ATA225484A - Strahlungsempfindliche halbleiteranordnung - Google Patents

Strahlungsempfindliche halbleiteranordnung

Info

Publication number
ATA225484A
ATA225484A AT0225484A AT225484A ATA225484A AT A225484 A ATA225484 A AT A225484A AT 0225484 A AT0225484 A AT 0225484A AT 225484 A AT225484 A AT 225484A AT A225484 A ATA225484 A AT A225484A
Authority
AT
Austria
Prior art keywords
radiation
semiconductor arrangement
sensitive semiconductor
sensitive
arrangement
Prior art date
Application number
AT0225484A
Other languages
English (en)
Other versions
AT392704B (de
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of ATA225484A publication Critical patent/ATA225484A/de
Application granted granted Critical
Publication of AT392704B publication Critical patent/AT392704B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
AT2254/84A 1983-07-14 1984-07-12 Strahlungsempfindliche halbleiteranordnung AT392704B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE8302516,A NL187416C (nl) 1983-07-14 1983-07-14 Stralingsgevoelige halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
ATA225484A true ATA225484A (de) 1990-10-15
AT392704B AT392704B (de) 1991-05-27

Family

ID=19842158

Family Applications (1)

Application Number Title Priority Date Filing Date
AT2254/84A AT392704B (de) 1983-07-14 1984-07-12 Strahlungsempfindliche halbleiteranordnung

Country Status (12)

Country Link
US (1) US4652899A (de)
JP (2) JPS6057677A (de)
AT (1) AT392704B (de)
AU (1) AU3057484A (de)
CA (1) CA1243103A (de)
DE (1) DE3425309C2 (de)
ES (1) ES8505144A1 (de)
FR (1) FR2549295B1 (de)
GB (1) GB2143373B (de)
IT (1) IT1176383B (de)
NL (1) NL187416C (de)
SE (2) SE8403661L (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2628562A1 (fr) * 1988-03-11 1989-09-15 Thomson Csf Dispositif d'imagerie a structure matricielle
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
JP2711038B2 (ja) * 1991-11-20 1998-02-10 富士通株式会社 光検知装置
TW484235B (en) * 1999-02-25 2002-04-21 Canon Kk Light-receiving element and photoelectric conversion device
JP3467013B2 (ja) * 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
US6960817B2 (en) * 2000-04-21 2005-11-01 Canon Kabushiki Kaisha Solid-state imaging device
RU2290721C2 (ru) 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя
RU2416840C2 (ru) 2006-02-01 2011-04-20 Конинклейке Филипс Электроникс, Н.В. Лавинный фотодиод в режиме счетчика гейгера
CN102460212B (zh) * 2009-06-05 2017-03-22 Rti电子公司 X射线检测装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1072080A (en) * 1965-12-31 1967-06-14 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3501678A (en) * 1967-06-28 1970-03-17 Ortec Tapered-shelf semiconductor
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch
US3994012A (en) * 1975-05-07 1976-11-23 The Regents Of The University Of Minnesota Photovoltaic semi-conductor devices
DE2927126A1 (de) * 1979-07-05 1981-01-08 Standard Elektrik Lorenz Ag Photodiode
US4394676A (en) * 1980-12-17 1983-07-19 Agouridis Dimitrios C Photovoltaic radiation detector element

Also Published As

Publication number Publication date
IT8421834A0 (it) 1984-07-11
FR2549295A1 (fr) 1985-01-18
NL8302516A (nl) 1985-02-01
IT8421834A1 (it) 1986-01-11
SE8403661L (sv) 1985-01-15
ES534204A0 (es) 1985-04-16
JPH0527997B2 (de) 1993-04-22
JPS6057677A (ja) 1985-04-03
GB8417670D0 (en) 1984-08-15
GB2143373A (en) 1985-02-06
DE3425309C2 (de) 1994-02-10
GB2143373B (en) 1986-11-12
ES8505144A1 (es) 1985-04-16
SE8403661D0 (sv) 1984-07-11
AU3057484A (en) 1985-01-17
US4652899A (en) 1987-03-24
SE460002B (sv) 1989-08-28
CA1243103A (en) 1988-10-11
NL187416C (nl) 1991-09-16
NL187416B (nl) 1991-04-16
IT1176383B (it) 1987-08-18
JPS6126539A (ja) 1986-02-05
AT392704B (de) 1991-05-27
FR2549295B1 (fr) 1987-07-31
DE3425309A1 (de) 1985-01-24

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee