GB1071574A - A semiconductor device having three or more layers with alternate types of conductivity - Google Patents

A semiconductor device having three or more layers with alternate types of conductivity

Info

Publication number
GB1071574A
GB1071574A GB22373/64A GB2237364A GB1071574A GB 1071574 A GB1071574 A GB 1071574A GB 22373/64 A GB22373/64 A GB 22373/64A GB 2237364 A GB2237364 A GB 2237364A GB 1071574 A GB1071574 A GB 1071574A
Authority
GB
United Kingdom
Prior art keywords
layers
junctions
semi
pnp
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB22373/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB1071574A publication Critical patent/GB1071574A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,071,574. Semi-conductor devices. LICENTIA PATENT-VERWALTUNGS-G.m.b.H. May 29, 1964 [June 1, 1963; Sept. 24, 1963], No. 22373/64. Heading H1K. In a semi-conductor device comprising three or more layers of alternate conductivity types, the surface where the PN junctions emerge forms an angle of less than 90 degrees with the junction in the direction of the higher resistivity material. Fig. 4 shows an N-type silicon wafer with an outer P-type diffused layer which is cut through at lines 13 to expose PN junctions which meet the surface with the required angular conditions; this has the effect of reducing the electric field along the surface under reverse biasing conditions. A similar effect is produced in a PNP body as shown in Fig. 5 by cutting a trough through line 23 and the same arrangement may be used in a PNP wafer with a projecting edge portion (Fig. 7 not shown).
GB22373/64A 1963-06-01 1964-05-29 A semiconductor device having three or more layers with alternate types of conductivity Expired GB1071574A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE1963L0045011 DE1251440C2 (en) 1963-06-01 1963-06-01 SEMICONDUCTOR COMPONENT
DEL0045944 1963-09-24

Publications (1)

Publication Number Publication Date
GB1071574A true GB1071574A (en) 1967-06-07

Family

ID=25985679

Family Applications (1)

Application Number Title Priority Date Filing Date
GB22373/64A Expired GB1071574A (en) 1963-06-01 1964-05-29 A semiconductor device having three or more layers with alternate types of conductivity

Country Status (4)

Country Link
CH (1) CH430883A (en)
DE (2) DE1251440C2 (en)
FR (1) FR1396895A (en)
GB (1) GB1071574A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040084A (en) * 1974-09-18 1977-08-02 Hitachi, Ltd. Semiconductor device having high blocking voltage with peripheral circular groove

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3559006A (en) * 1968-04-11 1971-01-26 Tokyo Shibaura Electric Co Semiconductor device with an inclined inwardly extending groove
CH533362A (en) * 1971-06-25 1973-01-31 Bbc Brown Boveri & Cie Semiconductor component

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040084A (en) * 1974-09-18 1977-08-02 Hitachi, Ltd. Semiconductor device having high blocking voltage with peripheral circular groove

Also Published As

Publication number Publication date
FR1396895A (en) 1965-04-23
DE1251440B (en)
DE1464243A1 (en) 1968-12-05
DE1251440C2 (en) 1980-04-03
CH430883A (en) 1967-02-28

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