DE3889354T2 - Halbleiteranordnung. - Google Patents

Halbleiteranordnung.

Info

Publication number
DE3889354T2
DE3889354T2 DE3889354T DE3889354T DE3889354T2 DE 3889354 T2 DE3889354 T2 DE 3889354T2 DE 3889354 T DE3889354 T DE 3889354T DE 3889354 T DE3889354 T DE 3889354T DE 3889354 T2 DE3889354 T2 DE 3889354T2
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3889354T
Other languages
English (en)
Other versions
DE3889354D1 (de
Inventor
Richard A Blanchard
Adrian I Cogan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of DE3889354D1 publication Critical patent/DE3889354D1/de
Application granted granted Critical
Publication of DE3889354T2 publication Critical patent/DE3889354T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
DE3889354T 1987-02-17 1988-02-12 Halbleiteranordnung. Expired - Fee Related DE3889354T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/014,961 US4799100A (en) 1987-02-17 1987-02-17 Method and apparatus for increasing breakdown of a planar junction

Publications (2)

Publication Number Publication Date
DE3889354D1 DE3889354D1 (de) 1994-06-09
DE3889354T2 true DE3889354T2 (de) 1994-11-17

Family

ID=21768795

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3889354T Expired - Fee Related DE3889354T2 (de) 1987-02-17 1988-02-12 Halbleiteranordnung.

Country Status (4)

Country Link
US (1) US4799100A (de)
EP (1) EP0279605B1 (de)
JP (1) JPS63204759A (de)
DE (1) DE3889354T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE37477E1 (en) * 1987-11-06 2001-12-18 Sgs-Thomson Microelectronics, Inc. Integrated circuit protected against electrostatic discharges, with variable protection threshold
JPH0817229B2 (ja) * 1988-03-31 1996-02-21 サンケン電気株式会社 半導体装置
DE58907758D1 (de) * 1988-09-20 1994-07-07 Siemens Ag Planarer pn-Übergang hoher Spannungsfestigkeit.
US5479046A (en) * 1990-06-28 1995-12-26 Robert Bosch Gmbh Monolithically integrated semiconductor arrangement with a cover electrode
EP0519741B1 (de) * 1991-06-21 1997-05-02 Kabushiki Kaisha Toshiba Halbleiteranordnung mit hoher Durchbruchsspannung
US5321283A (en) * 1991-07-30 1994-06-14 Microwave Technology, Inc. High frequency JFET
US6331794B1 (en) 1999-03-10 2001-12-18 Richard A. Blanchard Phase leg with depletion-mode device
US6538279B1 (en) 1999-03-10 2003-03-25 Richard A. Blanchard High-side switch with depletion-mode device
US7535056B2 (en) 2004-03-11 2009-05-19 Yokogawa Electric Corporation Semiconductor device having a low concentration layer formed outside a drift layer
JP2006351587A (ja) * 2005-06-13 2006-12-28 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US7525122B2 (en) * 2005-06-29 2009-04-28 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7855401B2 (en) * 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7598576B2 (en) * 2005-06-29 2009-10-06 Cree, Inc. Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
US8198650B2 (en) * 2008-12-08 2012-06-12 General Electric Company Semiconductor devices and systems
US9812338B2 (en) 2013-03-14 2017-11-07 Cree, Inc. Encapsulation of advanced devices using novel PECVD and ALD schemes
US8994073B2 (en) 2012-10-04 2015-03-31 Cree, Inc. Hydrogen mitigation schemes in the passivation of advanced devices
US9991399B2 (en) 2012-10-04 2018-06-05 Cree, Inc. Passivation structure for semiconductor devices
US9413348B2 (en) 2014-07-29 2016-08-09 Semiconductor Components Industries, Llc Electronic circuit including a switch having an associated breakdown voltage and a method of using the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3796932A (en) * 1971-06-28 1974-03-12 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3983574A (en) * 1973-06-01 1976-09-28 Raytheon Company Semiconductor devices having surface state control
IT1012166B (it) * 1973-06-08 1977-03-10 Rca Corp Dispositivo semiconduttore
JPS5040636A (de) * 1973-08-01 1975-04-14
US4090213A (en) * 1976-06-15 1978-05-16 California Institute Of Technology Induced junction solar cell and method of fabrication
US4481527A (en) * 1981-05-21 1984-11-06 Mcdonnell Douglas Corporation High density MNOS transistor with ion implant into nitride layer adjacent gate electrode
JPS5891641A (ja) * 1981-11-26 1983-05-31 Toshiba Corp 高耐圧半導体装置
JPS58111322A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd 半導体装置
US4551353A (en) * 1981-12-30 1985-11-05 Unitrode Corporation Method for reducing leakage currents in semiconductor devices
US4544416A (en) * 1983-08-26 1985-10-01 Texas Instruments Incorporated Passivation of silicon oxide during photoresist burnoff
US4827324A (en) * 1986-11-06 1989-05-02 Siliconix Incorporated Implantation of ions into an insulating layer to increase planar pn junction breakdown voltage

Also Published As

Publication number Publication date
EP0279605B1 (de) 1994-05-04
EP0279605A2 (de) 1988-08-24
JPS63204759A (ja) 1988-08-24
EP0279605A3 (en) 1989-06-07
DE3889354D1 (de) 1994-06-09
US4799100A (en) 1989-01-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee