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119581A (ja) * 1986-11-07 1988-05-24 Fujitsu Ltd 半導体記憶装置
IT1225607B (it) * 1988-07-06 1990-11-22 Sgs Thomson Microelectronics Circuito logico cmos per alta tensione
KR940008204B1 (ko) * 1991-08-14 1994-09-08 삼성전자 주식회사 낸드형 플래쉬 메모리의 과도소거 방지장치 및 방법
JP3257813B2 (ja) * 1992-01-30 2002-02-18 テルモ株式会社 光電変換器
US6232630B1 (en) * 1999-07-07 2001-05-15 Advanced Micro Devices, Inc. Light floating gate doping to improve tunnel oxide reliability
US20070007577A1 (en) * 2005-07-06 2007-01-11 Matrix Semiconductor, Inc. Integrated circuit embodying a non-volatile memory cell

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184552C (nl) * 1978-07-24 1989-08-16 Philips Nv Halfgeleiderinrichting voor hoge spanningen.
JPS55156370A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Manufacture of semiconductor device
JPS6014438B2 (ja) * 1979-08-29 1985-04-13 株式会社東芝 不揮発性半導体メモリ−
JPS5644194A (en) * 1979-09-19 1981-04-23 Toshiba Corp Memory device
JPS5712543A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Semiconductor device
US4377857A (en) * 1980-11-18 1983-03-22 Fairchild Camera & Instrument Electrically erasable programmable read-only memory
JPS5864068A (ja) * 1981-10-14 1983-04-16 Agency Of Ind Science & Technol 不揮発性半導体メモリの書き込み方法

Also Published As

Publication number Publication date
IT1178732B (it) 1987-09-16
IE843126L (en) 1985-06-09
US4603402A (en) 1986-07-29
JPH0673382B2 (ja) 1994-09-14
CA1228424A (en) 1987-10-20
FR2556488B1 (fr) 1989-10-27
DE3443663A1 (de) 1985-06-13
GB8430730D0 (en) 1985-01-16
GB2151400B (en) 1987-10-07
GB2151400A (en) 1985-07-17
JPS60186069A (ja) 1985-09-21
AU572236B2 (en) 1988-05-05
IE56189B1 (en) 1991-05-08
NL8304256A (nl) 1985-07-01
DE3443663C2 (de) 1994-02-17
FR2556488A1 (fr) 1985-06-14
AU3639184A (en) 1985-06-13

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960111