GB1072080A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB1072080A
GB1072080A GB55348/65A GB5534865A GB1072080A GB 1072080 A GB1072080 A GB 1072080A GB 55348/65 A GB55348/65 A GB 55348/65A GB 5534865 A GB5534865 A GB 5534865A GB 1072080 A GB1072080 A GB 1072080A
Authority
GB
United Kingdom
Prior art keywords
layer
devices
photo
junction
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB55348/65A
Inventor
Zenon Jan Kurpisz
Gerald James Connor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB55348/65A priority Critical patent/GB1072080A/en
Priority to DE19661539885 priority patent/DE1539885A1/en
Publication of GB1072080A publication Critical patent/GB1072080A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,072,080. Photo-sensitive devices. STANDARD TELEPHONES & CABLES Ltd. Dec. 31, 1965, No. 55348/65. Heading H1K. A photo-sensitive device including at least two layers of semi-conductive material and having ohmic contacts on each outer semiconductor material layer has a first layer adjacent a second layer of opposite conductivity and low resistivity and a hole in the first layer which does not touch or penetrate the junction, the device being outwardly tapering in the direction of transition from the first to the second layer. An N+-type layer 2 is diffused or epitaxially deposited on a P-type Si body 1 and a P<SP>+</SP>-type layer 3 similarly added thereto. Ohmic contacts 4 are provided by electroless nickel plating. A series of holes are chemically etched into the surface of the body to give a block of the devices as shown and then the individual devices cut from the block. The shaping may be done by air abrasion. The thin portion XY, 0.001 inch above the PN junction, allows variations in incident radiation to be detected quickly. The thickness of the various layers together with the doping concentrations are given. A twolayer device may also be constructed.
GB55348/65A 1965-12-31 1965-12-31 Improvements in or relating to semiconductor devices Expired GB1072080A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB55348/65A GB1072080A (en) 1965-12-31 1965-12-31 Improvements in or relating to semiconductor devices
DE19661539885 DE1539885A1 (en) 1965-12-31 1966-12-17 Photosensitive semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB55348/65A GB1072080A (en) 1965-12-31 1965-12-31 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB1072080A true GB1072080A (en) 1967-06-14

Family

ID=10473660

Family Applications (1)

Application Number Title Priority Date Filing Date
GB55348/65A Expired GB1072080A (en) 1965-12-31 1965-12-31 Improvements in or relating to semiconductor devices

Country Status (2)

Country Link
DE (1) DE1539885A1 (en)
GB (1) GB1072080A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2284989A1 (en) * 1974-09-13 1976-04-09 Comp Generale Electricite Low supply voltage photodiode - has P doped disc on thin centre of silicon chip with rear N doped layer
GB2143373A (en) * 1983-07-14 1985-02-06 Philips Nv Radiation-sensitive diode
AT393009B (en) * 1989-11-07 1991-07-25 Poska Albertas Ionas Antanovic AUTOMATIC VALVE

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2034518B (en) * 1978-10-18 1983-06-29 Westinghouse Electric Corp Light activated p-i-n switch

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2284989A1 (en) * 1974-09-13 1976-04-09 Comp Generale Electricite Low supply voltage photodiode - has P doped disc on thin centre of silicon chip with rear N doped layer
GB2143373A (en) * 1983-07-14 1985-02-06 Philips Nv Radiation-sensitive diode
AT393009B (en) * 1989-11-07 1991-07-25 Poska Albertas Ionas Antanovic AUTOMATIC VALVE

Also Published As

Publication number Publication date
DE1539885A1 (en) 1970-06-04

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