NL187416C - Stralingsgevoelige halfgeleiderinrichting. - Google Patents

Stralingsgevoelige halfgeleiderinrichting.

Info

Publication number
NL187416C
NL187416C NLAANVRAGE8302516,A NL8302516A NL187416C NL 187416 C NL187416 C NL 187416C NL 8302516 A NL8302516 A NL 8302516A NL 187416 C NL187416 C NL 187416C
Authority
NL
Netherlands
Prior art keywords
radiation
semiconductor device
sensitive semiconductor
sensitive
semiconductor
Prior art date
Application number
NLAANVRAGE8302516,A
Other languages
English (en)
Other versions
NL8302516A (nl
NL187416B (nl
Inventor
Drs Arthur Marie E Hoeberechts
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE8302516,A priority Critical patent/NL187416C/nl
Priority to US06/627,309 priority patent/US4652899A/en
Priority to FR8410787A priority patent/FR2549295B1/fr
Priority to DE3425309A priority patent/DE3425309C2/de
Priority to SE8403661A priority patent/SE460002B/sv
Priority to GB08417670A priority patent/GB2143373B/en
Priority to JP14248184A priority patent/JPS6126539A/ja
Priority to ES534204A priority patent/ES534204A0/es
Priority to JP59142479A priority patent/JPS6057677A/ja
Priority to IT21834/84A priority patent/IT1176383B/it
Priority to SE8403661D priority patent/SE8403661L/xx
Priority to CA000458633A priority patent/CA1243103A/en
Priority to AT2254/84A priority patent/AT392704B/de
Priority to AU30574/84A priority patent/AU3057484A/en
Publication of NL8302516A publication Critical patent/NL8302516A/nl
Publication of NL187416B publication Critical patent/NL187416B/nl
Application granted granted Critical
Publication of NL187416C publication Critical patent/NL187416C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Curing Cements, Concrete, And Artificial Stone (AREA)
NLAANVRAGE8302516,A 1983-07-14 1983-07-14 Stralingsgevoelige halfgeleiderinrichting. NL187416C (nl)

Priority Applications (14)

Application Number Priority Date Filing Date Title
NLAANVRAGE8302516,A NL187416C (nl) 1983-07-14 1983-07-14 Stralingsgevoelige halfgeleiderinrichting.
US06/627,309 US4652899A (en) 1983-07-14 1984-07-02 Radiation-sensitive semiconductor device having reduced capacitance
FR8410787A FR2549295B1 (fr) 1983-07-14 1984-07-06 Dispositif semi-conducteur sensible au rayonnement
DE3425309A DE3425309C2 (de) 1983-07-14 1984-07-10 Strahlungsempfindliche Halbleiteranordnung
CA000458633A CA1243103A (en) 1983-07-14 1984-07-11 Radiation-sensitive semiconductor device
JP14248184A JPS6126539A (ja) 1983-07-14 1984-07-11 ジシクロペンタジエン誘導体を基材とする固定化遅延剤を含有するセメント組成物
SE8403661A SE460002B (sv) 1983-07-14 1984-07-11 Straalningskaensliga halvledaranordningar innefattande delzoner vilka minskar i bredd eller skikttjocklek, sett i riktningen fraan ett gemensamt anslutningsomraade
JP59142479A JPS6057677A (ja) 1983-07-14 1984-07-11 放射感応半導体装置
IT21834/84A IT1176383B (it) 1983-07-14 1984-07-11 Dispositivo semiconduttore sensibile a radiazioni
SE8403661D SE8403661L (sv) 1983-07-14 1984-07-11 Stralningskenslig halvledaranordning
GB08417670A GB2143373B (en) 1983-07-14 1984-07-11 Radiation-sensitive diode
ES534204A ES534204A0 (es) 1983-07-14 1984-07-11 Un dispositivo semiconductor sensible a la radiacion
AT2254/84A AT392704B (de) 1983-07-14 1984-07-12 Strahlungsempfindliche halbleiteranordnung
AU30574/84A AU3057484A (en) 1983-07-14 1984-07-13 Radiation-sensitive semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NLAANVRAGE8302516,A NL187416C (nl) 1983-07-14 1983-07-14 Stralingsgevoelige halfgeleiderinrichting.
NL8302516 1983-07-14

Publications (3)

Publication Number Publication Date
NL8302516A NL8302516A (nl) 1985-02-01
NL187416B NL187416B (nl) 1991-04-16
NL187416C true NL187416C (nl) 1991-09-16

Family

ID=19842158

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8302516,A NL187416C (nl) 1983-07-14 1983-07-14 Stralingsgevoelige halfgeleiderinrichting.

Country Status (12)

Country Link
US (1) US4652899A (nl)
JP (2) JPS6126539A (nl)
AT (1) AT392704B (nl)
AU (1) AU3057484A (nl)
CA (1) CA1243103A (nl)
DE (1) DE3425309C2 (nl)
ES (1) ES534204A0 (nl)
FR (1) FR2549295B1 (nl)
GB (1) GB2143373B (nl)
IT (1) IT1176383B (nl)
NL (1) NL187416C (nl)
SE (2) SE8403661L (nl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2628562A1 (fr) * 1988-03-11 1989-09-15 Thomson Csf Dispositif d'imagerie a structure matricielle
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
JP2711038B2 (ja) * 1991-11-20 1998-02-10 富士通株式会社 光検知装置
EP2287917B1 (en) * 1999-02-25 2016-05-25 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device
JP3467013B2 (ja) 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
US6960817B2 (en) * 2000-04-21 2005-11-01 Canon Kabushiki Kaisha Solid-state imaging device
RU2290721C2 (ru) 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя
RU2416840C2 (ru) * 2006-02-01 2011-04-20 Конинклейке Филипс Электроникс, Н.В. Лавинный фотодиод в режиме счетчика гейгера
CN102460212B (zh) * 2009-06-05 2017-03-22 Rti电子公司 X射线检测装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1072080A (en) * 1965-12-31 1967-06-14 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3501678A (en) * 1967-06-28 1970-03-17 Ortec Tapered-shelf semiconductor
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch
US3994012A (en) * 1975-05-07 1976-11-23 The Regents Of The University Of Minnesota Photovoltaic semi-conductor devices
DE2927126A1 (de) * 1979-07-05 1981-01-08 Standard Elektrik Lorenz Ag Photodiode
US4394676A (en) * 1980-12-17 1983-07-19 Agouridis Dimitrios C Photovoltaic radiation detector element

Also Published As

Publication number Publication date
SE460002B (sv) 1989-08-28
NL8302516A (nl) 1985-02-01
FR2549295A1 (fr) 1985-01-18
CA1243103A (en) 1988-10-11
GB2143373A (en) 1985-02-06
GB8417670D0 (en) 1984-08-15
GB2143373B (en) 1986-11-12
NL187416B (nl) 1991-04-16
AT392704B (de) 1991-05-27
SE8403661L (sv) 1985-01-15
JPS6126539A (ja) 1986-02-05
ES8505144A1 (es) 1985-04-16
US4652899A (en) 1987-03-24
DE3425309A1 (de) 1985-01-24
IT1176383B (it) 1987-08-18
JPH0527997B2 (nl) 1993-04-22
FR2549295B1 (fr) 1987-07-31
ES534204A0 (es) 1985-04-16
IT8421834A1 (it) 1986-01-11
SE8403661D0 (sv) 1984-07-11
DE3425309C2 (de) 1994-02-10
ATA225484A (de) 1990-10-15
IT8421834A0 (it) 1984-07-11
JPS6057677A (ja) 1985-04-03
AU3057484A (en) 1985-01-17

Similar Documents

Publication Publication Date Title
DE3485409D1 (de) Halbleiterschaltvorrichtung.
DE3576433D1 (de) Halbleiterspeichervorrichtung.
DE3382212D1 (de) Halbleiterspeicher.
DE3482935D1 (de) Halbleiterlaservorrichtung.
DE3581773D1 (de) Halbleiterspeichervorrichtung.
DE3584189D1 (de) Halbleiterspeichergeraet.
NO166825C (no) Hoeyspennings-tilkoplingsanordning.
DE3484514D1 (de) Halbleiterspeichergeraet.
DE3483769D1 (de) Halbleiterdiode.
DE3484232D1 (de) Halbleiterspeichervorrichtung.
DE3584799D1 (de) Halbleitervorrichtung.
NL186665C (nl) Halfgeleiderinrichting.
DE3473973D1 (de) Masterslice semiconductor device
DE3581370D1 (de) Halbleitervorrichtung.
DE3477312D1 (de) Masterslice semiconductor device
AT387106B (de) Strahlungsempfindliche halbleiteranordnung
DE3587052D1 (de) Halbleiterspeichergeraet.
IT8322373A0 (it) Dispositivo semiconduttore.
NL188125C (nl) Halfgeleiderfotodiode.
NL189271C (nl) Halfgeleiderinrichting.
DE3586568D1 (de) Halbleitereinrichtung.
DE3587457D1 (de) Halbleiterspeichereinrichtung.
DE3484817D1 (de) Halbleiteranordnung.
IT8219677A0 (it) Dispositivo a semiconduttori.
NL187416C (nl) Stralingsgevoelige halfgeleiderinrichting.

Legal Events

Date Code Title Description
A1B A search report has been drawn up
BC A request for examination has been filed
TNT Modifications of names of proprietors of patents or applicants of examined patent applications

Owner name: PHILIPS ELECTRONICS N.V.

V1 Lapsed because of non-payment of the annual fee

Effective date: 19990201